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4. Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations. Jallipalli A; Balakrishnan G; Huang Sh; Rotter T; Nunna K; Liang B; Dawson L; Huffaker D Nanoscale Res Lett; 2009 Aug; 4(12):1458-62. PubMed ID: 20652143 [TBL] [Abstract][Full Text] [Related]
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