These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

193 related articles for article (PubMed ID: 28150798)

  • 1. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures.
    Janicki L; Kunert G; Sawicki M; Piskorska-Hommel E; Gas K; Jakiela R; Hommel D; Kudrawiec R
    Sci Rep; 2017 Feb; 7():41877. PubMed ID: 28150798
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Role of defect sites and Ga polarization in the magnetism of Mn-doped GaN.
    Keavney DJ; Cheung SH; King ST; Weinert M; Li L
    Phys Rev Lett; 2005 Dec; 95(25):257201. PubMed ID: 16384500
    [TBL] [Abstract][Full Text] [Related]  

  • 3. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.
    Sancho-Juan O; Cantarero A; Garro N; Cros A; Martínez-Criado G; Salomé M; Susini J; Olguín D; Dhar S
    J Phys Condens Matter; 2009 Jul; 21(29):295801. PubMed ID: 21828536
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers.
    Yastrubchak O; Tataryn N; Gluba L; Mamykin S; Sadowski J; Andrearczyk T; Domagala JZ; Kondratenko O; Romanyuk V; Fedchenko O; Lytvynenko Y; Tkach O; Vasilyev D; Babenkov S; Medjanik K; Gas K; Sawicki M; Wosinski T; Schönhense G; Elmers HJ
    Sci Rep; 2023 Oct; 13(1):17278. PubMed ID: 37828106
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy.
    Ho CH; Lee JW
    Opt Lett; 2009 Dec; 34(23):3604-6. PubMed ID: 19953134
    [TBL] [Abstract][Full Text] [Related]  

  • 6. GaN intermediate band solar cells with Mn-doped absorption layer.
    Lee ML; Huang FW; Chen PC; Sheu JK
    Sci Rep; 2018 Jun; 8(1):8641. PubMed ID: 29872117
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires.
    Aras M; Güler-Kılıç S; Kılıç Ç
    Phys Chem Chem Phys; 2020 Dec; 22(48):27987-27998. PubMed ID: 33295351
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
    Albert S; Bengoechea-Encabo A; Sánchez-García MA; Kong X; Trampert A; Calleja E
    Nanotechnology; 2013 May; 24(17):175303. PubMed ID: 23558410
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface.
    Zdanowicz E; Herman AP; Opołczyńska K; Gorantla S; Olszewski W; Serafińczuk J; Hommel D; Kudrawiec R
    ACS Appl Mater Interfaces; 2022 Feb; 14(4):6131-6137. PubMed ID: 35043636
    [TBL] [Abstract][Full Text] [Related]  

  • 10. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.
    Zhang Z; Cao R; Wang C; Li HB; Dong H; Wang WH; Lu F; Cheng Y; Xie X; Liu H; Cho K; Wallace R; Wang W
    ACS Appl Mater Interfaces; 2015 Mar; 7(9):5141-9. PubMed ID: 25639492
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.
    Souma S; Chen L; Oszwałdowski R; Sato T; Matsukura F; Dietl T; Ohno H; Takahashi T
    Sci Rep; 2016 Jun; 6():27266. PubMed ID: 27265402
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Hybrid density functional study of band alignment in ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures.
    Wang Z; Zhao M; Wang X; Xi Y; He X; Liu X; Yan S
    Phys Chem Chem Phys; 2012 Dec; 14(45):15693-8. PubMed ID: 23086201
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor.
    Sapega VF; Moreno M; Ramsteiner M; Däweritz L; Ploog KH
    Phys Rev Lett; 2005 Apr; 94(13):137401. PubMed ID: 15904032
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory.
    Tsai YC; Bayram C
    ACS Omega; 2020 Mar; 5(8):3917-3923. PubMed ID: 32149218
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band.
    Dobrowolska M; Tivakornsasithorn K; Liu X; Furdyna JK; Berciu M; Yu KM; Walukiewicz W
    Nat Mater; 2012 Feb; 11(5):444-9. PubMed ID: 22344325
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Unified mechanism of the surface Fermi level pinning in III-As nanowires.
    Alekseev PA; Dunaevskiy MS; Cirlin GE; Reznik RR; Smirnov AN; Kirilenko DA; Davydov VY; Berkovits VL
    Nanotechnology; 2018 Aug; 29(31):314003. PubMed ID: 29757753
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method.
    Fang DQ; Zhang SL
    J Chem Phys; 2016 Jan; 144(1):014704. PubMed ID: 26747815
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Hybrid functional investigation of band offsets for non-polar, Ga-polar and Al-polar interfaces in GaN/AlN heterojunction.
    Kaewmeechai C; Laosiritaworn Y; Jaroenjittichai AP
    J Phys Condens Matter; 2020 Oct; 33(3):. PubMed ID: 33017819
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Determination of the surface band bending in In
    Lozac'h M; Ueda S; Liu S; Yoshikawa H; Liwen S; Wang X; Shen B; Sakoda K; Kobayashi K; Sumiya M
    Sci Technol Adv Mater; 2013 Feb; 14(1):015007. PubMed ID: 27877565
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band.
    Scarpulla MA; Cardozo BL; Farshchi R; Oo WM; McCluskey MD; Yu KM; Dubon OD
    Phys Rev Lett; 2005 Nov; 95(20):207204. PubMed ID: 16384094
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.