These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
177 related articles for article (PubMed ID: 27877816)
1. A review of molecular beam epitaxy of ferroelectric BaTiO Mazet L; Yang SM; Kalinin SV; Schamm-Chardon S; Dubourdieu C Sci Technol Adv Mater; 2015 Jun; 16(3):036005. PubMed ID: 27877816 [TBL] [Abstract][Full Text] [Related]
2. Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode. Dubourdieu C; Bruley J; Arruda TM; Posadas A; Jordan-Sweet J; Frank MM; Cartier E; Frank DJ; Kalinin SV; Demkov AA; Narayanan V Nat Nanotechnol; 2013 Oct; 8(10):748-54. PubMed ID: 24077030 [TBL] [Abstract][Full Text] [Related]
3. Ferroelectric properties of vertically aligned nanostructured BaTiO3-CeO2 thin films and their integration on silicon. Khatkhatay F; Chen A; Lee JH; Zhang W; Abdel-Raziq H; Wang H ACS Appl Mater Interfaces; 2013 Dec; 5(23):12541-7. PubMed ID: 24266680 [TBL] [Abstract][Full Text] [Related]
4. Microstructure and ferroelectricity of BaTiO Kormondy KJ; Popoff Y; Sousa M; Eltes F; Caimi D; Rossell MD; Fiebig M; Hoffmann P; Marchiori C; Reinke M; Trassin M; Demkov AA; Fompeyrine J; Abel S Nanotechnology; 2017 Feb; 28(7):075706. PubMed ID: 27973350 [TBL] [Abstract][Full Text] [Related]
5. Thick BaTiO Posadas AB; Park H; Reynaud M; Cao W; Reynolds JD; Guo W; Jeyaselvan V; Beskin I; Mashanovich GZ; Warner JH; Demkov AA ACS Appl Mater Interfaces; 2021 Nov; 13(43):51230-51244. PubMed ID: 34669388 [TBL] [Abstract][Full Text] [Related]
7. Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO Gómez A; Vila-Fungueiriño JM; Moalla R; Saint-Girons G; Gázquez J; Varela M; Bachelet R; Gich M; Rivadulla F; Carretero-Genevrier A Small; 2017 Oct; 13(39):. PubMed ID: 28809085 [TBL] [Abstract][Full Text] [Related]
8. Carrier density modulation in a germanium heterostructure by ferroelectric switching. Ponath P; Fredrickson K; Posadas AB; Ren Y; Wu X; Vasudevan RK; Okatan MB; Jesse S; Aoki T; McCartney MR; Smith DJ; Kalinin SV; Lai K; Demkov AA Nat Commun; 2015 Jan; 6():6067. PubMed ID: 25586049 [TBL] [Abstract][Full Text] [Related]
9. Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: suitability for low-power fin field-effect transistors. Hudait MK; Clavel M; Goley P; Jain N; Zhu Y Sci Rep; 2014 Nov; 4():6964. PubMed ID: 25376723 [TBL] [Abstract][Full Text] [Related]
11. Highly heterogeneous epitaxy of flexoelectric BaTiO Dai L; Zhao J; Li J; Chen B; Zhai S; Xue Z; Di Z; Feng B; Sun Y; Luo Y; Ma M; Zhang J; Ding S; Zhao L; Jiang Z; Luo W; Quan Y; Schwarzkopf J; Schroeder T; Ye ZG; Xie YH; Ren W; Niu G Nat Commun; 2022 May; 13(1):2990. PubMed ID: 35637222 [TBL] [Abstract][Full Text] [Related]
12. Integration of Single Oriented Oxide Superlattices on Silicon Using Various Template Techniques. Chen B; Jovanovic Z; Abel S; Le PTP; Halisdemir U; Smithers M; Diaz-Fernandez D; Spreitzer M; Fompeyrine J; Rijnders G; Koster G ACS Appl Mater Interfaces; 2020 Sep; 12(38):42925-42932. PubMed ID: 32842731 [TBL] [Abstract][Full Text] [Related]
13. Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications. Hudait MK; Clavel M; Zhu Y; Goley PS; Kundu S; Maurya D; Priya S ACS Appl Mater Interfaces; 2015 Mar; 7(9):5471-9. PubMed ID: 25695205 [TBL] [Abstract][Full Text] [Related]
14. Integration of highly anisotropic multiferroic BaTiO Kalaswad M; Zhang B; Wang X; Wang H; Gao X; Wang H Nanoscale Adv; 2020 Sep; 2(9):4172-4178. PubMed ID: 36132794 [TBL] [Abstract][Full Text] [Related]
16. A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO Yan X; He H; Liu G; Zhao Z; Pei Y; Liu P; Zhao J; Zhou Z; Wang K; Yan H Adv Mater; 2022 Jun; 34(23):e2110343. PubMed ID: 35289446 [TBL] [Abstract][Full Text] [Related]
17. BaTiO3 integration with nanostructured epitaxial (100), (110), and (111) germanium for multifunctional devices. Hudait MK; Zhu Y; Jain N; Maurya D; Zhou Y; Varghese R; Priya S ACS Appl Mater Interfaces; 2013 Nov; 5(21):11446-52. PubMed ID: 24134542 [TBL] [Abstract][Full Text] [Related]
20. Freestanding Oxide Membranes for Epitaxial Ferroelectric Heterojunctions. Sheeraz M; Jung MH; Kim YK; Lee NJ; Jeong S; Choi JS; Jo YJ; Cho S; Kim IW; Kim YM; Kim S; Ahn CW; Yang SM; Jeong HY; Kim TH ACS Nano; 2023 Jul; 17(14):13510-13521. PubMed ID: 37406362 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]