These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

152 related articles for article (PubMed ID: 28486796)

  • 1. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.
    Yang L; Wang T; Zou Y; Lu HL
    Nanoscale Res Lett; 2017 Dec; 12(1):339. PubMed ID: 28486796
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Al
    Kang HK; Kang YS; Kim DK; Baik M; Song JD; An Y; Kim H; Cho MH
    ACS Appl Mater Interfaces; 2017 May; 9(20):17526-17535. PubMed ID: 28387121
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.
    Kang YS; Kim DK; Kang HK; Jeong KS; Cho MH; Ko DH; Kim H; Seo JH; Kim DC
    ACS Appl Mater Interfaces; 2014 Mar; 6(6):3896-906. PubMed ID: 24467437
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Interfacial, Electrical, and Band Alignment Characteristics of HfO
    Cao YQ; Wu B; Wu D; Li AD
    Nanoscale Res Lett; 2017 Dec; 12(1):370. PubMed ID: 28549375
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Characterization of Al Incorporation into HfO
    Rahman MM; Kim JG; Kim DH; Kim TW
    Micromachines (Basel); 2019 May; 10(6):. PubMed ID: 31151234
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Interface Optimization and Transport Modulation of Sm
    Lu J; He G; Yan J; Dai Z; Zheng G; Jiang S; Qiao L; Gao Q; Fang Z
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947792
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.
    Kim SH; Joo SY; Jin HS; Kim WB; Park TJ
    ACS Appl Mater Interfaces; 2016 Aug; 8(32):20880-4. PubMed ID: 27467383
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Probing the Dielectric Properties of Ultrathin Al/Al
    Acharya J; Wilt J; Liu B; Wu J
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):3112-3120. PubMed ID: 29293311
    [TBL] [Abstract][Full Text] [Related]  

  • 10. In Situ SiO
    Hudait MK; Clavel MB; Liu JS; Bhattacharya S
    ACS Omega; 2018 Nov; 3(11):14567-14574. PubMed ID: 31458140
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability.
    Kang YS; Kang HK; Kim DK; Jeong KS; Baik M; An Y; Kim H; Song JD; Cho MH
    ACS Appl Mater Interfaces; 2016 Mar; 8(11):7489-98. PubMed ID: 26928131
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Atomic-Layer-Deposition Growth of an Ultrathin HfO
    Xiao M; Qiu C; Zhang Z; Peng LM
    ACS Appl Mater Interfaces; 2017 Oct; 9(39):34050-34056. PubMed ID: 28901123
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-
    Wang D; He G; Hao L; Qiao L; Fang Z; Liu J
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition.
    Liu JS; Clavel M; Hudait MK
    ACS Appl Mater Interfaces; 2015 Dec; 7(51):28624-31. PubMed ID: 26642121
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO(2)/HfAlO nanocrystal/Al(2)O(3)/Pt capacitors.
    Maikap S; Rahaman SZ; Tien TC
    Nanotechnology; 2008 Oct; 19(43):435202. PubMed ID: 21832685
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Band Offsets at κ-([Al,In]
    Schultz T; Kneiß M; Storm P; Splith D; von Wenckstern H; Grundmann M; Koch N
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8879-8885. PubMed ID: 31977187
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effect of Al
    Acharya J; Goul R; Romine D; Sakidja R; Wu J
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30368-30375. PubMed ID: 31356739
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Interface Optimization and Performance Enhancement of Er
    Wu Q; Yu Q; He G; Wang W; Lu J; Yao B; Liu S; Fang Z
    Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299643
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.
    Mukherjee C; Das T; Mahata C; Maiti CK; Chia CK; Chiam SY; Chi DZ; Dalapati GK
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3263-74. PubMed ID: 24472090
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Interfacial Cation-Defect Charge Dipoles in Stacked TiO
    Zhang L; Janotti A; Meng AC; Tang K; Van de Walle CG; McIntyre PC
    ACS Appl Mater Interfaces; 2018 Feb; 10(6):5140-5146. PubMed ID: 29369616
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.