These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

195 related articles for article (PubMed ID: 28417593)

  • 1. Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.
    Cooper D; Baeumer C; Bernier N; Marchewka A; La Torre C; Dunin-Borkowski RE; Menzel S; Waser R; Dittmann R
    Adv Mater; 2017 Jun; 29(23):. PubMed ID: 28417593
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO
    Zhang H; Yoo S; Menzel S; Funck C; Cüppers F; Wouters DJ; Hwang CS; Waser R; Hoffmann-Eifert S
    ACS Appl Mater Interfaces; 2018 Sep; 10(35):29766-29778. PubMed ID: 30088755
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Impact of oxygen exchange reaction at the ohmic interface in Ta
    Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
    Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Topotactic Phase Transition Driving Memristive Behavior.
    Nallagatla VR; Heisig T; Baeumer C; Feyer V; Jugovac M; Zamborlini G; Schneider CM; Waser R; Kim M; Jung CU; Dittmann R
    Adv Mater; 2019 Oct; 31(40):e1903391. PubMed ID: 31441160
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories.
    Chen S; Valov I
    Adv Mater; 2022 Jan; 34(3):e2105022. PubMed ID: 34695257
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Roles of conducting filament and non-filament regions in the Ta
    Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
    Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Nanoscale resistive switching devices: mechanisms and modeling.
    Yang Y; Lu W
    Nanoscale; 2013 Nov; 5(21):10076-92. PubMed ID: 24057010
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.
    Banerjee W; Maikap S; Lai CS; Chen YY; Tien TC; Lee HY; Chen WS; Chen FT; Kao MJ; Tsai MJ; Yang JR
    Nanoscale Res Lett; 2012 Mar; 7(1):194. PubMed ID: 22439604
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules.
    Heisig T; Baeumer C; Gries UN; Mueller MP; La Torre C; Luebben M; Raab N; Du H; Menzel S; Mueller DN; Jia CL; Mayer J; Waser R; Valov I; De Souza RA; Dittmann R
    Adv Mater; 2018 Jun; ():e1800957. PubMed ID: 29882270
    [TBL] [Abstract][Full Text] [Related]  

  • 10. In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface.
    Baek K; Park S; Park J; Kim YM; Hwang H; Oh SH
    Nanoscale; 2017 Jan; 9(2):582-593. PubMed ID: 27886327
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of electrode materials on resistive switching behaviour of NbO
    Leonetti G; Fretto M; Pirri FC; De Leo N; Valov I; Milano G
    Sci Rep; 2023 Oct; 13(1):17003. PubMed ID: 37813937
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.
    Dias C; Guerra LM; Bordalo BD; Lv H; Ferraria AM; Botelho do Rego AM; Cardoso S; Freitas PP; Ventura J
    Phys Chem Chem Phys; 2017 May; 19(17):10898-10904. PubMed ID: 28401238
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.
    Lü W; Li C; Zheng L; Xiao J; Lin W; Li Q; Wang XR; Huang Z; Zeng S; Han K; Zhou W; Zeng K; Chen J; Ariando ; Cao W; Venkatesan T
    Adv Mater; 2017 Jun; 29(24):. PubMed ID: 28439926
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.
    Arita M; Takahashi A; Ohno Y; Nakane A; Tsurumaki-Fukuchi A; Takahashi Y
    Sci Rep; 2015 Nov; 5():17103. PubMed ID: 26611856
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO
    Álvarez-Martínez V; Ramos R; Leborán V; Sarantopoulos A; Dittmann R; Rivadulla F
    ACS Appl Mater Interfaces; 2024 Mar; 16(12):15043-15049. PubMed ID: 38477897
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices.
    Baeumer C; Raab N; Menke T; Schmitz C; Rosezin R; Müller P; Andrä M; Feyer V; Bruchhaus R; Gunkel F; Schneider CM; Waser R; Dittmann R
    Nanoscale; 2016 Aug; 8(29):13967-75. PubMed ID: 27089047
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes.
    Baeumer C; Schmitz C; Marchewka A; Mueller DN; Valenta R; Hackl J; Raab N; Rogers SP; Khan MI; Nemsak S; Shim M; Menzel S; Schneider CM; Waser R; Dittmann R
    Nat Commun; 2016 Aug; 7():12398. PubMed ID: 27539213
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Spectromicroscopic insights for rational design of redox-based memristive devices.
    Baeumer C; Schmitz C; Ramadan AH; Du H; Skaja K; Feyer V; Müller P; Arndt B; Jia CL; Mayer J; De Souza RA; Michael Schneider C; Waser R; Dittmann R
    Nat Commun; 2015 Oct; 6():8610. PubMed ID: 26477940
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.
    Sun B; Guo T; Zhou G; Ranjan S; Hou W; Hou Y; Zhao Y
    J Colloid Interface Sci; 2019 Oct; 553():682-687. PubMed ID: 31252184
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction.
    Yamasaki T; Takaoka R; Iimura S; Kim J; Hiramatsu H; Hosono H
    ACS Appl Mater Interfaces; 2022 May; 14(17):19766-19773. PubMed ID: 35438497
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.