These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

193 related articles for article (PubMed ID: 28508634)

  • 1. Interfacial Metal-Oxide Interactions in Resistive Switching Memories.
    Cho DY; Luebben M; Wiefels S; Lee KS; Valov I
    ACS Appl Mater Interfaces; 2017 Jun; 9(22):19287-19295. PubMed ID: 28508634
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Impact of oxygen exchange reaction at the ohmic interface in Ta
    Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
    Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories.
    Chen S; Valov I
    Adv Mater; 2022 Jan; 34(3):e2105022. PubMed ID: 34695257
    [TBL] [Abstract][Full Text] [Related]  

  • 4. On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices.
    Kindsmüller A; Meledin A; Mayer J; Waser R; Wouters DJ
    Nanoscale; 2019 Oct; 11(39):18201-18208. PubMed ID: 31560012
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.
    Lübben M; Karakolis P; Ioannou-Sougleridis V; Normand P; Dimitrakis P; Valov I
    Adv Mater; 2015 Oct; 27(40):6202-7. PubMed ID: 26456484
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
    Ambrosi E; Bricalli A; Laudato M; Ielmini D
    Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories.
    Younis A; Chu D; Shah AH; Du H; Li S
    ACS Appl Mater Interfaces; 2017 Jan; 9(2):1585-1592. PubMed ID: 27958711
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO
    Zhang H; Yoo S; Menzel S; Funck C; Cüppers F; Wouters DJ; Hwang CS; Waser R; Hoffmann-Eifert S
    ACS Appl Mater Interfaces; 2018 Sep; 10(35):29766-29778. PubMed ID: 30088755
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaO
    Tsurumaki-Fukuchi A; Nakagawa R; Arita M; Takahashi Y
    ACS Appl Mater Interfaces; 2018 Feb; 10(6):5609-5617. PubMed ID: 29355014
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models.
    Nakamura H; Asai Y
    Phys Chem Chem Phys; 2016 Apr; 18(13):8820-6. PubMed ID: 26975565
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.
    Wedig A; Luebben M; Cho DY; Moors M; Skaja K; Rana V; Hasegawa T; Adepalli KK; Yildiz B; Waser R; Valov I
    Nat Nanotechnol; 2016 Jan; 11(1):67-74. PubMed ID: 26414197
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches.
    Cho DY; Kim KJ; Lee KS; Lübben M; Chen S; Valov I
    ACS Appl Mater Interfaces; 2023 Apr; 15(14):18528-18536. PubMed ID: 36989142
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Effect of electrode materials on resistive switching behaviour of NbO
    Leonetti G; Fretto M; Pirri FC; De Leo N; Valov I; Milano G
    Sci Rep; 2023 Oct; 13(1):17003. PubMed ID: 37813937
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The current limit and self-rectification functionalities in the TiO
    Yoon JH; Kwon DE; Kim Y; Kwon YJ; Yoon KJ; Park TH; Shao XL; Hwang CS
    Nanoscale; 2017 Aug; 9(33):11920-11928. PubMed ID: 28786468
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys.
    Zrinski I; Zavašnik J; Duchoslav J; Hassel AW; Mardare AI
    Nanomaterials (Basel); 2022 Nov; 12(22):. PubMed ID: 36432230
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Roles of conducting filament and non-filament regions in the Ta
    Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
    Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
    [TBL] [Abstract][Full Text] [Related]  

  • 17. The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport.
    Zhong X; Rungger I; Zapol P; Nakamura H; Asai Y; Heinonen O
    Phys Chem Chem Phys; 2016 Mar; 18(10):7502-10. PubMed ID: 26902598
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory.
    Jiang H; Stewart DA
    ACS Appl Mater Interfaces; 2017 May; 9(19):16296-16304. PubMed ID: 28436217
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface.
    Yawar A; Park MR; Hu Q; Song WJ; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7564-8. PubMed ID: 26726372
    [TBL] [Abstract][Full Text] [Related]  

  • 20. In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface.
    Baek K; Park S; Park J; Kim YM; Hwang H; Oh SH
    Nanoscale; 2017 Jan; 9(2):582-593. PubMed ID: 27886327
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.