These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

249 related articles for article (PubMed ID: 28505402)

  • 1. Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.
    Zhao Y; Xiao X; Huo Y; Wang Y; Zhang T; Jiang K; Wang J; Fan S; Li Q
    ACS Appl Mater Interfaces; 2017 Jun; 9(22):18945-18955. PubMed ID: 28505402
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS
    Wu JY; Chun YT; Li S; Zhang T; Chu D
    ACS Appl Mater Interfaces; 2018 Jul; 10(29):24613-24619. PubMed ID: 29972018
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Vertical and In-Plane Current Devices Using NbS
    Shin HG; Yoon HS; Kim JS; Kim M; Lim JY; Yu S; Park JH; Yi Y; Kim T; Jun SC; Im S
    Nano Lett; 2018 Mar; 18(3):1937-1945. PubMed ID: 29400979
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Schottky Barrier Height Modulation Using Interface Characteristics of MoS
    Kim SH; Han KH; Kim GS; Kim SG; Kim J; Yu HY
    ACS Appl Mater Interfaces; 2019 Feb; 11(6):6230-6237. PubMed ID: 30663311
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Improved contacts to p-type MoS
    Zhang S; Le ST; Richter CA; Hacker CA
    Appl Phys Lett; 2019; 115(7):. PubMed ID: 32116333
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Carrier Transport Properties of MoS
    Kim SJ; Park JY; Yoo S; Umadevi P; Lee H; Cho J; Kang K; Jun SC
    Nanoscale Res Lett; 2018 Sep; 13(1):265. PubMed ID: 30182283
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Non-invasively improving the Schottky barrier of MoS
    Fang Q; Zhao X; Yuan L; Wang B; Xia C; Ma F
    Phys Chem Chem Phys; 2021 Jul; 23(27):14796-14802. PubMed ID: 34198313
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Asymmetric Chemical Functionalization of Top-Contact Electrodes: Tuning the Charge Injection for High-Performance MoS
    Han B; Zhao Y; Ma C; Wang C; Tian X; Wang Y; Hu W; Samorì P
    Adv Mater; 2022 Mar; 34(12):e2109445. PubMed ID: 35061928
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors.
    Nosho Y; Ohno Y; Kishimoto S; Mizutani T
    Nanotechnology; 2006 Jul; 17(14):3412-5. PubMed ID: 19661583
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.
    Kumar A; Kashid R; Ghosh A; Kumar V; Singh R
    ACS Appl Mater Interfaces; 2016 Mar; 8(12):8213-23. PubMed ID: 26963627
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
    Barreda JL; Keiper TD; Zhang M; Xiong P
    ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact.
    Kim SH; Han KH; Park E; Kim SG; Yu HY
    ACS Appl Mater Interfaces; 2019 Sep; 11(37):34084-34090. PubMed ID: 31429263
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ambipolar MoS
    Giannazzo F; Fisichella G; Greco G; Di Franco S; Deretzis I; La Magna A; Bongiorno C; Nicotra G; Spinella C; Scopelliti M; Pignataro B; Agnello S; Roccaforte F
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):23164-23174. PubMed ID: 28603968
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Tuning the Schottky barrier height of the Pd-MoS2 contact by different strains.
    Liu B; Wu LJ; Zhao YQ; Wang LZ; Cai MQ
    Phys Chem Chem Phys; 2015 Oct; 17(40):27088-93. PubMed ID: 26412203
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.
    Du Y; Liu H; Deng Y; Ye PD
    ACS Nano; 2014 Oct; 8(10):10035-42. PubMed ID: 25314022
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
    Liu H; Si M; Deng Y; Neal AT; Du Y; Najmaei S; Ajayan PM; Lou J; Ye PD
    ACS Nano; 2014 Jan; 8(1):1031-8. PubMed ID: 24351134
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS
    Tabata H; Sato Y; Oi K; Kubo O; Katayama M
    ACS Appl Mater Interfaces; 2018 Nov; 10(44):38387-38393. PubMed ID: 30360048
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts.
    Chen C; Liao C; Wei L; Zhong H; He R; Liu Q; Liu X; Lai Y; Song C; Jin T; Zhang Y
    Sci Rep; 2016 Feb; 6():22203. PubMed ID: 26915400
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Diode-Like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride.
    Jaiswal HN; Liu M; Shahi S; Wei S; Lee J; Chakravarty A; Guo Y; Wang R; Lee JM; Chang C; Fu Y; Dixit R; Liu X; Yang C; Yao F; Li H
    Adv Mater; 2020 Sep; 32(36):e2002716. PubMed ID: 32725788
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Schottky Barrier Height of Pd/MoS
    Dong H; Gong C; Addou R; McDonnell S; Azcatl A; Qin X; Wang W; Wang W; Hinkle CL; Wallace RM
    ACS Appl Mater Interfaces; 2017 Nov; 9(44):38977-38983. PubMed ID: 29035026
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 13.