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4. MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device. Manna S; Aluguri R; Katiyar A; Das S; Laha A; Osten HJ; Ray SK Nanotechnology; 2013 Dec; 24(50):505709. PubMed ID: 24284782 [TBL] [Abstract][Full Text] [Related]
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