These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
208 related articles for article (PubMed ID: 28358116)
1. Work Function Tuning in Two-Dimensional MoS Baik SS; Im S; Choi HJ Sci Rep; 2017 Mar; 7():45546. PubMed ID: 28358116 [TBL] [Abstract][Full Text] [Related]
2. Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures. Zan W; Geng W; Liu H; Yao X Phys Chem Chem Phys; 2016 Jan; 18(4):3159-64. PubMed ID: 26742838 [TBL] [Abstract][Full Text] [Related]
10. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene. Amani M; Burke RA; Proie RM; Dubey M Nanotechnology; 2015 Mar; 26(11):115202. PubMed ID: 25709100 [TBL] [Abstract][Full Text] [Related]
11. Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor. Mills EM; Min BK; Kim SK; Kim SJ; Kang MA; Song W; Myung S; Lim J; An KS; Jung J; Kim S ACS Appl Mater Interfaces; 2015 Aug; 7(33):18300-5. PubMed ID: 26192754 [TBL] [Abstract][Full Text] [Related]
12. Controlling electronic properties of MoS Hua X; Ma X; Hu J; He H; Xu G; Huang C; Chen X Phys Chem Chem Phys; 2018 Jan; 20(3):1974-1983. PubMed ID: 29299566 [TBL] [Abstract][Full Text] [Related]
14. Field-effect transistors built from all two-dimensional material components. Roy T; Tosun M; Kang JS; Sachid AB; Desai SB; Hettick M; Hu CC; Javey A ACS Nano; 2014 Jun; 8(6):6259-64. PubMed ID: 24779528 [TBL] [Abstract][Full Text] [Related]
15. MoS 2 MoS2: choice substrate for accessing and tuning the electronic properties of graphene. Lu CP; Li G; Watanabe K; Taniguchi T; Andrei EY Phys Rev Lett; 2014 Oct; 113(15):156804. PubMed ID: 25375733 [TBL] [Abstract][Full Text] [Related]
16. Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation. Shih CJ; Wang QH; Son Y; Jin Z; Blankschtein D; Strano MS ACS Nano; 2014 Jun; 8(6):5790-8. PubMed ID: 24824139 [TBL] [Abstract][Full Text] [Related]
17. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. Liu H; Si M; Deng Y; Neal AT; Du Y; Najmaei S; Ajayan PM; Lou J; Ye PD ACS Nano; 2014 Jan; 8(1):1031-8. PubMed ID: 24351134 [TBL] [Abstract][Full Text] [Related]
18. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage. Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892 [TBL] [Abstract][Full Text] [Related]
19. Band offset and negative compressibility in graphene-MoS2 heterostructures. Larentis S; Tolsma JR; Fallahazad B; Dillen DC; Kim K; MacDonald AH; Tutuc E Nano Lett; 2014; 14(4):2039-45. PubMed ID: 24611616 [TBL] [Abstract][Full Text] [Related]