211 related articles for article (PubMed ID: 27960444)
1. Epitaxial Growth of Mg
Lou X; Zhou H; Kim SB; Alghamdi S; Gong X; Feng J; Wang X; Ye PD; Gordon RG
Nano Lett; 2016 Dec; 16(12):7650-7654. PubMed ID: 27960444
[TBL] [Abstract][Full Text] [Related]
2. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
Shih HY; Chu FC; Das A; Lee CY; Chen MJ; Lin RM
Nanoscale Res Lett; 2016 Dec; 11(1):235. PubMed ID: 27129687
[TBL] [Abstract][Full Text] [Related]
3. Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO
Yeom MJ; Yang JY; Lee CH; Heo J; Chung RBK; Yoo G
Micromachines (Basel); 2021 Nov; 12(12):. PubMed ID: 34945290
[TBL] [Abstract][Full Text] [Related]
4. Performance Enhancement in N
Yang SK; Mazumder S; Wu ZG; Wang YH
Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062
[TBL] [Abstract][Full Text] [Related]
5. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.
Lee SM; Yum JH; Yoon S; Larsen ES; Lee WC; Kim SK; Shervin S; Wang W; Ryou JH; Bielawski CW; Oh J
ACS Appl Mater Interfaces; 2017 Dec; 9(48):41973-41979. PubMed ID: 29148718
[TBL] [Abstract][Full Text] [Related]
6. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E; Giannazzo F; Di Franco S; Greco G; Fiorenza P; Roccaforte F; Prystawko P; Kruszewski P; Leszczynski M; Cora I; Pécz B; Fogarassy Z; Lo Nigro R
Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947665
[TBL] [Abstract][Full Text] [Related]
7. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
[TBL] [Abstract][Full Text] [Related]
8. Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková A; Hájek F; Hubáček T; Gedeonová Z; Hubík P; Hývl M; Pangrác J; Dominec F; Košutová T
ACS Appl Mater Interfaces; 2023 Apr; 15(15):19646-19652. PubMed ID: 37022802
[TBL] [Abstract][Full Text] [Related]
9. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.
Liu XY; Zhao SX; Zhang LQ; Huang HF; Shi JS; Zhang CM; Lu HL; Wang PF; Zhang DW
Nanoscale Res Lett; 2015; 10():109. PubMed ID: 25852404
[TBL] [Abstract][Full Text] [Related]
10. Steep Switching of In
Chen PG; Chen KT; Tang M; Wang ZY; Chou YC; Lee MH
Sensors (Basel); 2018 Aug; 18(9):. PubMed ID: 30149580
[TBL] [Abstract][Full Text] [Related]
11. Remarkable Reduction in I
Mazumder S; Pal P; Lee KW; Wang YH
Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556876
[TBL] [Abstract][Full Text] [Related]
12. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.
Zhao SX; Liu XY; Zhang LQ; Huang HF; Shi JS; Wang PF
Nanoscale Res Lett; 2016 Dec; 11(1):137. PubMed ID: 26964559
[TBL] [Abstract][Full Text] [Related]
13. AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO
Lin YS; Lu CC
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374767
[TBL] [Abstract][Full Text] [Related]
14. GaN/NbN epitaxial semiconductor/superconductor heterostructures.
Yan R; Khalsa G; Vishwanath S; Han Y; Wright J; Rouvimov S; Katzer DS; Nepal N; Downey BP; Muller DA; Xing HG; Meyer DJ; Jena D
Nature; 2018 Mar; 555(7695):183-189. PubMed ID: 29516996
[TBL] [Abstract][Full Text] [Related]
15. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
Zhernokletov DM; Negara MA; Long RD; Aloni S; Nordlund D; McIntyre PC
ACS Appl Mater Interfaces; 2015 Jun; 7(23):12774-80. PubMed ID: 25988586
[TBL] [Abstract][Full Text] [Related]
16. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.
Liu X; Lu Y; Yu W; Wu J; He J; Tang D; Liu Z; Somasuntharam P; Zhu D; Liu W; Cao P; Han S; Chen S; Tan LS
Sci Rep; 2015 Sep; 5():14092. PubMed ID: 26364872
[TBL] [Abstract][Full Text] [Related]
17. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.
Poppitz D; Lotnyk A; Gerlach JW; Lenzner J; Grundmann M; Rauschenbach B
Micron; 2015 Jun; 73():1-8. PubMed ID: 25846303
[TBL] [Abstract][Full Text] [Related]
18. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
19. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.
Rauschenbach B; Lotnyk A; Neumann L; Poppitz D; Gerlach JW
Materials (Basel); 2017 Jun; 10(7):. PubMed ID: 28773052
[TBL] [Abstract][Full Text] [Related]
20. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al
Huang CY; Mazumder S; Lin PC; Lee KW; Wang YH
Materials (Basel); 2022 Oct; 15(19):. PubMed ID: 36234237
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
