324 related articles for article (PubMed ID: 27998139)
1. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.
Benwadih M; Coppard R; Bonrad K; Klyszcz A; Vuillaume D
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34513-34519. PubMed ID: 27998139
[TBL] [Abstract][Full Text] [Related]
2. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
[TBL] [Abstract][Full Text] [Related]
3. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
Moon CJ; Kim HS
ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
[TBL] [Abstract][Full Text] [Related]
4. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
[TBL] [Abstract][Full Text] [Related]
5. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
6. Effect of Simplified-Single-Step Microwave Annealing in O₂ Ambient for High Performance Solution-Processed In-Ga-Zn-O Thin Film Transistors.
Cho SK; Cho WJ
J Nanosci Nanotechnol; 2020 Jul; 20(7):4163-4169. PubMed ID: 31968435
[TBL] [Abstract][Full Text] [Related]
7. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
8. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
[TBL] [Abstract][Full Text] [Related]
9. 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.
Park SY; Choi Y; Seo YH; Kim H; Lee DH; Truong PL; Jeon Y; Yoo H; Kwon SJ; Lee D; Cho ES
Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258222
[TBL] [Abstract][Full Text] [Related]
10. Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors.
Lee IS; Tak YJ; Kang BH; Yoo H; Jung S; Kim HJ
ACS Appl Mater Interfaces; 2020 Apr; 12(16):19123-19129. PubMed ID: 32227838
[TBL] [Abstract][Full Text] [Related]
11. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
12. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.
Kim YK; Ahn CH; Yun MG; Cho SW; Kang WJ; Cho HK
Sci Rep; 2016 May; 6():26287. PubMed ID: 27198067
[TBL] [Abstract][Full Text] [Related]
13. Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors.
Weidling AM; Turkani VS; Luo B; Schroder KA; Swisher SL
ACS Omega; 2021 Jul; 6(27):17323-17334. PubMed ID: 34278118
[TBL] [Abstract][Full Text] [Related]
14. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
Choi S; Kim KT; Park SK; Kim YH
Materials (Basel); 2019 Mar; 12(6):. PubMed ID: 30871272
[TBL] [Abstract][Full Text] [Related]
15. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation.
Cho MH; Cho WJ
J Nanosci Nanotechnol; 2020 Nov; 20(11):6920-6924. PubMed ID: 32604537
[TBL] [Abstract][Full Text] [Related]
16. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
[TBL] [Abstract][Full Text] [Related]
17. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
[TBL] [Abstract][Full Text] [Related]
18. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
19. The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.
Shin Y; Kim ST; Kim K; Kim MY; Oh S; Jeong JK
Sci Rep; 2017 Sep; 7(1):10885. PubMed ID: 28883475
[TBL] [Abstract][Full Text] [Related]
20. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.
Heo JS; Jo JW; Kang J; Jeong CY; Jeong HY; Kim SK; Kim K; Kwon HI; Kim J; Kim YH; Kim MG; Park SK
ACS Appl Mater Interfaces; 2016 Apr; 8(16):10403-12. PubMed ID: 27035796
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
