These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

149 related articles for article (PubMed ID: 28058829)

  • 1. Detecting Electric Dipoles Interaction at the Interface of Ferroelectric and Electrolyte Using Graphene Field Effect Transistors.
    Ma C; Lu R; Hu G; Han J; Liu M; Li J; Wu J
    ACS Appl Mater Interfaces; 2017 Feb; 9(4):4244-4252. PubMed ID: 28058829
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Self-Organization of Ions at the Interface between Graphene and Ionic Liquid DEME-TFSI.
    Hu G; Pandey GP; Liu Q; Anaredy RS; Ma C; Liu M; Li J; Shaw SK; Wu J
    ACS Appl Mater Interfaces; 2017 Oct; 9(40):35437-35443. PubMed ID: 28920423
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates.
    Ma C; Gong Y; Lu R; Brown E; Ma B; Li J; Wu J
    Nanoscale; 2015 Nov; 7(44):18489-97. PubMed ID: 26331952
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb
    Wu L; Qin L; Zhang Y; Alamri M; Gong M; Zhang W; Zhang D; Chan WL; Wu JZ
    ACS Appl Mater Interfaces; 2018 Apr; 10(15):12824-12830. PubMed ID: 29577728
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.
    Brown E; Ma C; Acharya J; Ma B; Wu J; Li J
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22417-22. PubMed ID: 25405727
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.
    Hu G; Shen Y; Shen L; Ma C; Liu M
    Materials (Basel); 2023 May; 16(10):. PubMed ID: 37241425
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.
    Hu Z; Wang X; Nan T; Zhou Z; Ma B; Chen X; Jones JG; Howe BM; Brown GJ; Gao Y; Lin H; Wang Z; Guo R; Chen S; Shi X; Shi W; Sun H; Budil D; Liu M; Sun NX
    Sci Rep; 2016 Sep; 6():32408. PubMed ID: 27581071
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Hysteresis of electronic transport in graphene transistors.
    Wang H; Wu Y; Cong C; Shang J; Yu T
    ACS Nano; 2010 Dec; 4(12):7221-8. PubMed ID: 21047068
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.
    Fabiano S; Crispin X; Berggren M
    ACS Appl Mater Interfaces; 2014 Jan; 6(1):438-42. PubMed ID: 24251907
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Ionic liquid thin layer-induced memory effects in organic field-effect transistors.
    Eguchi K; Matsushita MM; Awaga K
    Phys Chem Chem Phys; 2019 Sep; 21(35):18823-18829. PubMed ID: 31168557
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology.
    Kam KA; Tengan BIC; Hayashi CK; Ordonez RC; Garmire DG
    Sensors (Basel); 2018 Aug; 18(9):. PubMed ID: 30142949
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators.
    Sun YL; Xie D; Xu JL; Zhang C; Dai RX; Li X; Meng XJ; Zhu HW
    Sci Rep; 2016 Mar; 6():23090. PubMed ID: 26980284
    [TBL] [Abstract][Full Text] [Related]  

  • 13. 3D structure of the electric double layer of ionic liquid-alcohol mixtures at the electrochemical interface.
    Otero-Mato JM; Montes-Campos H; Cabeza O; Diddens D; Ciach A; Gallego LJ; Varela LM
    Phys Chem Chem Phys; 2018 Dec; 20(48):30412-30427. PubMed ID: 30500015
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Characterization and simulation of electrolyte-gated organic field-effect transistors.
    Melzer K; Brändlein M; Popescu B; Popescu D; Lugli P; Scarpa G
    Faraday Discuss; 2014; 174():399-411. PubMed ID: 25325799
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.
    Pham HT; Yang JH; Lee DS; Lee BH; Jeong HD
    ACS Appl Mater Interfaces; 2016 Mar; 8(11):7248-56. PubMed ID: 26927618
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene).
    Gu BS; Park ES; Kwon JH; Kim MH
    Materials (Basel); 2023 Mar; 16(6):. PubMed ID: 36984165
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Superconductivity at 38 K at an electrochemical interface between an ionic liquid and FeSe
    Kouno S; Sato Y; Katayama Y; Ichinose A; Asami D; Nabeshima F; Imai Y; Maeda A; Ueno K
    Sci Rep; 2018 Oct; 8(1):14731. PubMed ID: 30283006
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Interfacial Cation-Defect Charge Dipoles in Stacked TiO
    Zhang L; Janotti A; Meng AC; Tang K; Van de Walle CG; McIntyre PC
    ACS Appl Mater Interfaces; 2018 Feb; 10(6):5140-5146. PubMed ID: 29369616
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Probing the electric double-layer capacitance in a Keggin-type polyoxometalate ionic liquid gated graphene transistor.
    George L; Shakeela K; Rao GR; Jaiswal M
    Phys Chem Chem Phys; 2018 Jul; 20(27):18474-18483. PubMed ID: 29947378
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Graphene/Ferroelectric (Ge-Doped HfO
    Dragoman M; Dinescu A; Dragoman D; Palade C; Teodorescu VŞ; Ciurea ML
    Nanomaterials (Basel); 2022 Jan; 12(2):. PubMed ID: 35055296
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.