312 related articles for article (PubMed ID: 28262013)
1. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.
Woods KN; Chiang TH; Plassmeyer PN; Kast MG; Lygo AC; Grealish AK; Boettcher SW; Page CJ
ACS Appl Mater Interfaces; 2017 Mar; 9(12):10897-10903. PubMed ID: 28262013
[TBL] [Abstract][Full Text] [Related]
2. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.
Plassmeyer PN; Archila K; Wager JF; Page CJ
ACS Appl Mater Interfaces; 2015 Jan; 7(3):1678-84. PubMed ID: 25532438
[TBL] [Abstract][Full Text] [Related]
3. Nonuniform Composition Profiles in Amorphous Multimetal Oxide Thin Films Deposited from Aqueous Solution.
Woods KN; Thomas MC; Mitchson G; Ditto J; Xu C; Kayal D; Frisella KC; Gustafsson T; Garfunkel E; Chabal YJ; Johnson DC; Page CJ
ACS Appl Mater Interfaces; 2017 Oct; 9(42):37476-37483. PubMed ID: 28959877
[TBL] [Abstract][Full Text] [Related]
4. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
[TBL] [Abstract][Full Text] [Related]
5. High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors.
Pujar P; Madaravalli Jagadeeshkumar KK; Naqi M; Gandla S; Cho HW; Jung SH; Cho HK; Kalathi JT; Kim S
ACS Appl Mater Interfaces; 2020 Oct; 12(40):44926-44933. PubMed ID: 32897052
[TBL] [Abstract][Full Text] [Related]
6. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
[TBL] [Abstract][Full Text] [Related]
7. Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.
Byun HR; You EA; Ha YG
ACS Appl Mater Interfaces; 2017 Mar; 9(8):7347-7354. PubMed ID: 28150486
[TBL] [Abstract][Full Text] [Related]
8. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.
Zhuang J; Sun QJ; Zhou Y; Han ST; Zhou L; Yan Y; Peng H; Venkatesh S; Wu W; Li RK; Roy VA
ACS Appl Mater Interfaces; 2016 Nov; 8(45):31128-31135. PubMed ID: 27762140
[TBL] [Abstract][Full Text] [Related]
9. Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics.
Ha YG; Jeong S; Wu J; Kim MG; Dravid VP; Facchetti A; Marks TJ
J Am Chem Soc; 2010 Dec; 132(49):17426-34. PubMed ID: 21087049
[TBL] [Abstract][Full Text] [Related]
10. Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating.
Yang H; Liang Z; Fu X; Xu Z; Ning H; Liu X; Lin J; Pan Y; Yao R; Peng J
Membranes (Basel); 2021 Aug; 11(8):. PubMed ID: 34436371
[TBL] [Abstract][Full Text] [Related]
11. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK
ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390
[TBL] [Abstract][Full Text] [Related]
12. Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.
Meena JS; Chu MC; Wu CS; Ravipati S; Ko FH
J Nanosci Nanotechnol; 2011 Aug; 11(8):6858-67. PubMed ID: 22103091
[TBL] [Abstract][Full Text] [Related]
13. Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor.
Oluwabi AT; Gaspar D; Katerski A; Mere A; Krunks M; Pereira L; Oja Acik I
Materials (Basel); 2019 Dec; 13(1):. PubMed ID: 31861357
[TBL] [Abstract][Full Text] [Related]
14. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK
ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443
[TBL] [Abstract][Full Text] [Related]
15. Structural and Electrical Characterization of SiO
Esro M; Kolosov O; Jones PJ; Milne WI; Adamopoulos G
ACS Appl Mater Interfaces; 2017 Jan; 9(1):529-536. PubMed ID: 27933760
[TBL] [Abstract][Full Text] [Related]
16. Solution-processed amorphous ZrO
Seon JB; Cho NK; Yoo G; Kim YS; Char K
RSC Adv; 2018 Nov; 8(68):39115-39119. PubMed ID: 35558330
[TBL] [Abstract][Full Text] [Related]
17. Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics.
Choi J; Joo M; Seong H; Pak K; Park H; Park CW; Im SG
ACS Appl Mater Interfaces; 2017 Jun; 9(24):20808-20817. PubMed ID: 28569054
[TBL] [Abstract][Full Text] [Related]
18. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.
Branquinho R; Salgueiro D; Santos L; Barquinha P; Pereira L; Martins R; Fortunato E
ACS Appl Mater Interfaces; 2014 Nov; 6(22):19592-9. PubMed ID: 25354332
[TBL] [Abstract][Full Text] [Related]
19. Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor.
Yoon JY; Jeong S; Lee SS; Kim YH; Ka JW; Yi MH; Jang KS
ACS Appl Mater Interfaces; 2013 Jun; 5(11):5149-55. PubMed ID: 23692313
[TBL] [Abstract][Full Text] [Related]
20. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
