These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

144 related articles for article (PubMed ID: 28198432)

  • 1. All-nitride Al
    Capuzzo G; Kysylychyn D; Adhikari R; Li T; Faina B; Tarazaga Martín-Luengo A; Bonanni A
    Sci Rep; 2017 Feb; 7():42697. PubMed ID: 28198432
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded Al
    Lee CJ; Won CH; Lee JH; Hahm SH; Park H
    Sensors (Basel); 2017 Jul; 17(7):. PubMed ID: 28753989
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications.
    Wei B; Han Y; Wang Y; Zhao H; Sun B; Yang X; Han L; Wang M; Li Z; Xiao H; Zhang Y
    RSC Adv; 2020 Jun; 10(39):23341-23349. PubMed ID: 35520320
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances.
    Zhao L; Liu C; Wang K
    Small; 2022 Apr; 18(14):e2106757. PubMed ID: 35218296
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Sputtering AlN/In
    Long L; Li T; Hu Z; Song W; Zhang L; Wang L
    Opt Lett; 2020 Dec; 45(24):6711-6714. PubMed ID: 33325876
    [TBL] [Abstract][Full Text] [Related]  

  • 6. On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes.
    Zhang ZH; Li L; Zhang Y; Xu F; Shi Q; Shen B; Bi W
    Opt Express; 2017 Jul; 25(14):16550-16559. PubMed ID: 28789158
    [TBL] [Abstract][Full Text] [Related]  

  • 7. InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.
    Shiu GY; Chen KT; Fan FH; Huang KP; Hsu WJ; Dai JJ; Lai CF; Lin CF
    Sci Rep; 2016 Jul; 6():29138. PubMed ID: 27363290
    [TBL] [Abstract][Full Text] [Related]  

  • 8. GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors.
    Takeuchi T; Kamiyama S; Iwaya M; Akasaki I
    Rep Prog Phys; 2019 Jan; 82(1):012502. PubMed ID: 30015327
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors.
    Griffin P; Zhu T; Oliver R
    Materials (Basel); 2018 Aug; 11(9):. PubMed ID: 30134525
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
    Ryu JH; Kim HY; Kim HK; Katharria YS; Han N; Kang JH; Park YJ; Han M; Ryu BD; Ko KB; Suh EK; Hong CH
    Opt Express; 2012 Apr; 20(9):9999-10003. PubMed ID: 22535092
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width.
    Bai J; Cai Y; Feng P; Fletcher P; Zhu C; Tian Y; Wang T
    ACS Nano; 2020 Jun; 14(6):6906-6911. PubMed ID: 32453549
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Anisotropic properties of pipe-GaN distributed Bragg reflectors.
    Wu CJ; Chen YY; Wang CJ; Shiu GY; Huang CH; Liu HJ; Chen H; Lin YS; Lin CF; Han J
    Nanoscale Adv; 2020 Apr; 2(4):1726-1732. PubMed ID: 36132299
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides.
    Fu A; Gao H; Petrov P; Yang P
    Nano Lett; 2015 Oct; 15(10):6909-13. PubMed ID: 26379092
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Correlation of Multiplicity and Chemistry in Al
    Licata OG; Broderick SR; Mazumder B
    Microsc Microanal; 2020 Feb; 26(1):95-101. PubMed ID: 32014067
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.
    Zhu T; Liu Y; Ding T; Fu WY; Jarman J; Ren CX; Kumar RV; Oliver RA
    Sci Rep; 2017 Mar; 7():45344. PubMed ID: 28345612
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes.
    Waltereit P; Brandt O; Trampert A; Grahn HT; Menniger J; Ramsteiner M; Reiche M; Ploog KH
    Nature; 2000 Aug; 406(6798):865-8. PubMed ID: 10972282
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale.
    Bougerol C; Robin E; Di Russo E; Bellet-Amalric E; Grenier V; Ajay A; Rigutti L; Monroy E
    ACS Appl Mater Interfaces; 2021 Jan; 13(3):4165-4173. PubMed ID: 33449632
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Novel III-V Nitride Polymorphs in the
    Fan Q; Ai X; Zhou J; Yu X; Zhang W; Yun S
    Materials (Basel); 2020 Aug; 13(17):. PubMed ID: 32847088
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis.
    Yang Y; Shi Z; Zhang S; Ma X; Bai J; Fan D; Zang H; Sun X; Li D
    J Phys Chem Lett; 2023 Jul; 14(29):6719-6725. PubMed ID: 37470335
    [TBL] [Abstract][Full Text] [Related]  

  • 20. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
    Roccaforte F; Greco G; Fiorenza P; Iucolano F
    Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.