These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

199 related articles for article (PubMed ID: 27977005)

  • 1. Hopping conduction and random telegraph signal in an exfoliated multilayer MoS
    Li L; Lee I; Youn DH; Kim GH
    Nanotechnology; 2017 Feb; 28(7):075201. PubMed ID: 27977005
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors.
    Chu L; Schmidt H; Pu J; Wang S; Ozyilmaz B; Takenobu T; Eda G
    Sci Rep; 2014 Dec; 4():7293. PubMed ID: 25465059
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.
    Na J; Joo MK; Shin M; Huh J; Kim JS; Piao M; Jin JE; Jang HK; Choi HJ; Shim JH; Kim GT
    Nanoscale; 2014 Jan; 6(1):433-41. PubMed ID: 24212201
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.
    Kwak JY; Hwang J; Calderon B; Alsalman H; Munoz N; Schutter B; Spencer MG
    Nano Lett; 2014 Aug; 14(8):4511-6. PubMed ID: 24978093
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe
    Wang Z; Ali N; Ali F; Choi H; Shin H; Yoo WJ
    ACS Appl Mater Interfaces; 2022 Dec; 14(50):55787-55794. PubMed ID: 36474350
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electronic Transport in Bilayer MoS
    Matis BR; Garces NY; Cleveland ER; Houston BH; Baldwin JW
    ACS Appl Mater Interfaces; 2017 Aug; 9(33):27995-28001. PubMed ID: 28745878
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Mott variable-range hopping transport in a MoS
    Xue J; Huang S; Wang JY; Xu HQ
    RSC Adv; 2019 Jun; 9(31):17885-17890. PubMed ID: 35520576
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate.
    Liu F; Ibukuro K; Husain MK; Li Z; Hillier J; Tomita I; Tsuchiya Y; Rutt H; Saito S
    Nanotechnology; 2018 Nov; 29(47):475201. PubMed ID: 30191886
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Nature of electronic states in atomically thin MoS₂ field-effect transistors.
    Ghatak S; Pal AN; Ghosh A
    ACS Nano; 2011 Oct; 5(10):7707-12. PubMed ID: 21902203
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Characterization of Single Defects in Ultrascaled MoS
    Stampfer B; Zhang F; Illarionov YY; Knobloch T; Wu P; Waltl M; Grill A; Appenzeller J; Grasser T
    ACS Nano; 2018 Jun; 12(6):5368-5375. PubMed ID: 29878746
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise.
    Tseng YH; Shen WC; Lin CJ
    J Appl Phys; 2012 Apr; 111(7):73701-737015. PubMed ID: 22536005
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Carrier transport at the metal-MoS2 interface.
    Ahmed F; Choi MS; Liu X; Yoo WJ
    Nanoscale; 2015 May; 7(20):9222-8. PubMed ID: 25927942
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Large thermoelectricity via variable range hopping in chemical vapor deposition grown single-layer MoS2.
    Wu J; Schmidt H; Amara KK; Xu X; Eda G; Özyilmaz B
    Nano Lett; 2014 May; 14(5):2730-4. PubMed ID: 24749833
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Probing the spin state of a single electron trap by random telegraph signal.
    Xiao M; Martin I; Jiang HW
    Phys Rev Lett; 2003 Aug; 91(7):078301. PubMed ID: 12935055
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tailoring the transfer characteristics and hysteresis in MoS
    Prasad P; Garg M; Chandni U
    Nanoscale; 2020 Dec; 12(46):23817-23823. PubMed ID: 33237076
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS
    Khan MA; Rathi S; Lee C; Lim D; Kim Y; Yun SJ; Youn DH; Kim GH
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):23961-23967. PubMed ID: 29938500
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.
    Lee HS; Baik SS; Lee K; Min SW; Jeon PJ; Kim JS; Choi K; Choi HJ; Kim JH; Im S
    ACS Nano; 2015 Aug; 9(8):8312-20. PubMed ID: 26169189
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electrical transport properties of single-layer WS2.
    Ovchinnikov D; Allain A; Huang YS; Dumcenco D; Kis A
    ACS Nano; 2014 Aug; 8(8):8174-81. PubMed ID: 25069042
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of magnetic field on Mott's variable-range hopping parameters in multiwall carbon nanotube mat.
    Arya VP; Prasad V; Kumar PS
    J Phys Condens Matter; 2012 Jun; 24(24):245602. PubMed ID: 22627115
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy.
    Howell SL; Jariwala D; Wu CC; Chen KS; Sangwan VK; Kang J; Marks TJ; Hersam MC; Lauhon LJ
    Nano Lett; 2015 Apr; 15(4):2278-84. PubMed ID: 25807012
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.