529 related articles for article (PubMed ID: 28112895)
1. Flexible All-Inorganic Perovskite CsPbBr
Liu D; Lin Q; Zang Z; Wang M; Wangyang P; Tang X; Zhou M; Hu W
ACS Appl Mater Interfaces; 2017 Feb; 9(7):6171-6176. PubMed ID: 28112895
[TBL] [Abstract][Full Text] [Related]
2. Flexible Hybrid Organic-Inorganic Perovskite Memory.
Gu C; Lee JS
ACS Nano; 2016 May; 10(5):5413-8. PubMed ID: 27093096
[TBL] [Abstract][Full Text] [Related]
3. Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb
Ge S; Wang Y; Xiang Z; Cui Y
ACS Appl Mater Interfaces; 2018 Jul; 10(29):24620-24626. PubMed ID: 29969009
[TBL] [Abstract][Full Text] [Related]
4. Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb
Paul T; Sarkar PK; Maiti S; Sahoo A; Chattopadhyay KK
Dalton Trans; 2022 Mar; 51(10):3864-3874. PubMed ID: 35171172
[TBL] [Abstract][Full Text] [Related]
5. Resistive Switching in Al/Al2O3/TiO2/Al/PES Flexible Device for Nonvolatile Memory Application.
Lin CC; Lee WY; Lee HT
J Nanosci Nanotechnol; 2016 May; 16(5):4820-4. PubMed ID: 27483828
[TBL] [Abstract][Full Text] [Related]
6. Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio.
Li L; Chen Y; Cai C; Ma P; Ji H; Zou G
Small; 2022 Jan; 18(3):e2103881. PubMed ID: 34816558
[TBL] [Abstract][Full Text] [Related]
7. Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).
Hmar JJL
RSC Adv; 2018 May; 8(36):20423-20433. PubMed ID: 35541659
[TBL] [Abstract][Full Text] [Related]
8. Air-Stable Lead-Free Perovskite Thin Film Based on CsBi
Xiong Z; Hu W; She Y; Lin Q; Hu L; Tang X; Sun K
ACS Appl Mater Interfaces; 2019 Aug; 11(33):30037-30044. PubMed ID: 31342747
[TBL] [Abstract][Full Text] [Related]
9. Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains.
Cao X; Han Y; Zhou J; Zuo W; Gao X; Han L; Pang X; Zhang L; Liu Y; Cao S
ACS Appl Mater Interfaces; 2019 Oct; 11(39):35914-35923. PubMed ID: 31495172
[TBL] [Abstract][Full Text] [Related]
10. Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals.
Liu J; Jin J; Yang Z; Cai J; Yue J; Impundu J; Liu H; Wei H; Peng Z; Li YJ; Sun L
ACS Appl Mater Interfaces; 2020 Jul; 12(28):31776-31782. PubMed ID: 32567297
[TBL] [Abstract][Full Text] [Related]
11. Large and Ultrastable All-Inorganic CsPbBr
Yang Z; Xu Q; Wang X; Lu J; Wang H; Li F; Zhang L; Hu G; Pan C
Adv Mater; 2018 Nov; 30(44):e1802110. PubMed ID: 30247791
[TBL] [Abstract][Full Text] [Related]
12. S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device.
Moudgil A; Kalyani N; Sinsinbar G; Das S; Mishra P
ACS Appl Mater Interfaces; 2018 Feb; 10(5):4866-4873. PubMed ID: 29308639
[TBL] [Abstract][Full Text] [Related]
13. High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure.
Kang K; Ahn H; Song Y; Lee W; Kim J; Kim Y; Yoo D; Lee T
Adv Mater; 2019 May; 31(21):e1804841. PubMed ID: 30932266
[TBL] [Abstract][Full Text] [Related]
14. One-Step Preparation of Long-Term Stable and Flexible CsPbBr
Li Y; Lv Y; Guo Z; Dong L; Zheng J; Chai C; Chen N; Lu Y; Chen C
ACS Appl Mater Interfaces; 2018 May; 10(18):15888-15894. PubMed ID: 29671575
[TBL] [Abstract][Full Text] [Related]
15. Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories.
Han JS; Le QV; Choi J; Kim H; Kim SG; Hong K; Moon CW; Kim TL; Kim SY; Jang HW
ACS Appl Mater Interfaces; 2019 Feb; 11(8):8155-8163. PubMed ID: 30698005
[TBL] [Abstract][Full Text] [Related]
16. Efficient Flexible Inorganic Perovskite Light-Emitting Diodes Fabricated with CsPbBr
Chen C; Han TH; Tan S; Xue J; Zhao Y; Liu Y; Wang H; Hu W; Bao C; Mazzeo M; Wang R; Duan Y; Yang Y
Nano Lett; 2020 Jun; 20(6):4673-4680. PubMed ID: 32437162
[TBL] [Abstract][Full Text] [Related]
17. Flexible Nanoporous WO3-x Nonvolatile Memory Device.
Ji Y; Yang Y; Lee SK; Ruan G; Kim TW; Fei H; Lee SH; Kim DY; Yoon J; Tour JM
ACS Nano; 2016 Aug; 10(8):7598-603. PubMed ID: 27482761
[TBL] [Abstract][Full Text] [Related]
18. Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius.
Choi J; Le QV; Hong K; Moon CW; Han JS; Kwon KC; Cha PR; Kwon Y; Kim SY; Jang HW
ACS Appl Mater Interfaces; 2017 Sep; 9(36):30764-30771. PubMed ID: 28825292
[TBL] [Abstract][Full Text] [Related]
19. Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices.
Zhang F; Shi ZF; Ma ZZ; Li Y; Li S; Wu D; Xu TT; Li XJ; Shan CX; Du GT
Nanoscale; 2018 Nov; 10(43):20131-20139. PubMed ID: 30376029
[TBL] [Abstract][Full Text] [Related]
20. Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.
Jang BC; Seong H; Kim SK; Kim JY; Koo BJ; Choi J; Yang SY; Im SG; Choi SY
ACS Appl Mater Interfaces; 2016 May; 8(20):12951-8. PubMed ID: 27142537
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
