260 related articles for article (PubMed ID: 27846499)
1. MoS2 transistors with 1-nanometer gate lengths.
Desai SB; Madhvapathy SR; Sachid AB; Llinas JP; Wang Q; Ahn GH; Pitner G; Kim MJ; Bokor J; Hu C; Wong HP; Javey A
Science; 2016 Oct; 354(6308):99-102. PubMed ID: 27846499
[TBL] [Abstract][Full Text] [Related]
2. Sub-10 nm Monolayer MoS
Xiao X; Chen M; Zhang J; Zhang T; Zhang L; Jin Y; Wang J; Jiang K; Fan S; Li Q
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11612-11617. PubMed ID: 30838844
[TBL] [Abstract][Full Text] [Related]
3. Vertical MoS
Wu F; Tian H; Shen Y; Hou Z; Ren J; Gou G; Sun Y; Yang Y; Ren TL
Nature; 2022 Mar; 603(7900):259-264. PubMed ID: 35264756
[TBL] [Abstract][Full Text] [Related]
4. Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.
Zhu Y; Li Y; Arefe G; Burke RA; Tan C; Hao Y; Liu X; Liu X; Yoo WJ; Dubey M; Lin Q; Hone JC
Nano Lett; 2018 Jun; 18(6):3807-3813. PubMed ID: 29768000
[TBL] [Abstract][Full Text] [Related]
5. Scaling of MoS
Tian J; Wang Q; Huang X; Tang J; Chu Y; Wang S; Shen C; Zhao Y; Li N; Liu J; Ji Y; Huang B; Peng Y; Yang R; Yang W; Watanabe K; Taniguchi T; Bai X; Shi D; Du L; Zhang G
Nano Lett; 2023 Apr; 23(7):2764-2770. PubMed ID: 37010357
[TBL] [Abstract][Full Text] [Related]
6. MoS
Nourbakhsh A; Zubair A; Sajjad RN; Tavakkoli K G A; Chen W; Fang S; Ling X; Kong J; Dresselhaus MS; Kaxiras E; Berggren KK; Antoniadis D; Palacios T
Nano Lett; 2016 Dec; 16(12):7798-7806. PubMed ID: 27960446
[TBL] [Abstract][Full Text] [Related]
7. Near-ideal subthreshold swing MoS
Pan Y; Jia K; Huang K; Wu Z; Bai G; Yu J; Zhang Z; Zhang Q; Yin H
Nanotechnology; 2019 Mar; 30(9):095202. PubMed ID: 30561381
[TBL] [Abstract][Full Text] [Related]
8. Scaling carbon nanotube complementary transistors to 5-nm gate lengths.
Qiu C; Zhang Z; Xiao M; Yang Y; Zhong D; Peng LM
Science; 2017 Jan; 355(6322):271-276. PubMed ID: 28104886
[TBL] [Abstract][Full Text] [Related]
9. A subthermionic tunnel field-effect transistor with an atomically thin channel.
Sarkar D; Xie X; Liu W; Cao W; Kang J; Gong Y; Kraemer S; Ajayan PM; Banerjee K
Nature; 2015 Oct; 526(7571):91-5. PubMed ID: 26432247
[TBL] [Abstract][Full Text] [Related]
10. Subthreshold swing improvement in MoS
Nourbakhsh A; Zubair A; Joglekar S; Dresselhaus M; Palacios T
Nanoscale; 2017 May; 9(18):6122-6127. PubMed ID: 28447680
[TBL] [Abstract][Full Text] [Related]
11. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.
Miao J; Zhang S; Cai L; Scherr M; Wang C
ACS Nano; 2015 Sep; 9(9):9236-43. PubMed ID: 26277886
[TBL] [Abstract][Full Text] [Related]
12. Channel length scaling of MoS2 MOSFETs.
Liu H; Neal AT; Ye PD
ACS Nano; 2012 Oct; 6(10):8563-9. PubMed ID: 22957650
[TBL] [Abstract][Full Text] [Related]
13. Short channel monolayer MoS
Bi K; Liu H; Chen Y; Luo F; Shu Z; Lin J; Liu S; Liu H; Zeng Z; Dai P; Zhu M; Duan H
Nanotechnology; 2019 Jul; 30(29):295301. PubMed ID: 30917350
[TBL] [Abstract][Full Text] [Related]
14. Few-Layered MoS
Zou X; Liu L; Xu J; Wang H; Tang WM
ACS Appl Mater Interfaces; 2020 Jul; 12(29):32943-32950. PubMed ID: 32610894
[TBL] [Abstract][Full Text] [Related]
15. Thick Layered Semiconductor Devices with Water Top-Gates: High On-Off Ratio Field-Effect Transistors and Aqueous Sensors.
Huang Y; Sutter E; Wu LM; Xu H; Bao L; Gao HJ; Zhou XJ; Sutter P
ACS Appl Mater Interfaces; 2018 Jul; 10(27):23198-23207. PubMed ID: 29926723
[TBL] [Abstract][Full Text] [Related]
16. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
Liu H; Si M; Deng Y; Neal AT; Du Y; Najmaei S; Ajayan PM; Lou J; Ye PD
ACS Nano; 2014 Jan; 8(1):1031-8. PubMed ID: 24351134
[TBL] [Abstract][Full Text] [Related]
17. Highly reliable carbon nanotube transistors with patterned gates and molecular gate dielectric.
Weitz RT; Zschieschang U; Forment-Aliaga A; Kälblein D; Burghard M; Kern K; Klauk H
Nano Lett; 2009 Apr; 9(4):1335-40. PubMed ID: 19351189
[TBL] [Abstract][Full Text] [Related]
18. Effects of HfO
Xu J; Wen M; Zhao X; Liu L; Song X; Lai PT; Tang WM
Nanotechnology; 2018 Aug; 29(34):345201. PubMed ID: 29808825
[TBL] [Abstract][Full Text] [Related]
19. Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors.
Xu K; Chen D; Yang F; Wang Z; Yin L; Wang F; Cheng R; Liu K; Xiong J; Liu Q; He J
Nano Lett; 2017 Feb; 17(2):1065-1070. PubMed ID: 28092953
[TBL] [Abstract][Full Text] [Related]
20. Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.
Liu Y; Guo J; Wu Y; Zhu E; Weiss NO; He Q; Wu H; Cheng HC; Xu Y; Shakir I; Huang Y; Duan X
Nano Lett; 2016 Oct; 16(10):6337-6342. PubMed ID: 27579678
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
