These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

315 related articles for article (PubMed ID: 28560867)

  • 1. Quasi-Two-Dimensional h-BN/β-Ga
    Kim J; Mastro MA; Tadjer MJ; Kim J
    ACS Appl Mater Interfaces; 2017 Jun; 9(25):21322-21327. PubMed ID: 28560867
    [TBL] [Abstract][Full Text] [Related]  

  • 2. 2D Amorphous GaO
    Moon S; Lee D; Park J; Kim J
    ACS Appl Mater Interfaces; 2023 Aug; 15(31):37687-37695. PubMed ID: 37498125
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Heterostructure WSe
    Kim J; Mastro MA; Tadjer MJ; Kim J
    ACS Appl Mater Interfaces; 2018 Sep; 10(35):29724-29729. PubMed ID: 30092634
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga
    Kim J; Kim J
    ACS Appl Mater Interfaces; 2020 Feb; 12(6):7310-7316. PubMed ID: 31898449
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga
    Li XX; Sun Y; Zeng G; Li YC; Zhang R; Sai QL; Xia CT; Zhang DW; Yang YG; Lu HL
    J Phys Chem Lett; 2022 Apr; 13(15):3377-3381. PubMed ID: 35404057
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
    ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Influence of High-Energy Proton Irradiation on β-Ga
    Yang G; Jang S; Ren F; Pearton SJ; Kim J
    ACS Appl Mater Interfaces; 2017 Nov; 9(46):40471-40476. PubMed ID: 29083157
    [TBL] [Abstract][Full Text] [Related]  

  • 8. All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality.
    Nakamura K; Nagamura N; Ueno K; Taniguchi T; Watanabe K; Nagashio K
    ACS Appl Mater Interfaces; 2020 Nov; 12(46):51598-51606. PubMed ID: 33146991
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Field-plate engineering for high breakdown voltage β-Ga
    Bae J; Kim HW; Kang IH; Kim J
    RSC Adv; 2019 Mar; 9(17):9678-9683. PubMed ID: 35520692
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Graphite/h-BN van der Waals heterostructure as a gate stack for HgTe quantum wells.
    Liang X; Shamim S; Chen D; Fürst L; Taniguchi T; Watanabe K; Buhmann H; Kleinlein J; Molenkamp LW
    Nanotechnology; 2024 Jun; 35(34):. PubMed ID: 38788703
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.
    Park H; Shin GH; Lee KJ; Choi SY
    Nanoscale; 2018 Aug; 10(32):15205-15212. PubMed ID: 29808902
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Ambipolar Charge Transport in Two-Dimensional WS
    Lee G; Oh S; Kim J; Kim J
    ACS Appl Mater Interfaces; 2020 May; 12(20):23127-23133. PubMed ID: 32337986
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface.
    Hattori Y; Taniguchi T; Watanabe K; Nagashio K
    ACS Appl Mater Interfaces; 2018 Apr; 10(14):11732-11738. PubMed ID: 29552882
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.
    Zou X; Huang CW; Wang L; Yin LJ; Li W; Wang J; Wu B; Liu Y; Yao Q; Jiang C; Wu WW; He L; Chen S; Ho JC; Liao L
    Adv Mater; 2016 Mar; 28(10):2062-9. PubMed ID: 26762171
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
    Shih HY; Chu FC; Das A; Lee CY; Chen MJ; Lin RM
    Nanoscale Res Lett; 2016 Dec; 11(1):235. PubMed ID: 27129687
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride.
    Lin S; Li X; Wang P; Xu Z; Zhang S; Zhong H; Wu Z; Xu W; Chen H
    Sci Rep; 2015 Oct; 5():15103. PubMed ID: 26458358
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.
    Kim J; Oh S; Mastro MA; Kim J
    Phys Chem Chem Phys; 2016 Jun; 18(23):15760-4. PubMed ID: 27230724
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure.
    Murakami K; Igari T; Mitsuishi K; Nagao M; Sasaki M; Yamada Y
    ACS Appl Mater Interfaces; 2020 Jan; 12(3):4061-4067. PubMed ID: 31880426
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array.
    Lee HY; Liu DS; Chyi JI; Chang EY; Lee CT
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34639872
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tuning Supercurrent in Josephson Field-Effect Transistors Using h-BN Dielectric.
    Barati F; Thompson JP; Dartiailh MC; Sardashti K; Mayer W; Yuan J; Wickramasinghe K; Watanabe K; Taniguchi T; Churchill H; Shabani J
    Nano Lett; 2021 Mar; 21(5):1915-1920. PubMed ID: 33617256
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.