These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

177 related articles for article (PubMed ID: 28178835)

  • 1. Low temperature thermal ALD of a SiN
    Edmonds M; Sardashti K; Wolf S; Chagarov E; Clemons M; Kent T; Park JH; Tang K; McIntyre PC; Yoshida N; Dong L; Holmes R; Alvarez D; Kummel AC
    J Chem Phys; 2017 Feb; 146(5):052820. PubMed ID: 28178835
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Investigate on the Mechanism of HfO
    Yao Q; Ma X; Wang H; Wang Y; Wang G; Zhang J; Liu W; Wang X; Yan J; Li Y; Wang W
    Nanomaterials (Basel); 2021 Apr; 11(4):. PubMed ID: 33918553
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces.
    Chagarov E; Sardashti K; Kaufman-Osborn T; Madisetti S; Oktyabrsky S; Sahu B; Kummel A
    ACS Appl Mater Interfaces; 2015 Dec; 7(47):26275-83. PubMed ID: 26575590
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Selective Etching of Silicon in Preference to Germanium and Si
    Ahles CF; Choi JY; Wolf S; Kummel AC
    ACS Appl Mater Interfaces; 2017 Jun; 9(24):20947-20954. PubMed ID: 28537704
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si
    Park SW; Choi JY; Siddiqui S; Sahu B; Galatage R; Yoshida N; Kachian J; Kummel AC
    J Chem Phys; 2017 Feb; 146(5):052808. PubMed ID: 28178814
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates.
    Manna S; Aluguri R; Das S; Singha R; Ray SK
    Opt Express; 2013 Nov; 21(23):28219-31. PubMed ID: 24514333
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition.
    Kavrik MS; Bostwick A; Rotenberg E; Tang K; Thomson E; Aoki T; Fruhberger B; Taur Y; McIntyre PC; Kummel AC
    J Am Chem Soc; 2020 Jan; 142(1):134-145. PubMed ID: 31779305
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.
    Edmonds M; Kent T; Chagarov E; Sardashti K; Droopad R; Chang M; Kachian J; Park JH; Kummel A
    J Am Chem Soc; 2015 Jul; 137(26):8526-33. PubMed ID: 26070022
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Ultralow Defect Density at Sub-0.5 nm HfO
    Kavrik MS; Thomson E; Chagarov E; Tang K; Ueda ST; Hou V; Aoki T; Kim M; Fruhberger B; Taur Y; McIntyre PC; Kummel AC
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30794-30802. PubMed ID: 30073827
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO
    Kavrik MS; Ercius P; Cheung J; Tang K; Wang Q; Fruhberger B; Kim M; Taur Y; McIntyre PC; Kummel AC
    ACS Appl Mater Interfaces; 2019 Apr; 11(16):15111-15121. PubMed ID: 30938163
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation.
    Chagarov EA; Porter L; Kummel AC
    J Chem Phys; 2016 Feb; 144(8):084704. PubMed ID: 26931715
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si
    Singh S; Katiyar AK; Sarkar A; Shihabudeen PK; Chaudhuri AR; Goswami DK; Ray SK
    Nanotechnology; 2020 Mar; 31(11):115206. PubMed ID: 31756729
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.
    Zhang L; Guo Y; Hassan VV; Tang K; Foad MA; Woicik JC; Pianetta P; Robertson J; McIntyre PC
    ACS Appl Mater Interfaces; 2016 Jul; 8(29):19110-8. PubMed ID: 27345195
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy.
    Zhang Z; Dillen DC; Tutuc E; Yu ET
    Nano Lett; 2015 Jul; 15(7):4303-10. PubMed ID: 26053999
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces.
    Taniguchi T; Ishibe T; Naruse N; Mera Y; Alam MM; Sawano K; Nakamura Y
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25428-25434. PubMed ID: 32427454
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.
    Choi YJ; Lim H; Lee S; Suh S; Kim JR; Jung HS; Park S; Lee JH; Kim SG; Hwang CS; Kim H
    ACS Appl Mater Interfaces; 2014 May; 6(10):7885-94. PubMed ID: 24780393
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
    Dalapati GK; Chia CK; Tan CC; Tan HR; Chiam SY; Dong JR; Das A; Chattopadhyay S; Mahata C; Maiti CK; Chi DZ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):949-57. PubMed ID: 23331503
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Atomic imaging and modeling of H2O2(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface.
    Kaufman-Osborn T; Chagarov EA; Kummel AC
    J Chem Phys; 2014 May; 140(20):204708. PubMed ID: 24880312
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.
    Kerr AJ; Chagarov E; Gu S; Kaufman-Osborn T; Madisetti S; Wu J; Asbeck PM; Oktyabrsky S; Kummel AC
    J Chem Phys; 2014 Sep; 141(10):104702. PubMed ID: 25217942
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.