These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
127 related articles for article (PubMed ID: 28401603)
1. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping. Tan WC; Cai Y; Ng RJ; Huang L; Feng X; Zhang G; Zhang YW; Nijhuis CA; Liu X; Ang KW Adv Mater; 2017 Jun; 29(24):. PubMed ID: 28401603 [TBL] [Abstract][Full Text] [Related]
2. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Buscema M; Groenendijk DJ; Blanter SI; Steele GA; van der Zant HS; Castellanos-Gomez A Nano Lett; 2014 Jun; 14(6):3347-52. PubMed ID: 24821381 [TBL] [Abstract][Full Text] [Related]
3. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance. Chang HM; Charnas A; Lin YM; Ye PD; Wu CI; Wu CH Sci Rep; 2017 Dec; 7(1):16857. PubMed ID: 29203831 [TBL] [Abstract][Full Text] [Related]
5. Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms. Koenig SP; Doganov RA; Seixas L; Carvalho A; Tan JY; Watanabe K; Taniguchi T; Yakovlev N; Castro Neto AH; Özyilmaz B Nano Lett; 2016 Apr; 16(4):2145-51. PubMed ID: 26938106 [TBL] [Abstract][Full Text] [Related]
6. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts. Ma Y; Shen C; Zhang A; Chen L; Liu Y; Chen J; Liu Q; Li Z; Amer MR; Nilges T; Abbas AN; Zhou C ACS Nano; 2017 Jul; 11(7):7126-7133. PubMed ID: 28653827 [TBL] [Abstract][Full Text] [Related]
7. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier. Ling ZP; Sakar S; Mathew S; Zhu JT; Gopinadhan K; Venkatesan T; Ang KW Sci Rep; 2015 Dec; 5():18000. PubMed ID: 26667402 [TBL] [Abstract][Full Text] [Related]
8. Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts. Park H; Kim J Phys Chem Chem Phys; 2018 Sep; 20(35):22439-22444. PubMed ID: 30062335 [TBL] [Abstract][Full Text] [Related]
9. Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping. Prakash A; Cai Y; Zhang G; Zhang YW; Ang KW Small; 2017 Feb; 13(5):. PubMed ID: 27862963 [TBL] [Abstract][Full Text] [Related]
10. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature. Liu X; Ang KW; Yu W; He J; Feng X; Liu Q; Jiang H; Dan Tang ; Wen J; Lu Y; Liu W; Cao P; Han S; Wu J; Liu W; Wang X; Zhu D; He Z Sci Rep; 2016 Apr; 6():24920. PubMed ID: 27102711 [TBL] [Abstract][Full Text] [Related]
11. Surface Functionalization of Black Phosphorus via Potassium toward High-Performance Complementary Devices. Han C; Hu Z; Gomes LC; Bao Y; Carvalho A; Tan SJR; Lei B; Xiang D; Wu J; Qi D; Wang L; Huo F; Huang W; Loh KP; Chen W Nano Lett; 2017 Jul; 17(7):4122-4129. PubMed ID: 28627894 [TBL] [Abstract][Full Text] [Related]
12. Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance. Guo Z; Chen S; Wang Z; Yang Z; Liu F; Xu Y; Wang J; Yi Y; Zhang H; Liao L; Chu PK; Yu XF Adv Mater; 2017 Nov; 29(42):. PubMed ID: 28960515 [TBL] [Abstract][Full Text] [Related]
13. A Black Phosphorus Carbide Infrared Phototransistor. Tan WC; Huang L; Ng RJ; Wang L; Hasan DMN; Duffin TJ; Kumar KS; Nijhuis CA; Lee C; Ang KW Adv Mater; 2018 Feb; 30(6):. PubMed ID: 29266512 [TBL] [Abstract][Full Text] [Related]
14. Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure. Ding YM; Shi JJ; Xia C; Zhang M; Du J; Huang P; Wu M; Wang H; Cen YL; Pan SH Nanoscale; 2017 Oct; 9(38):14682-14689. PubMed ID: 28944803 [TBL] [Abstract][Full Text] [Related]
15. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts. Wang CH; Incorvia JAC; McClellan CJ; Yu AC; Mleczko MJ; Pop E; Wong HP Nano Lett; 2018 May; 18(5):2822-2827. PubMed ID: 29620900 [TBL] [Abstract][Full Text] [Related]
16. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus. Xiang D; Han C; Wu J; Zhong S; Liu Y; Lin J; Zhang XA; Ping Hu W; Özyilmaz B; Neto AH; Wee AT; Chen W Nat Commun; 2015 Mar; 6():6485. PubMed ID: 25761440 [TBL] [Abstract][Full Text] [Related]
17. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. Liu H; Neal AT; Zhu Z; Luo Z; Xu X; Tománek D; Ye PD ACS Nano; 2014 Apr; 8(4):4033-41. PubMed ID: 24655084 [TBL] [Abstract][Full Text] [Related]
18. Black phosphorus field-effect transistors. Li L; Yu Y; Ye GJ; Ge Q; Ou X; Wu H; Feng D; Chen XH; Zhang Y Nat Nanotechnol; 2014 May; 9(5):372-7. PubMed ID: 24584274 [TBL] [Abstract][Full Text] [Related]
19. Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors. Zhang Z; Li L; Horng J; Wang NZ; Yang F; Yu Y; Zhang Y; Chen G; Watanabe K; Taniguchi T; Chen XH; Wang F; Zhang Y Nano Lett; 2017 Oct; 17(10):6097-6103. PubMed ID: 28853900 [TBL] [Abstract][Full Text] [Related]
20. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. Wang G; Bao L; Pei T; Ma R; Zhang YY; Sun L; Zhang G; Yang H; Li J; Gu C; Du S; Pantelides ST; Schrimpf RD; Gao HJ Nano Lett; 2016 Nov; 16(11):6870-6878. PubMed ID: 27786486 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]