These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
376 related articles for article (PubMed ID: 28195239)
1. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit. Chakrabarti B; Lastras-Montaño MA; Adam G; Prezioso M; Hoskins B; Payvand M; Madhavan A; Ghofrani A; Theogarajan L; Cheng KT; Strukov DB Sci Rep; 2017 Feb; 7():42429. PubMed ID: 28195239 [TBL] [Abstract][Full Text] [Related]
2. 3D integration of planar crossbar memristive devices with CMOS substrate. Lin P; Pi S; Xia Q Nanotechnology; 2014 Oct; 25(40):405202. PubMed ID: 25224779 [TBL] [Abstract][Full Text] [Related]
3. Thousands of conductance levels in memristors integrated on CMOS. Rao M; Tang H; Wu J; Song W; Zhang M; Yin W; Zhuo Y; Kiani F; Chen B; Jiang X; Liu H; Chen HY; Midya R; Ye F; Jiang H; Wang Z; Wu M; Hu M; Wang H; Xia Q; Ge N; Li J; Yang JJ Nature; 2023 Mar; 615(7954):823-829. PubMed ID: 36991190 [TBL] [Abstract][Full Text] [Related]
4. Corrigendum: A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit. Chakrabarti B; Lastras-Montaño MA; Adam G; Prezioso M; Hoskins B; Payvand M; Madhavan A; Ghofrani A; Theogarajan L; Cheng KT; Strukov DB Sci Rep; 2017 Jul; 7():46874. PubMed ID: 28751683 [TBL] [Abstract][Full Text] [Related]
5. Four-dimensional address topology for circuits with stacked multilayer crossbar arrays. Strukov DB; Williams RS Proc Natl Acad Sci U S A; 2009 Dec; 106(48):20155-8. PubMed ID: 19918072 [TBL] [Abstract][Full Text] [Related]
6. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Prezioso M; Merrikh-Bayat F; Hoskins BD; Adam GC; Likharev KK; Strukov DB Nature; 2015 May; 521(7550):61-4. PubMed ID: 25951284 [TBL] [Abstract][Full Text] [Related]
7. 3D CMOS/molecular hybrid circuits. Tu D; Liu M; Wang W; Haruehanroengra S J Nanosci Nanotechnol; 2009 Feb; 9(2):1015-8. PubMed ID: 19441444 [TBL] [Abstract][Full Text] [Related]
8. From Memristive Materials to Neural Networks. Guo T; Sun B; Ranjan S; Jiao Y; Wei L; Zhou YN; Wu YA ACS Appl Mater Interfaces; 2020 Dec; 12(49):54243-54265. PubMed ID: 33232112 [TBL] [Abstract][Full Text] [Related]
9. High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Alibart F; Gao L; Hoskins BD; Strukov DB Nanotechnology; 2012 Feb; 23(7):075201. PubMed ID: 22260949 [TBL] [Abstract][Full Text] [Related]
10. In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor. Vasileiadis N; Ntinas V; Sirakoulis GC; Dimitrakis P Materials (Basel); 2021 Sep; 14(18):. PubMed ID: 34576447 [TBL] [Abstract][Full Text] [Related]
12. Memristor-CMOS Hybrid Circuit for Temporal-Pooling of Sensory and Hippocampal Responses of Cortical Neurons. Nguyen TV; Pham KV; Min KS Materials (Basel); 2019 Mar; 12(6):. PubMed ID: 30875957 [TBL] [Abstract][Full Text] [Related]
13. Modeling and Experimental Demonstration of a Hopfield Network Analog-to-Digital Converter with Hybrid CMOS/Memristor Circuits. Guo X; Merrikh-Bayat F; Gao L; Hoskins BD; Alibart F; Linares-Barranco B; Theogarajan L; Teuscher C; Strukov DB Front Neurosci; 2015; 9():488. PubMed ID: 26732664 [TBL] [Abstract][Full Text] [Related]
14. Memristor-CMOS Hybrid Neuron Circuit with Nonideal-Effect Correction Related to Parasitic Resistance for Binary-Memristor-Crossbar Neural Networks. Nguyen TV; An J; Min KS Micromachines (Basel); 2021 Jul; 12(7):. PubMed ID: 34357201 [TBL] [Abstract][Full Text] [Related]
15. Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits. Hong SK; Kim CS; Hwang WS; Cho BJ ACS Nano; 2016 Jul; 10(7):7142-6. PubMed ID: 27403730 [TBL] [Abstract][Full Text] [Related]
16. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect. Li S; Zhang T Nanotechnology; 2008 May; 19(18):185202. PubMed ID: 21825686 [TBL] [Abstract][Full Text] [Related]
17. A hybrid nanomemristor/transistor logic circuit capable of self-programming. Borghetti J; Li Z; Straznicky J; Li X; Ohlberg DA; Wu W; Stewart DR; Williams RS Proc Natl Acad Sci U S A; 2009 Feb; 106(6):1699-703. PubMed ID: 19171903 [TBL] [Abstract][Full Text] [Related]