205 related articles for article (PubMed ID: 28314362)
1. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.
Li W; Liu H; Wang S; Chen S; Yang Z
Nanoscale Res Lett; 2017 Dec; 12(1):198. PubMed ID: 28314362
[TBL] [Abstract][Full Text] [Related]
2. A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing.
Li W; Jia Q; Pan Y; Chen X; Yin Y; Wu Y; Wang Y; Wen Y; Wang C; Wang S
Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34153962
[TBL] [Abstract][Full Text] [Related]
3. Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance.
Chen Q; Sun R; Miao R; Liu H; Yang L; Qi Z; He W; Li J
Micromachines (Basel); 2023 Mar; 14(4):. PubMed ID: 37421017
[TBL] [Abstract][Full Text] [Related]
4. F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application.
Yun S; Oh J; Kang S; Kim Y; Kim JH; Kim G; Kim S
Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31717540
[TBL] [Abstract][Full Text] [Related]
5. A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance.
Chen S; Wang S; Liu H; Han T; Xie H; Chong C
Nanoscale Res Lett; 2020 Oct; 15(1):202. PubMed ID: 33068207
[TBL] [Abstract][Full Text] [Related]
6. A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction.
Chen S; Wang S; Liu H; Han T; Zhang H
Nanotechnology; 2022 Mar; 33(22):. PubMed ID: 35180714
[TBL] [Abstract][Full Text] [Related]
7. Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET).
Seo JH; Yoon YJ; Kang IM
J Nanosci Nanotechnol; 2018 Sep; 18(9):6602-6605. PubMed ID: 29677842
[TBL] [Abstract][Full Text] [Related]
8. Study of a Gate-Engineered Vertical TFET with GaSb/GaAs
Xie H; Chen Y; Liu H; Guo D
Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33804142
[TBL] [Abstract][Full Text] [Related]
9. Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
Chen S; Liu H; Wang S; Li W; Wang X; Zhao L
Nanoscale Res Lett; 2018 Oct; 13(1):321. PubMed ID: 30315380
[TBL] [Abstract][Full Text] [Related]
10. High performance tunnel field-effect transistor by gate and source engineering.
Huang R; Huang Q; Chen S; Wu C; Wang J; An X; Wang Y
Nanotechnology; 2014 Dec; 25(50):505201. PubMed ID: 25427134
[TBL] [Abstract][Full Text] [Related]
11. Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor.
Singh S; Agnihotri SK; Bagga N; Samajdar DP
ACS Appl Bio Mater; 2024 Feb; 7(2):812-826. PubMed ID: 38230896
[TBL] [Abstract][Full Text] [Related]
12. Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.
Lu H; Lu B; Zhang Y; Zhang Y; Lv Z
Nanomaterials (Basel); 2019 Feb; 9(2):. PubMed ID: 30717154
[TBL] [Abstract][Full Text] [Related]
13. Design Optimization of InGaAs/GaAsSb-Based
Kim BG; Seo JH; Yoon YJ; Cho MS; Kang IM
J Nanosci Nanotechnol; 2019 Oct; 19(10):6762-6766. PubMed ID: 31027025
[TBL] [Abstract][Full Text] [Related]
14. The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability.
Ferhati H; Djeffal F; Bentrcia T
Beilstein J Nanotechnol; 2018; 9():1856-1862. PubMed ID: 30013879
[TBL] [Abstract][Full Text] [Related]
15. Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs.
Seo JH; Yoon YJ; Cho S; Kang IM; Lee JH
J Nanosci Nanotechnol; 2019 Oct; 19(10):6070-6076. PubMed ID: 31026910
[TBL] [Abstract][Full Text] [Related]
16. Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor.
Kim JH; Kim HW; Song YS; Kim S; Kim G
Micromachines (Basel); 2020 Aug; 11(8):. PubMed ID: 32824238
[TBL] [Abstract][Full Text] [Related]
17. Electrical Characteristics of Ge/Si-Based Source Pocket Tunnel Field-Effect Transistors.
Ahn TJ; Yu YS
J Nanosci Nanotechnol; 2018 Sep; 18(9):5887-5892. PubMed ID: 29677711
[TBL] [Abstract][Full Text] [Related]
18. A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.
Han K; Long S; Deng Z; Zhang Y; Li J
Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028719
[TBL] [Abstract][Full Text] [Related]
19. Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET.
Yang Z; Yang Y; Yu N; Liou JJ
Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30545073
[TBL] [Abstract][Full Text] [Related]
20. I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High
Lee R; Lee J; Lee K; Kim S; Kim S; Kim S; Park BG
J Nanosci Nanotechnol; 2020 Jul; 20(7):4298-4302. PubMed ID: 31968461
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]