These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

163 related articles for article (PubMed ID: 28410556)

  • 1. Electronic Structure and Charge-Trapping Characteristics of the Al
    Xu W; Zhang Y; Tang Z; Shao Z; Zhou G; Qin M; Zeng M; Wu S; Zhang Z; Gao J; Lu X; Liu J
    Nanoscale Res Lett; 2017 Dec; 12(1):270. PubMed ID: 28410556
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO
    Spassov D; Paskaleva A; Guziewicz E; Wozniak W; Stanchev T; Ivanov T; Wojewoda-Budka J; Janusz-Skuza M
    Materials (Basel); 2022 Sep; 15(18):. PubMed ID: 36143596
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Fabrication of Sn@Al
    Yoon JH
    Materials (Basel); 2019 Sep; 12(19):. PubMed ID: 31554285
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Tunable charge-trap memory based on few-layer MoS2.
    Zhang E; Wang W; Zhang C; Jin Y; Zhu G; Sun Q; Zhang DW; Zhou P; Xiu F
    ACS Nano; 2015 Jan; 9(1):612-9. PubMed ID: 25496773
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Hf-based high-k materials for Si nanocrystal floating gate memories.
    Khomenkova L; Sahu BS; Slaoui A; Gourbilleau F
    Nanoscale Res Lett; 2011 Feb; 6(1):172. PubMed ID: 21711676
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers.
    Yan C; Wen J; Lin P; Sun Z
    Small; 2019 Jan; 15(1):e1804156. PubMed ID: 30480357
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices.
    El-Atab N; Gamze Ulusoy T; Ghobadi A; Suh J; Islam R; Okyay AK; Saraswat K; Nayfeh A
    Nanotechnology; 2017 Nov; 28(44):445201. PubMed ID: 28832335
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ta
    Wei CY; Shen B; Ding P; Han P; Li AD; Xia YD; Xu B; Yin J; Liu ZG
    Sci Rep; 2017 Jul; 7(1):5988. PubMed ID: 28729693
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Charge trap memory based on few-layer black phosphorus.
    Feng Q; Yan F; Luo W; Wang K
    Nanoscale; 2016 Feb; 8(5):2686-92. PubMed ID: 26758336
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Retention Enhancement in Low Power NOR Flash Array with High-κ-Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide.
    Song YS; Park BG
    Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33808915
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Charge-trapping characteristics of Al2O3/Cu/Al2O3 nanolaminate structures prepared through atomic layer deposition.
    Lee BK; Kim SH; Park BK; Lee SS; Hwang JH; Chung TM; Lee YK; Kim CG; An KS
    J Nanosci Nanotechnol; 2011 Jul; 11(7):5887-91. PubMed ID: 22121626
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A Gd-doped HfO
    Shen Y; Zhang Z; Zhang Q; Wei F; Yin H; Wei Q; Men K
    RSC Adv; 2020 Feb; 10(13):7812-7816. PubMed ID: 35492147
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
    Dalapati GK; Chia CK; Tan CC; Tan HR; Chiam SY; Dong JR; Das A; Chattopadhyay S; Mahata C; Maiti CK; Chi DZ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):949-57. PubMed ID: 23331503
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
    Park JH; Shin MH; Yi JS
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layer.
    Chiang KC; Hsieh TE
    Nanotechnology; 2012 Jun; 23(22):225703. PubMed ID: 22571872
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices.
    Chiang KC; Hsieh TE
    Nanotechnology; 2010 Oct; 21(42):425204. PubMed ID: 20858935
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO
    Spassov D; Paskaleva A
    Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686963
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Fabrication and characterization of twin poly-Si thin film transistors EEPROM with a nitride charge trapping layer.
    Hung MF; Wu YC; Chiang JH; Chen JH; Chen LC
    J Nanosci Nanotechnol; 2011 Dec; 11(12):10419-23. PubMed ID: 22408918
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO
    Spassov D; Paskaleva A; Guziewicz E; Davidović V; Stanković S; Djorić-Veljković S; Ivanov T; Stanchev T; Stojadinović N
    Materials (Basel); 2021 Feb; 14(4):. PubMed ID: 33578892
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nb₂O₅ and Ti-Doped Nb₂O₅ Charge Trapping Nano-Layers Applied in Flash Memory.
    Wang JC; Kao CH; Wu CH; Lin CF; Lin CJ
    Nanomaterials (Basel); 2018 Oct; 8(10):. PubMed ID: 30297613
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.