BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

529 related articles for article (PubMed ID: 28112895)

  • 21. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.
    Sun B; Zhang X; Zhou G; Yu T; Mao S; Zhu S; Zhao Y; Xia Y
    J Colloid Interface Sci; 2018 Jun; 520():19-24. PubMed ID: 29525500
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Dual-Phase CsPbBr
    Tong G; Li H; Li D; Zhu Z; Xu E; Li G; Yu L; Xu J; Jiang Y
    Small; 2018 Feb; 14(7):. PubMed ID: 29266759
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl
    Ran Q; Wang Y; Zhang W; Xu N; Chen W; Tang X
    J Phys Chem Lett; 2024 Feb; 15(6):1572-1578. PubMed ID: 38301605
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Enhanced Resistive Switching Performance through Air-Stable Cu
    Yuan Y; Wang Y; Tang X; Zhang N; Zhang W
    ACS Appl Mater Interfaces; 2022 Dec; 14(48):53990-53998. PubMed ID: 36413801
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI
    Das U; Das D; Paul B; Rabha T; Pattanayak S; Kanjilal A; Bhattacharjee S; Sarkar P; Roy A
    ACS Appl Mater Interfaces; 2020 Sep; 12(37):41718-41727. PubMed ID: 32830960
    [TBL] [Abstract][Full Text] [Related]  

  • 26. General Strategy for Rapid Production of Low-Dimensional All-Inorganic CsPbBr
    Liu W; Zheng J; Cao S; Wang L; Gao F; Chou KC; Hou X; Yang W
    Inorg Chem; 2018 Feb; 57(3):1598-1603. PubMed ID: 29363961
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Graphene oxide thin films for flexible nonvolatile memory applications.
    Jeong HY; Kim JY; Kim JW; Hwang JO; Kim JE; Lee JY; Yoon TH; Cho BJ; Kim SO; Ruoff RS; Choi SY
    Nano Lett; 2010 Nov; 10(11):4381-6. PubMed ID: 20919689
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device.
    Hsiao YW; Wang SY; Huang CL; Leu CC; Shih CF
    Nanomaterials (Basel); 2020 Jun; 10(6):. PubMed ID: 32545543
    [No Abstract]   [Full Text] [Related]  

  • 29. All-Inorganic Bismuth Halide Perovskite-Like Materials A
    Cuhadar C; Kim SG; Yang JM; Seo JY; Lee D; Park NG
    ACS Appl Mater Interfaces; 2018 Sep; 10(35):29741-29749. PubMed ID: 29968458
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Low-temperature processed inorganic perovskites for flexible detectors with a broadband photoresponse.
    Zhang T; Wang F; Zhang P; Wang Y; Chen H; Li J; Wu J; Chen L; Chen ZD; Li S
    Nanoscale; 2019 Feb; 11(6):2871-2877. PubMed ID: 30681687
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.
    Yoo EJ; Lyu M; Yun JH; Kang CJ; Choi YJ; Wang L
    Adv Mater; 2015 Oct; 27(40):6170-5. PubMed ID: 26331363
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Flexible, All-Inorganic CsPbBr
    Xu Y; Duan J; Du J; Yang X; Duan Y; Tang Q
    ChemSusChem; 2021 Mar; 14(6):1512-1516. PubMed ID: 33539047
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching.
    Wang Y; Lv Z; Liao Q; Shan H; Chen J; Zhou Y; Zhou L; Chen X; Roy VAL; Wang Z; Xu Z; Zeng YJ; Han ST
    Adv Mater; 2018 Jul; 30(28):e1800327. PubMed ID: 29782667
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects.
    Zhu X; Lee J; Lu WD
    Adv Mater; 2017 Aug; 29(29):. PubMed ID: 28582597
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Improving the Photovoltaic Performance of Flexible Solar Cells with Semitransparent Inorganic Perovskite Active Layers by Interface Engineering.
    Tan Y; Xiao B; Xu P; Luo Y; Jiang Q; Yang J
    ACS Appl Mater Interfaces; 2021 May; 13(17):20034-20042. PubMed ID: 33848134
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems.
    Siddik A; Haldar PK; Paul T; Das U; Barman A; Roy A; Sarkar PK
    Nanoscale; 2021 May; 13(19):8864-8874. PubMed ID: 33949417
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Flexible resistive random access memory devices by using NiO
    Lee K; Park JW; Tchoe Y; Yoon J; Chung K; Yoon H; Lee S; Yoon C; Ho Park B; Yi GC
    Nanotechnology; 2017 May; 28(20):205202. PubMed ID: 28303797
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Lead-free, air-stable hybrid organic-inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage.
    Hwang B; Lee JS
    Nanoscale; 2018 May; 10(18):8578-8584. PubMed ID: 29694471
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Unusual Stability and Temperature-Dependent Properties of Highly Emissive CsPbBr
    Liang P; Zhang P; Pan A; Yan K; Zhu Y; Yang M; He L
    ACS Appl Mater Interfaces; 2019 Jun; 11(25):22786-22793. PubMed ID: 31244028
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Pseudohalide-Induced 2D (CH
    Cheng XF; Hou X; Zhou J; Gao BJ; He JH; Li H; Xu QF; Li NJ; Chen DY; Lu JM
    Small; 2018 Mar; 14(12):e1703667. PubMed ID: 29457377
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 27.