639 related articles for article (PubMed ID: 28294166)
1. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.
Hu H; Zhou S; Liu X; Gao Y; Gui C; Liu S
Sci Rep; 2017 Mar; 7():44627. PubMed ID: 28294166
[TBL] [Abstract][Full Text] [Related]
2. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer.
Oh JT; Moon YT; Kang DS; Park CK; Han JW; Jung MH; Sung YJ; Jeong HH; Song JO; Seong TY
Opt Express; 2018 Mar; 26(5):5111-5117. PubMed ID: 29529718
[TBL] [Abstract][Full Text] [Related]
3. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
Zhao J; Hu H; Lei Y; Wan H; Gong L; Zhou S
Nanomaterials (Basel); 2019 Nov; 9(11):. PubMed ID: 31744248
[TBL] [Abstract][Full Text] [Related]
4. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
[TBL] [Abstract][Full Text] [Related]
5. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
Chang HM; Lai WC; Chen WS; Chang SJ
Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
[TBL] [Abstract][Full Text] [Related]
6. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.
Lee CY; Tzou AJ; Lin BC; Lan YP; Chiu CH; Chi GC; Chen CH; Kuo HC; Lin RM; Chang CY
Nanoscale Res Lett; 2014; 9(1):505. PubMed ID: 25258616
[TBL] [Abstract][Full Text] [Related]
7. Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers.
Liu CY; Zhang YC; Xu SR; Jiang L; Zhang JC; Hao Y
Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31817364
[TBL] [Abstract][Full Text] [Related]
8. AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.
Kim KH; Lee TH; Kim TG
ACS Appl Mater Interfaces; 2017 Jul; 9(28):24357-24364. PubMed ID: 28671809
[TBL] [Abstract][Full Text] [Related]
9. Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers.
Gao Y; Xu S; Peng R; Tao H; Zhang J; Hao Y
Materials (Basel); 2020 Sep; 13(18):. PubMed ID: 32899535
[TBL] [Abstract][Full Text] [Related]
10. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.
He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860
[TBL] [Abstract][Full Text] [Related]
11. Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications.
Tran BT; Maeda N; Jo M; Inoue D; Kikitsu T; Hirayama H
Sci Rep; 2016 Nov; 6():35681. PubMed ID: 27819331
[TBL] [Abstract][Full Text] [Related]
12. Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.
Lee TH; Kim KH; Lee BR; Park JH; Schubert EF; Kim TG
ACS Appl Mater Interfaces; 2016 Dec; 8(51):35668-35677. PubMed ID: 27990816
[TBL] [Abstract][Full Text] [Related]
13. Growth of Ga
Zheng DG; Min S; Kim J; Han DP
Materials (Basel); 2023 Dec; 17(1):. PubMed ID: 38204021
[TBL] [Abstract][Full Text] [Related]
14. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
[TBL] [Abstract][Full Text] [Related]
15. Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes.
Wang Y; Li P; Zhang X; Xu S; Zhou X; Wu J; Yue W; Hao Y
Materials (Basel); 2020 Jan; 13(2):. PubMed ID: 31963566
[TBL] [Abstract][Full Text] [Related]
16. AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.
Zhao S; Lu J; Hai X; Yin X
Micromachines (Basel); 2020 Jan; 11(2):. PubMed ID: 31979274
[TBL] [Abstract][Full Text] [Related]
17. Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant.
Hsu WY; Lian YC; Wu PY; Yong WM; Sheu JK; Lin KL; Wu YS
Micromachines (Basel); 2018 Nov; 9(12):. PubMed ID: 30486267
[TBL] [Abstract][Full Text] [Related]
18. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
Musolino M; Tahraoui A; Fernández-Garrido S; Brandt O; Trampert A; Geelhaar L; Riechert H
Nanotechnology; 2015 Feb; 26(8):085605. PubMed ID: 25656795
[TBL] [Abstract][Full Text] [Related]
19. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array.
Guo W; Yang Z; Li J; Yang X; Zhang Y; Wang J; Chee KWA; Gao P; Ye J
Nanoscale; 2017 Oct; 9(40):15477-15483. PubMed ID: 28976517
[TBL] [Abstract][Full Text] [Related]
20. Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.
Yu CT; Lai WC; Yen CH; Chang SJ
Opt Express; 2014 May; 22 Suppl 3():A663-70. PubMed ID: 24922374
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
