125 related articles for article (PubMed ID: 27877565)
1. Determination of the surface band bending in In
Lozac'h M; Ueda S; Liu S; Yoshikawa H; Liwen S; Wang X; Shen B; Sakoda K; Kobayashi K; Sumiya M
Sci Technol Adv Mater; 2013 Feb; 14(1):015007. PubMed ID: 27877565
[TBL] [Abstract][Full Text] [Related]
2. Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy.
Zhao Y; Gao H; Huang R; Huang Z; Li F; Feng J; Sun Q; Dingsun A; Yang H
Sci Rep; 2019 Nov; 9(1):16969. PubMed ID: 31740691
[TBL] [Abstract][Full Text] [Related]
3. Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.
Speckbacher M; Treu J; Whittles TJ; Linhart WM; Xu X; Saller K; Dhanak VR; Abstreiter G; Finley JJ; Veal TD; Koblmüller G
Nano Lett; 2016 Aug; 16(8):5135-42. PubMed ID: 27458736
[TBL] [Abstract][Full Text] [Related]
4. Valence transition of YbInCu4 observed in hard X-ray photoemission spectra.
Sato H; Shimada K; Arita M; Hiraoka K; Kojima K; Takeda Y; Yoshikawa K; Sawada M; Nakatake M; Namatame H; Taniguchi M; Takata Y; Ikenaga E; Shin S; Kobayashi K; Tamasaku K; Nishino Y; Miwa D; Yabashi M; Ishikawa T
Phys Rev Lett; 2004 Dec; 93(24):246404. PubMed ID: 15697838
[TBL] [Abstract][Full Text] [Related]
5. Pronounced Surface Band Bending of Thin-Film Silicon Revealed by Modeling Core Levels Probed with Hard X-rays.
Wippler D; Wilks RG; Pieters BE; van Albada SJ; Gerlach D; Hüpkes J; Bär M; Rau U
ACS Appl Mater Interfaces; 2016 Jul; 8(27):17685-93. PubMed ID: 27294978
[TBL] [Abstract][Full Text] [Related]
6. Revisiting the Valence and Conduction Band Size Dependence of PbS Quantum Dot Thin Films.
Miller EM; Kroupa DM; Zhang J; Schulz P; Marshall AR; Kahn A; Lany S; Luther JM; Beard MC; Perkins CL; van de Lagemaat J
ACS Nano; 2016 Mar; 10(3):3302-11. PubMed ID: 26895310
[TBL] [Abstract][Full Text] [Related]
7. Revisiting the Determination of the Valence Band Maximum and Defect Formation in Halide Perovskites for Solar Cells: Insights from Highly Sensitive Near-UV Photoemission Spectroscopy.
Menzel D; Tejada A; Al-Ashouri A; Levine I; Guerra JA; Rech B; Albrecht S; Korte L
ACS Appl Mater Interfaces; 2021 Sep; 13(36):43540-43553. PubMed ID: 34472345
[TBL] [Abstract][Full Text] [Related]
8. Intrinsic electron accumulation at clean InN surfaces.
Mahboob I; Veal TD; McConville CF; Lu H; Schaff WJ
Phys Rev Lett; 2004 Jan; 92(3):036804. PubMed ID: 14753893
[TBL] [Abstract][Full Text] [Related]
9. Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells.
Lee CS; Larina L; Shin YM; Al-Ammar EA; Ahn BT
Phys Chem Chem Phys; 2012 Apr; 14(14):4789-95. PubMed ID: 22382807
[TBL] [Abstract][Full Text] [Related]
10. High resolution photoemission and x-ray absorption spectroscopy of a lepidocrocite-like TiO2 nanosheet on Pt(110) (1 × 2).
Walle LE; Agnoli S; Svenum IH; Borg A; Artiglia L; Krüger P; Sandell A; Granozzi G
J Chem Phys; 2011 Aug; 135(5):054706. PubMed ID: 21823725
[TBL] [Abstract][Full Text] [Related]
11. Electroreduction of Aryldiazonium Ion at the Polar and Non-Polar Faces of ZnO: Characterisation of the Grafted Films and Their Influence on Near-Surface Band Bending.
