332 related articles for article (PubMed ID: 27998131)
1. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.
Ke WC; Lee FW; Chiang CY; Liang ZY; Chen WK; Seong TY
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34520-34529. PubMed ID: 27998131
[TBL] [Abstract][Full Text] [Related]
2. Vertical InGaN light-emitting diode with a retained patterned sapphire layer.
Yang YC; Sheu JK; Lee ML; Yen CH; Lai WC; Hon SJ; Ko TK
Opt Express; 2012 Nov; 20(23):A1019-25. PubMed ID: 23326851
[TBL] [Abstract][Full Text] [Related]
3. Vertical InGaN light-emitting diode with a retained patterned sapphire layer.
Yang YC; Sheu JK; Lee ML; Yen CH; Lai WC; Hon SJ; Ko TK
Opt Express; 2012 Nov; 20 Suppl 6():A1019-25. PubMed ID: 23187653
[TBL] [Abstract][Full Text] [Related]
4. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
[TBL] [Abstract][Full Text] [Related]
5. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.
Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK
J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092
[TBL] [Abstract][Full Text] [Related]
6. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
Lee KJ; Oh S; Kim SJ; Yim SY; Myoung N; Lee K; Kim JS; Jung SH; Chung TH; Park SJ
Nanotechnology; 2019 Oct; 30(41):415301. PubMed ID: 31300618
[TBL] [Abstract][Full Text] [Related]
7. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
You YH; Su VC; Ho TE; Lin BW; Lee ML; Das A; Hsu WC; Kuan CH; Lin RM
Nanoscale Res Lett; 2014; 9(1):596. PubMed ID: 25392706
[TBL] [Abstract][Full Text] [Related]
8. Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates.
Hwang SM; Song H; Seo YG; Son JS; Kim J; Baik KH
Opt Express; 2011 Nov; 19(23):23036-41. PubMed ID: 22109183
[TBL] [Abstract][Full Text] [Related]
9. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
[TBL] [Abstract][Full Text] [Related]
10. Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs.
Tao G; Cui S; Sun Y; Sun K; Zhou Q; Zhou S
Opt Lett; 2023 Aug; 48(16):4292-4295. PubMed ID: 37582015
[TBL] [Abstract][Full Text] [Related]
11. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
[TBL] [Abstract][Full Text] [Related]
12. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.
Lee CY; Tzou AJ; Lin BC; Lan YP; Chiu CH; Chi GC; Chen CH; Kuo HC; Lin RM; Chang CY
Nanoscale Res Lett; 2014; 9(1):505. PubMed ID: 25258616
[TBL] [Abstract][Full Text] [Related]
13. InGaN-based light-emitting diodes with an embedded conical air-voids structure.
Huang YC; Lin CF; Chen SH; Dai JJ; Wang GM; Huang KP; Chen KT; Hsu YH
Opt Express; 2011 Jan; 19 Suppl 1():A57-63. PubMed ID: 21263713
[TBL] [Abstract][Full Text] [Related]
14. Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes.
Seo TH; Lee GH; Park AH; Cho H; Kim JH; Chandramohan S; Jeon SR; Jang SG; Kim MJ; Suh EK
Nanoscale; 2017 Nov; 9(42):16223-16231. PubMed ID: 29043367
[TBL] [Abstract][Full Text] [Related]
15. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
[TBL] [Abstract][Full Text] [Related]
16. Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.
Seo TH; Park AH; Park S; Kim YH; Lee GH; Kim MJ; Jeong MS; Lee YH; Hahn YB; Suh EK
Sci Rep; 2015 Jan; 5():7747. PubMed ID: 25597492
[TBL] [Abstract][Full Text] [Related]
17. Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter.
Jia T; Zhang M; Zhang G; Hang S; Chu C; Zhang Y; Zhang ZH
Opt Express; 2023 Jan; 31(2):2931-2941. PubMed ID: 36785295
[TBL] [Abstract][Full Text] [Related]
18. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.
Hu H; Zhou S; Liu X; Gao Y; Gui C; Liu S
Sci Rep; 2017 Mar; 7():44627. PubMed ID: 28294166
[TBL] [Abstract][Full Text] [Related]
19. InGaN light emitting diodes with a laser-treated tapered GaN structure.
Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P
Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255
[TBL] [Abstract][Full Text] [Related]
20. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
