These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
160 related articles for article (PubMed ID: 27906404)
1. Highly efficient and stable MoS Lockhart de la Rosa CJ; Nourbakhsh A; Heyne M; Asselberghs I; Huyghebaert C; Radu I; Heyns M; De Gendt S Nanoscale; 2017 Jan; 9(1):258-265. PubMed ID: 27906404 [TBL] [Abstract][Full Text] [Related]
2. Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films. Kim S; Zhao P; Aikawa S; Einarsson E; Chiashi S; Maruyama S ACS Appl Mater Interfaces; 2015 May; 7(18):9702-8. PubMed ID: 25872933 [TBL] [Abstract][Full Text] [Related]
3. A "Click" Reaction to Engineer MoS Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073 [TBL] [Abstract][Full Text] [Related]
4. Triethanolamine doped multilayer MoS Ryu MY; Jang HK; Lee KJ; Piao M; Ko SP; Shin M; Huh J; Kim GT Phys Chem Chem Phys; 2017 May; 19(20):13133-13139. PubMed ID: 28489103 [TBL] [Abstract][Full Text] [Related]
5. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Yang L; Majumdar K; Liu H; Du Y; Wu H; Hatzistergos M; Hung PY; Tieckelmann R; Tsai W; Hobbs C; Ye PD Nano Lett; 2014 Nov; 14(11):6275-80. PubMed ID: 25310177 [TBL] [Abstract][Full Text] [Related]
6. Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots. Wang W; Niu X; Qian H; Guan L; Zhao M; Ding X; Zhang S; Wang Y; Sha J Nanotechnology; 2016 Dec; 27(50):505204. PubMed ID: 27841165 [TBL] [Abstract][Full Text] [Related]
7. Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance. Khalil HM; Khan MF; Eom J; Noh H ACS Appl Mater Interfaces; 2015 Oct; 7(42):23589-96. PubMed ID: 26434774 [TBL] [Abstract][Full Text] [Related]
8. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954 [TBL] [Abstract][Full Text] [Related]
9. Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate. Lin JD; Han C; Wang F; Wang R; Xiang D; Qin S; Zhang XA; Wang L; Zhang H; Wee AT; Chen W ACS Nano; 2014 May; 8(5):5323-9. PubMed ID: 24785254 [TBL] [Abstract][Full Text] [Related]
10. Air-stable and efficient electron doping of monolayer MoS Ogura H; Kaneda M; Nakanishi Y; Nonoguchi Y; Pu J; Ohfuchi M; Irisawa T; Lim HE; Endo T; Yanagi K; Takenobu T; Miyata Y Nanoscale; 2021 May; 13(19):8784-8789. PubMed ID: 33928997 [TBL] [Abstract][Full Text] [Related]
11. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors. Liu W; Sarkar D; Kang J; Cao W; Banerjee K ACS Nano; 2015 Aug; 9(8):7904-12. PubMed ID: 26039221 [TBL] [Abstract][Full Text] [Related]
12. Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition. Woo WJ; Seo S; Yoon H; Lee S; Kim D; Park S; Kim Y; Sohn I; Park J; Chung SM; Kim H J Chem Phys; 2024 Mar; 160(10):. PubMed ID: 38456534 [TBL] [Abstract][Full Text] [Related]
13. Threshold Voltage Control of Multilayered MoS Roh J; Ryu JH; Baek GW; Jung H; Seo SG; An K; Jeong BG; Lee DC; Hong BH; Bae WK; Lee JH; Lee C; Jin SH Small; 2019 Feb; 15(7):e1803852. PubMed ID: 30637933 [TBL] [Abstract][Full Text] [Related]
14. Stable and Reversible Triphenylphosphine-Based n-Type Doping Technique for Molybdenum Disulfide (MoS Heo K; Jo SH; Shim J; Kang DH; Kim JH; Park JH ACS Appl Mater Interfaces; 2018 Sep; 10(38):32765-32772. PubMed ID: 30221922 [TBL] [Abstract][Full Text] [Related]
15. Approaching Ohmic Contacts for Ideal Monolayer MoS Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044 [TBL] [Abstract][Full Text] [Related]
16. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed. Lee HS; Baik SS; Lee K; Min SW; Jeon PJ; Kim JS; Choi K; Choi HJ; Kim JH; Im S ACS Nano; 2015 Aug; 9(8):8312-20. PubMed ID: 26169189 [TBL] [Abstract][Full Text] [Related]
17. Tailoring the Electrical Characteristics of MoS Jeong I; Cho K; Yun S; Shin J; Kim J; Kim GT; Lee T; Chung S ACS Nano; 2022 Apr; 16(4):6215-6223. PubMed ID: 35377600 [TBL] [Abstract][Full Text] [Related]
18. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Rai A; Valsaraj A; Movva HC; Roy A; Ghosh R; Sonde S; Kang S; Chang J; Trivedi T; Dey R; Guchhait S; Larentis S; Register LF; Tutuc E; Banerjee SK Nano Lett; 2015 Jul; 15(7):4329-36. PubMed ID: 26091062 [TBL] [Abstract][Full Text] [Related]
19. Effect of Dielectric Interface on the Performance of MoS Li X; Xiong X; Li T; Li S; Zhang Z; Wu Y ACS Appl Mater Interfaces; 2017 Dec; 9(51):44602-44608. PubMed ID: 29199423 [TBL] [Abstract][Full Text] [Related]
20. Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure. Chen L; Xue F; Li X; Huang X; Wang L; Kou J; Wang ZL ACS Nano; 2016 Jan; 10(1):1546-51. PubMed ID: 26695840 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]