These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

224 related articles for article (PubMed ID: 28345641)

  • 1. III-nitride core-shell nanorod array on quartz substrates.
    Bae SY; Min JW; Hwang HY; Lekhal K; Lee HJ; Jho YD; Lee DS; Lee YT; Ikarashi N; Honda Y; Amano H
    Sci Rep; 2017 Mar; 7():45345. PubMed ID: 28345641
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.
    Jung BO; Bae SY; Lee S; Kim SY; Lee JY; Honda Y; Amano H
    Nanoscale Res Lett; 2016 Dec; 11(1):215. PubMed ID: 27102904
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.
    Hong YJ; Kim YJ; Jeon JM; Kim M; Choi JH; Baik CW; Kim SI; Park SS; Kim JM; Yi GC
    Nanotechnology; 2011 May; 22(20):205602. PubMed ID: 21444965
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics.
    Pradhan BK; Tyagi P; Pal S; Mauraya AK; Roopa ; Aggarwal V; Pal P; Kushvaha SS; Muthusamy SK
    ACS Appl Mater Interfaces; 2024 Mar; 16(10):13178-13190. PubMed ID: 38427781
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Nanoscopic Insights into InGaN/GaN Core-Shell Nanorods: Structure, Composition, and Luminescence.
    Müller M; Veit P; Krause FF; Schimpke T; Metzner S; Bertram F; Mehrtens T; Müller-Caspary K; Avramescu A; Strassburg M; Rosenauer A; Christen J
    Nano Lett; 2016 Sep; 16(9):5340-6. PubMed ID: 27517307
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition.
    Song J; Leung B; Zhang Y; Han J
    Nanotechnology; 2014 Jun; 25(22):225602. PubMed ID: 24807561
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate.
    Kuo SY; Chen WC; Lai FI; Lin WT; Wang HY; Hsiao CN
    J Nanosci Nanotechnol; 2012 Feb; 12(2):1620-3. PubMed ID: 22630014
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Cathodoluminescence spectra of gallium nitride nanorods.
    Tsai CC; Li GH; Lin YT; Chang CW; Wadekar P; Chen QY; Rigutti L; Tchernycheva M; Julien FH; Tu LW
    Nanoscale Res Lett; 2011 Dec; 6(1):631. PubMed ID: 22168896
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil.
    Ramesh C; Tyagi P; Kaswan J; Yadav BS; Shukla AK; Senthil Kumar M; Kushvaha SS
    RSC Adv; 2020 Jan; 10(4):2113-2122. PubMed ID: 35494595
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods.
    Figge S; Aschenbrenner T; Kruse C; Kunert G; Schowalter M; Rosenauer A; Hommel D
    Nanotechnology; 2011 Jan; 22(2):025603. PubMed ID: 21139192
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods.
    Tessarek C; Rechberger S; Dieker C; Heilmann M; Spiecker E; Christiansen S
    Nanotechnology; 2017 Dec; 28(48):485601. PubMed ID: 29105645
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy.
    Nami M; Eller RF; Okur S; Rishinaramangalam AK; Liu S; Brener I; Feezell DF
    Nanotechnology; 2017 Jan; 28(2):025202. PubMed ID: 27905321
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN.
    Pasayat SS; Gupta C; Wang Y; DenBaars SP; Nakamura S; Keller S; Mishra UK
    Materials (Basel); 2020 Jan; 13(1):. PubMed ID: 31947918
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Band engineered epitaxial 3D GaN-InGaN core-shell rod arrays as an advanced photoanode for visible-light-driven water splitting.
    Caccamo L; Hartmann J; Fàbrega C; Estradé S; Lilienkamp G; Prades JD; Hoffmann MW; Ledig J; Wagner A; Wang X; Lopez-Conesa L; Peiró F; Rebled JM; Wehmann HH; Daum W; Shen H; Waag A
    ACS Appl Mater Interfaces; 2014 Feb; 6(4):2235-40. PubMed ID: 24517402
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts.
    Ha R; Kim SW; Choi HJ
    Nanoscale Res Lett; 2013 Jun; 8(1):299. PubMed ID: 23803283
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.
    Kang S; Mandal A; Chu JH; Park JH; Kwon SY; Lee CR
    Sci Rep; 2015 Jun; 5():10808. PubMed ID: 26028318
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.
    Wang W; Wang H; Yang W; Zhu Y; Li G
    Sci Rep; 2016 Apr; 6():24448. PubMed ID: 27101930
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.
    Heilmann M; Munshi AM; Sarau G; Göbelt M; Tessarek C; Fauske VT; van Helvoort AT; Yang J; Latzel M; Hoffmann B; Conibeer G; Weman H; Christiansen S
    Nano Lett; 2016 Jun; 16(6):3524-32. PubMed ID: 27124605
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.
    Bergbauer W; Strassburg M; Kölper Ch; Linder N; Roder C; Lähnemann J; Trampert A; Fündling S; Li SF; Wehmann HH; Waag A
    Nanotechnology; 2010 Jul; 21(30):305201. PubMed ID: 20603534
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.