224 related articles for article (PubMed ID: 28393845)
1. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.
Anyebe EA; Sandall I; Jin ZM; Sanchez AM; Rajpalke MK; Veal TD; Cao YC; Li HD; Harvey R; Zhuang QD
Sci Rep; 2017 Apr; 7():46110. PubMed ID: 28393845
[TBL] [Abstract][Full Text] [Related]
2. Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.
Anyebe EA; Sanchez AM; Hindmarsh S; Chen X; Shao J; Rajpalke MK; Veal TD; Robinson BJ; Kolosov O; Anderson F; Sundaram R; Wang ZM; Falko V; Zhuang Q
Nano Lett; 2015 Jul; 15(7):4348-55. PubMed ID: 26086785
[TBL] [Abstract][Full Text] [Related]
3. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy.
Liu L; Wen L; He F; Zhuo R; Pan D; Zhao J
Nanotechnology; 2023 Nov; 35(6):. PubMed ID: 37944189
[TBL] [Abstract][Full Text] [Related]
4. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires.
Xu T; Wang H; Chen X; Luo M; Zhang L; Wang Y; Chen F; Shan C; Yu C
Nanotechnology; 2020 May; 31(29):294004. PubMed ID: 32235081
[TBL] [Abstract][Full Text] [Related]
5. Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.
Ghalamestani SG; Johansson S; Borg BM; Lind E; Dick KA; Wernersson LE
Nanotechnology; 2012 Jan; 23(1):015302. PubMed ID: 22155896
[TBL] [Abstract][Full Text] [Related]
6. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy.
Zhuang QD; Anyebe EA; Sanchez AM; Rajpalke MK; Veal TD; Zhukov A; Robinson BJ; Anderson F; Kolosov O; Fal'ko V
Nanoscale Res Lett; 2014; 9(1):321. PubMed ID: 25024683
[TBL] [Abstract][Full Text] [Related]
7. Ag-catalyzed InAs nanowires grown on transferable graphite flakes.
Meyer-Holdt J; Kanne T; Sestoft JE; Gejl A; Zeng L; Johnson E; Olsson E; Nygård J; Krogstrup P
Nanotechnology; 2016 Sep; 27(36):365603. PubMed ID: 27479073
[TBL] [Abstract][Full Text] [Related]
8. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag-In alloy segregation.
Liu L; Pan D; Wen L; Zhuo R; Zhao J
Nanotechnology; 2023 Mar; 34(22):. PubMed ID: 36827703
[TBL] [Abstract][Full Text] [Related]
9. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
Munshi AM; Dheeraj DL; Fauske VT; Kim DC; van Helvoort AT; Fimland BO; Weman H
Nano Lett; 2012 Sep; 12(9):4570-6. PubMed ID: 22889019
[TBL] [Abstract][Full Text] [Related]
10. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
Koblmüller G; Hertenberger S; Vizbaras K; Bichler M; Bao F; Zhang JP; Abstreiter G
Nanotechnology; 2010 Sep; 21(36):365602. PubMed ID: 20702932
[TBL] [Abstract][Full Text] [Related]
11. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
So H; Pan D; Li L; Zhao J
Nanotechnology; 2017 Mar; 28(13):135704. PubMed ID: 28256450
[TBL] [Abstract][Full Text] [Related]
12. InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.
Li Z; Azimi Z; Li Z; Yu Y; Huang L; Jin W; Tan HH; Jagadish C; Wong-Leung J; Fu L
Nanoscale; 2023 Jun; 15(23):10033-10041. PubMed ID: 37248736
[TBL] [Abstract][Full Text] [Related]
13. High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.
Miao J; Hu W; Guo N; Lu Z; Liu X; Liao L; Chen P; Jiang T; Wu S; Ho JC; Wang L; Chen X; Lu W
Small; 2015 Feb; 11(8):936-42. PubMed ID: 25363206
[TBL] [Abstract][Full Text] [Related]
14. Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates.
Khayrudinov V; Remennyi M; Raj V; Alekseev P; Matveev B; Lipsanen H; Haggren T
ACS Nano; 2020 Jun; 14(6):7484-7491. PubMed ID: 32437132
[TBL] [Abstract][Full Text] [Related]
15. III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs.
Haggren T; Khayrudinov V; Dhaka V; Jiang H; Shah A; Kim M; Lipsanen H
Sci Rep; 2018 Apr; 8(1):6410. PubMed ID: 29686418
[TBL] [Abstract][Full Text] [Related]
16. Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices.
Hong YJ; Fukui T
ACS Nano; 2011 Sep; 5(9):7576-84. PubMed ID: 21838312
[TBL] [Abstract][Full Text] [Related]
17. Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition.
Vilasam AGS; Adhikari S; Gupta B; Balendhran S; Higashitarumizu N; Tournet J; Li L; Javey A; Crozier KB; Karuturi S; Jagadish C; Tan HH
Nanotechnology; 2023 Sep; 34(49):. PubMed ID: 37625398
[TBL] [Abstract][Full Text] [Related]
18. Self-Catalyzed InSb/InAs Quantum Dot Nanowires.
Arif O; Zannier V; Rossi F; Ercolani D; Beltram F; Sorba L
Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33450840
[TBL] [Abstract][Full Text] [Related]
19. Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates.
Wallentin J; Kriegner D; Stangl J; Borgström MT
Nano Lett; 2014; 14(4):1707-13. PubMed ID: 24592968
[TBL] [Abstract][Full Text] [Related]
20. Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures
Baboli MA; Abrand A; Burke RA; Fedorenko A; Wilhelm TS; Polly SJ; Dubey M; Hubbard SM; Mohseni PK
Nanoscale Adv; 2021 May; 3(10):2802-2811. PubMed ID: 36134188
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
