These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

101 related articles for article (PubMed ID: 28408744)

  • 1. Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition.
    Cheng PH; Wang CY; Chang TJ; Shen TH; Cai YS; Chen MJ
    Sci Rep; 2017 Apr; 7(1):875. PubMed ID: 28408744
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Doped bottom-contact organic field-effect transistors.
    Liu S; Billig P; Al-Shadeedi A; Kaphle V; Lüssem B
    Nanotechnology; 2018 Jul; 29(28):284001. PubMed ID: 29570095
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dots.
    Xiu F; Wang Y; Kim J; Upadhyaya P; Zhou Y; Kou X; Han W; Kawakami RK; Zou J; Wang KL
    ACS Nano; 2010 Aug; 4(8):4948-54. PubMed ID: 20666361
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Electrostatic versus Electrochemical Doping and Control of Ferromagnetism in Ion-Gel-Gated Ultrathin La0.5Sr0.5CoO3-δ.
    Walter J; Wang H; Luo B; Frisbie CD; Leighton C
    ACS Nano; 2016 Aug; 10(8):7799-810. PubMed ID: 27479878
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Why In
    Si M; Hu Y; Lin Z; Sun X; Charnas A; Zheng D; Lyu X; Wang H; Cho K; Ye PD
    Nano Lett; 2021 Jan; 21(1):500-506. PubMed ID: 33372788
    [TBL] [Abstract][Full Text] [Related]  

  • 6. One dimensional transport in silicon nanowire junction-less field effect transistors.
    Mirza MM; Schupp FJ; Mol JA; MacLaren DA; Briggs GAD; Paul DJ
    Sci Rep; 2017 Jun; 7(1):3004. PubMed ID: 28592820
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Large electric field effect in electrolyte-gated manganites.
    Dhoot AS; Israel C; Moya X; Mathur ND; Friend RH
    Phys Rev Lett; 2009 Apr; 102(13):136402. PubMed ID: 19392377
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of geometric nanostructures on the absorption edges of 1-D and 2-D TiO₂ fabricated by atomic layer deposition.
    Chang YH; Liu CM; Cheng HE; Chen C
    ACS Appl Mater Interfaces; 2013 May; 5(9):3549-55. PubMed ID: 23621320
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering.
    Hao Y; Chen X; Zhang L; Han MG; Wang W; Fang YW; Chen H; Zhu Y; Hong X
    Nat Commun; 2023 Dec; 14(1):8247. PubMed ID: 38086833
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors.
    Grillo A; Di Bartolomeo A; Urban F; Passacantando M; Caridad JM; Sun J; Camilli L
    ACS Appl Mater Interfaces; 2020 Mar; 12(11):12998-13004. PubMed ID: 32100522
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effects of absorbed hydrogen on the electronic properties of (Zr2Fe)(1-x)H(x) metallic glasses.
    Novak M; Kokanović I
    J Phys Condens Matter; 2012 Jun; 24(23):235701. PubMed ID: 22551780
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Surface depletion induced quantum confinement in CdS nanobelts.
    Li D; Zhang J; Xiong Q
    ACS Nano; 2012 Jun; 6(6):5283-90. PubMed ID: 22577846
    [TBL] [Abstract][Full Text] [Related]  

  • 13. A proposed confinement modulated gap nanowire transistor based on a metal (tin).
    Ansari L; Fagas G; Colinge JP; Greer JC
    Nano Lett; 2012 May; 12(5):2222-7. PubMed ID: 22500745
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure.
    Kim JI; Ji KH; Jang M; Yang H; Choi R; Jeong JK
    ACS Appl Mater Interfaces; 2011 Jul; 3(7):2522-8. PubMed ID: 21663320
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.
    McKibbin SR; Scappucci G; Pok W; Simmons MY
    Nanotechnology; 2013 Feb; 24(4):045303. PubMed ID: 23291418
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.
    Ke C; Zhu W; Zhang Z; Soon Tok E; Ling B; Pan J
    Sci Rep; 2015 Nov; 5():17424. PubMed ID: 26616286
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors.
    Dhoot AS; Yuen JD; Heeney M; McCulloch I; Moses D; Heeger AJ
    Proc Natl Acad Sci U S A; 2006 Aug; 103(32):11834-7. PubMed ID: 16873547
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Nanocomposite indium tin oxide thin films: formation induced by a large oxygen deficiency and properties.
    Nistor M; Perrière J; Hebert C; Seiler W
    J Phys Condens Matter; 2010 Feb; 22(4):045006. PubMed ID: 21386308
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Room-temperature quantum confinement effects in transport properties of ultrathin Si nanowire field-effect transistors.
    Yi KS; Trivedi K; Floresca HC; Yuk H; Hu W; Kim MJ
    Nano Lett; 2011 Dec; 11(12):5465-70. PubMed ID: 22112200
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon.
    Shamim S; Weber B; Thompson DW; Simmons MY; Ghosh A
    Nano Lett; 2016 Sep; 16(9):5779-84. PubMed ID: 27525390
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.