These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

265 related articles for article (PubMed ID: 28116611)

  • 1. The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.
    Ding X; Qin C; Song J; Zhang J; Jiang X; Zhang Z
    Nanoscale Res Lett; 2017 Dec; 12(1):63. PubMed ID: 28116611
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors.
    Ko JB; Cho SI; Park SK
    ACS Appl Mater Interfaces; 2023 Oct; 15(40):47799-47809. PubMed ID: 37769061
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-Performance Indium Gallium Tin Oxide Transistors with an Al
    Choi CH; Kim T; Ueda S; Shiah YS; Hosono H; Kim J; Jeong JK
    ACS Appl Mater Interfaces; 2021 Jun; 13(24):28451-28461. PubMed ID: 34111928
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability.
    Saha JK; Billah MM; Jang J
    ACS Appl Mater Interfaces; 2021 Aug; 13(31):37350-37362. PubMed ID: 34325511
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Characterization of the SnO2 based thin film transistors with Ga, In and Hf doping.
    Shin SY; Moon YK; Kim WS; Lee SH; Park JW
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5459-63. PubMed ID: 22966590
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping.
    Han D; Park J; Kang M; Jeon H; Park J
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7606-10. PubMed ID: 26726382
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.
    Lin YY; Hsu CC; Tseng MH; Shyue JJ; Tsai FY
    ACS Appl Mater Interfaces; 2015 Oct; 7(40):22610-7. PubMed ID: 26436832
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.
    Li H; Han D; Liu L; Dong J; Cui G; Zhang S; Zhang X; Wang Y
    Nanoscale Res Lett; 2017 Dec; 12(1):223. PubMed ID: 28347129
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
    Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis.
    Bukke RN; Saha JK; Mude NN; Kim Y; Lee S; Jang J
    ACS Appl Mater Interfaces; 2020 Aug; 12(31):35164-35174. PubMed ID: 32657115
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
    ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.
    Sheng J; Lee HJ; Oh S; Park JS
    ACS Appl Mater Interfaces; 2016 Dec; 8(49):33821-33828. PubMed ID: 27960372
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Remarkable Stability Improvement of ZnO TFT with Al
    Saha JK; Bukke RN; Mude NN; Jang J
    Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32438551
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.
    Jeong Y; Pearson C; Kim HG; Park MY; Kim H; Do LM; Petty MC
    ACS Appl Mater Interfaces; 2016 Jan; 8(3):2061-70. PubMed ID: 26704352
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor.
    Lee D; Choi P; Park A; Jeon W; Choi D; Lee S; Choi B
    J Nanosci Nanotechnol; 2020 Nov; 20(11):6675-6678. PubMed ID: 32604495
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors.
    Hur JS; Kim JO; Kim HA; Jeong JK
    ACS Appl Mater Interfaces; 2019 Jun; 11(24):21675-21685. PubMed ID: 31124358
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
    Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
    Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Graded-Band-Gap Zinc-Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection.
    Teng J; Chen Y; Huang C; Yang M; Zhu B; Liu WJ; Ding SJ; Wu X
    ACS Appl Mater Interfaces; 2024 Feb; 16(7):9060-9067. PubMed ID: 38336611
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.