541 related articles for article (PubMed ID: 27869222)
41. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
[TBL] [Abstract][Full Text] [Related]
42. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E; Giannazzo F; Di Franco S; Greco G; Fiorenza P; Roccaforte F; Prystawko P; Kruszewski P; Leszczynski M; Cora I; Pécz B; Fogarassy Z; Lo Nigro R
Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947665
[TBL] [Abstract][Full Text] [Related]
43. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.
Wojtasiak W; Góralczyk M; Gryglewski D; Zając M; Kucharski R; Prystawko P; Piotrowska A; Ekielski M; Kamińska E; Taube A; Wzorek M
Micromachines (Basel); 2018 Oct; 9(11):. PubMed ID: 30715045
[TBL] [Abstract][Full Text] [Related]
44. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
[TBL] [Abstract][Full Text] [Related]
45. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
[TBL] [Abstract][Full Text] [Related]
46. Nanoporous GaN on
Lee KJ; Nakazato Y; Chun J; Wen X; Meng C; Soman R; Noshin M; Chowdhury S
Nanotechnology; 2022 Oct; 33(50):. PubMed ID: 36103775
[TBL] [Abstract][Full Text] [Related]
47. GaN Heterostructures as Innovative X-ray Imaging Sensors-Change of Paradigm.
Thalhammer S; Hörner A; Küß M; Eberle S; Pantle F; Wixforth A; Nagel W
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208272
[TBL] [Abstract][Full Text] [Related]
48. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.
Sakharov AV; Arteev DS; Zavarin EE; Nikolaev AE; Lundin WV; Prasolov ND; Yagovkina MA; Tsatsulnikov AF; Fedotov SD; Sokolov EM; Statsenko VN
Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374449
[TBL] [Abstract][Full Text] [Related]
49. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
Liu AC; Huang YW; Chen HC; Kuo HC
Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675328
[TBL] [Abstract][Full Text] [Related]
50. Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.
Greco G; Fiorenza P; Iucolano F; Severino A; Giannazzo F; Roccaforte F
ACS Appl Mater Interfaces; 2017 Oct; 9(40):35383-35390. PubMed ID: 28920438
[TBL] [Abstract][Full Text] [Related]
51. High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT.
Dai JJ; Mai TT; Wu SK; Peng JR; Liu CW; Wen HC; Chou WC; Ho HC; Wang WF
Nanomaterials (Basel); 2021 Jul; 11(7):. PubMed ID: 34361152
[TBL] [Abstract][Full Text] [Related]
52. Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes.
Fang Y; Chen L; Liu Y; Wang H
Micromachines (Basel); 2022 May; 13(6):. PubMed ID: 35744445
[TBL] [Abstract][Full Text] [Related]
53. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
[TBL] [Abstract][Full Text] [Related]
54. Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors.
Wang H; You H; Yang J; Yang M; Wang L; Zhao H; Xie Z; Chen D
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557510
[TBL] [Abstract][Full Text] [Related]
55. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
56. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.
Xu P; Jiang Y; Chen Y; Ma Z; Wang X; Deng Z; Li Y; Jia H; Wang W; Chen H
Nanoscale Res Lett; 2012 Feb; 7(1):141. PubMed ID: 22348545
[TBL] [Abstract][Full Text] [Related]
57. Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform.
Lyu Q; Jiang H; Lau KM
Opt Express; 2021 Mar; 29(6):8358-8364. PubMed ID: 33820283
[TBL] [Abstract][Full Text] [Related]
58. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.
Liao SY; Lu CC; Chang T; Huang CF; Cheng CH; Chang LB
J Nanosci Nanotechnol; 2014 Aug; 14(8):6243-6. PubMed ID: 25936096
[TBL] [Abstract][Full Text] [Related]
59. Dual-channel design to suppress buffer induced current degradation in AlGaN/GaN heterostructures on Si.
Hu A; He X; Guo X
Nanotechnology; 2020 Mar; 31(11):115202. PubMed ID: 31766039
[TBL] [Abstract][Full Text] [Related]
60. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.
Heilmann M; Munshi AM; Sarau G; Göbelt M; Tessarek C; Fauske VT; van Helvoort AT; Yang J; Latzel M; Hoffmann B; Conibeer G; Weman H; Christiansen S
Nano Lett; 2016 Jun; 16(6):3524-32. PubMed ID: 27124605
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