McNeill AR; Martinez-Gazoni R; Reeves RJ; Allen MW; Downard AJ
Chemphyschem; 2021 Jul; 22(13):1344-1351. PubMed ID: 33942472
[TBL] [Abstract][Full Text] [Related]
12. Te concentration dependent photoemission and inverse-photoemission study of FeSe
Yokoya T; Yoshida R; Utsumi Y; Tsubota K; Okazaki H; Wakita T; Mizuguchi Y; Takano Y; Muro T; Kato Y; Kumigashira H; Oshima M; Harima H; Aiura Y; Sato H; Ino A; Namatame H; Taniguchi M; Hirai M; Muraoka Y
Sci Technol Adv Mater; 2012 Oct; 13(5):054403. PubMed ID: 27877521
[TBL] [Abstract][Full Text] [Related]
13. Pit assisted oxygen chemisorption on GaN surfaces.
Mishra M; Krishna T C S; Aggarwal N; Kaur M; Singh S; Gupta G
Phys Chem Chem Phys; 2015 Jun; 17(23):15201-8. PubMed ID: 25991084
[TBL] [Abstract][Full Text] [Related]
14. Nature of the well screened state in hard X-ray Mn 2p core-level photoemission measurements of La1-xSrxMnO3 films.
Horiba K; Taguchi M; Chainani A; Takata Y; Ikenaga E; Miwa D; Nishino Y; Tamasaku K; Awaji M; Takeuchi A; Yabashi M; Namatame H; Taniguchi M; Kumigashira H; Oshima M; Lippmaa M; Kawasaki M; Koinuma H; Kobayashi K; Ishikawa T; Shin S
Phys Rev Lett; 2004 Dec; 93(23):236401. PubMed ID: 15601180
[TBL] [Abstract][Full Text] [Related]
15. Thickness-Dependent Binding Energy Shift in Few-Layer MoS2 Grown by Chemical Vapor Deposition.
Lin YK; Chen RS; Chou TC; Lee YH; Chen YF; Chen KH; Chen LC
ACS Appl Mater Interfaces; 2016 Aug; 8(34):22637-46. PubMed ID: 27488185
[TBL] [Abstract][Full Text] [Related]
16. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures.
Janicki L; Kunert G; Sawicki M; Piskorska-Hommel E; Gas K; Jakiela R; Hommel D; Kudrawiec R
Sci Rep; 2017 Feb; 7():41877. PubMed ID: 28150798
[TBL] [Abstract][Full Text] [Related]
17. Complex hybridization physics in CaFe
Pandeya RP; Pramanik A; Sakhya AP; Thamizhavel A; Maiti K
J Phys Condens Matter; 2020 May; 32(33):. PubMed ID: 32252034
[TBL] [Abstract][Full Text] [Related]
18. In-situ synchrotron radiation photoemission spectroscopy study of the initial atomic layer deposition of Al2O3 film on Si(001) substrate.
Kim SH; Lee BK; Baik J; Jeon C; Lee SS; Lee J; Hwang HN; Hwang CC; Park CY; An KS
J Nanosci Nanotechnol; 2011 May; 11(5):4328-32. PubMed ID: 21780451
[TBL] [Abstract][Full Text] [Related]
19. Hydrogenation-produced In
Park BG; Reddeppa M; Kim YH; Kim SG; Kim MD
Nanotechnology; 2020 Aug; 31(33):335503. PubMed ID: 32344382
[TBL] [Abstract][Full Text] [Related]
20. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.
Liu J; Liu X; Xu X; Wang J; Li C; Wei H; Yang S; Zhu Q; Fan Y; Zhang X; Wang Z
Nanoscale Res Lett; 2010 Jun; 5(8):1340-3. PubMed ID: 20676206
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]