These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

193 related articles for article (PubMed ID: 28092953)

  • 21. Wafer-Scale Demonstration of MBC-FET and C-FET Arrays Based on Two-Dimensional Semiconductors.
    Xia Y; Zong L; Pan Y; Chen X; Zhou L; Song Y; Tong L; Guo X; Ma J; Gou S; Xu Z; Dai S; Zhang DW; Zhou P; Ye Y; Bao W
    Small; 2022 May; 18(20):e2107650. PubMed ID: 35435320
    [TBL] [Abstract][Full Text] [Related]  

  • 22. In
    Xu Q; Liu X; Wan B; Yang Z; Li F; Lu J; Hu G; Pan C; Wang ZL
    ACS Nano; 2018 Sep; 12(9):9608-9616. PubMed ID: 30188684
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors.
    Peng B; Zheng W; Qin J; Zhang W
    Materials (Basel); 2018 Mar; 11(3):. PubMed ID: 29543770
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.
    Liu Y; Guo J; Wu Y; Zhu E; Weiss NO; He Q; Wu H; Cheng HC; Xu Y; Shakir I; Huang Y; Duan X
    Nano Lett; 2016 Oct; 16(10):6337-6342. PubMed ID: 27579678
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Impact of device scaling on the electrical properties of MoS
    Arutchelvan G; Smets Q; Verreck D; Ahmed Z; Gaur A; Sutar S; Jussot J; Groven B; Heyns M; Lin D; Asselberghs I; Radu I
    Sci Rep; 2021 Mar; 11(1):6610. PubMed ID: 33758215
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe
    Cao ZL; Guo XH; Yao KL; Zhu L
    Nanoscale; 2023 Nov; 15(42):17029-17035. PubMed ID: 37846516
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Steep-slope hysteresis-free negative capacitance MoS
    Si M; Su CJ; Jiang C; Conrad NJ; Zhou H; Maize KD; Qiu G; Wu CT; Shakouri A; Alam MA; Ye PD
    Nat Nanotechnol; 2018 Jan; 13(1):24-28. PubMed ID: 29255287
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Sub-5 nm Gate-Length Monolayer Selenene Transistors.
    Li Q; Tan X; Yang Y; Xiong X; Zhang T; Weng Z
    Molecules; 2023 Jul; 28(14):. PubMed ID: 37513262
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Benchmarking monolayer MoS
    Sebastian A; Pendurthi R; Choudhury TH; Redwing JM; Das S
    Nat Commun; 2021 Jan; 12(1):693. PubMed ID: 33514710
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures.
    Yang Q; Luo ZD; Duan H; Gan X; Zhang D; Li Y; Tan D; Seidel J; Chen W; Liu Y; Hao Y; Han G
    Nat Commun; 2024 Feb; 15(1):1138. PubMed ID: 38326391
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Two-Dimensional Cold Electron Transport for Steep-Slope Transistors.
    Liu M; Jaiswal HN; Shahi S; Wei S; Fu Y; Chang C; Chakravarty A; Liu X; Yang C; Liu Y; Lee YH; Perebeinos V; Yao F; Li H
    ACS Nano; 2021 Mar; 15(3):5762-5772. PubMed ID: 33705651
    [TBL] [Abstract][Full Text] [Related]  

  • 32. A comparative study on top-gated and bottom-gated multilayer MoS
    Zou X; Xu J; Huang H; Zhu Z; Wang H; Li B; Liao L; Fang G
    Nanotechnology; 2018 Jun; 29(24):245201. PubMed ID: 29582776
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Immunity to Contact Scaling in MoS
    Cheng Z; Yu Y; Singh S; Price K; Noyce SG; Lin YC; Cao L; Franklin AD
    Nano Lett; 2019 Aug; 19(8):5077-5085. PubMed ID: 31283241
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current.
    Das S
    Sci Rep; 2016 Oct; 6():34811. PubMed ID: 27721489
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Double-Gate MoS
    Yi J; Sun X; Zhu C; Li S; Liu Y; Zhu X; You W; Liang D; Shuai Q; Wu Y; Li D; Pan A
    Adv Mater; 2021 Jul; 33(27):e2101036. PubMed ID: 34057257
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS
    Cheng L; Lee J; Zhu H; Ravichandran AV; Wang Q; Lucero AT; Kim MJ; Wallace RM; Colombo L; Kim J
    ACS Nano; 2017 Oct; 11(10):10243-10252. PubMed ID: 28832118
    [TBL] [Abstract][Full Text] [Related]  

  • 37. High-Performance Wafer-Scale MoS
    Xu H; Zhang H; Guo Z; Shan Y; Wu S; Wang J; Hu W; Liu H; Sun Z; Luo C; Wu X; Xu Z; Zhang DW; Bao W; Zhou P
    Small; 2018 Nov; 14(48):e1803465. PubMed ID: 30328296
    [TBL] [Abstract][Full Text] [Related]  

  • 38. A subthermionic tunnel field-effect transistor with an atomically thin channel.
    Sarkar D; Xie X; Liu W; Cao W; Kang J; Gong Y; Kraemer S; Ajayan PM; Banerjee K
    Nature; 2015 Oct; 526(7571):91-5. PubMed ID: 26432247
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Molecular Approach to Electrochemically Switchable Monolayer MoS
    Zhao Y; Bertolazzi S; Maglione MS; Rovira C; Mas-Torrent M; Samorì P
    Adv Mater; 2020 May; 32(19):e2000740. PubMed ID: 32239571
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
    Liu E; Fu Y; Wang Y; Feng Y; Liu H; Wan X; Zhou W; Wang B; Shao L; Ho CH; Huang YS; Cao Z; Wang L; Li A; Zeng J; Song F; Wang X; Shi Y; Yuan H; Hwang HY; Cui Y; Miao F; Xing D
    Nat Commun; 2015 May; 6():6991. PubMed ID: 25947630
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.