323 related articles for article (PubMed ID: 28574714)
1. Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.
Rabiee Golgir H; Li DW; Keramatnejad K; Zou QM; Xiao J; Wang F; Jiang L; Silvain JF; Lu YF
ACS Appl Mater Interfaces; 2017 Jun; 9(25):21539-21547. PubMed ID: 28574714
[TBL] [Abstract][Full Text] [Related]
2. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.
He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860
[TBL] [Abstract][Full Text] [Related]
3. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.
Wang W; Yang W; Lin Y; Zhou S; Li G
Sci Rep; 2015 Nov; 5():16453. PubMed ID: 26563573
[TBL] [Abstract][Full Text] [Related]
4. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates.
Lin MH; Wen HC; Jeng YR; Chou CP
Nanoscale Res Lett; 2010 Aug; 5(11):1812-1816. PubMed ID: 21124631
[TBL] [Abstract][Full Text] [Related]
5. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN.
Kamarundzaman A; Abu Bakar AS; Azman A; Omar AZ; Talik NA; Supangat A; Abd Majid WH
Sci Rep; 2021 May; 11(1):9724. PubMed ID: 33958689
[TBL] [Abstract][Full Text] [Related]
6. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.
Wang W; Wang H; Yang W; Zhu Y; Li G
Sci Rep; 2016 Apr; 6():24448. PubMed ID: 27101930
[TBL] [Abstract][Full Text] [Related]
7. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.
Wang J; Xu F; He C; Zhang L; Lu L; Wang X; Qin Z; Shen B
Sci Rep; 2017 Feb; 7():42747. PubMed ID: 28220829
[TBL] [Abstract][Full Text] [Related]
8. Characteristics of ZnO nanowall structures grown on GaN template using organometallic chemical vapor deposition.
Wu CC; Wuu DS; Chen TN; Yu TE; Lin PR; Horng RH; Sun S
J Nanosci Nanotechnol; 2008 Aug; 8(8):3851-6. PubMed ID: 19049140
[TBL] [Abstract][Full Text] [Related]
9. Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides.
Feng IW; Zhao W; Li J; Lin J; Jiang H; Zavada J
Appl Opt; 2013 Aug; 52(22):5426-9. PubMed ID: 23913061
[TBL] [Abstract][Full Text] [Related]
10. High quality N-polar GaN films grown with varied V/III ratios by metal-organic vapor phase epitaxy.
Li C; Zhang K; Qiaoyu Zeng ; Yin X; Ge X; Wang J; Wang Q; He C; Zhao W; Chen Z
RSC Adv; 2020 Nov; 10(70):43187-43192. PubMed ID: 35514894
[TBL] [Abstract][Full Text] [Related]
11. Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition.
Lin PY; Chen JY; Shih YS; Chang L
Nanoscale Res Lett; 2014; 9(1):628. PubMed ID: 25489282
[TBL] [Abstract][Full Text] [Related]
12. Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO6 substrates.
Wang W; Yang W; Gao F; Lin Y; Li G
Sci Rep; 2015 Mar; 5():9315. PubMed ID: 25799042
[TBL] [Abstract][Full Text] [Related]
13. High-Photoresponsivity Self-Powered
Ma Y; Chen T; Zhang X; Tang W; Feng B; Hu Y; Zhang L; Zhou X; Wei X; Xu K; Mudiyanselage D; Fu H; Zhang B
ACS Appl Mater Interfaces; 2022 Aug; 14(30):35194-35204. PubMed ID: 35877929
[TBL] [Abstract][Full Text] [Related]
14. Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates.
Li P; Xiong T; Wang L; Sun S; Chen C
RSC Adv; 2020 Jan; 10(4):2096-2103. PubMed ID: 35494563
[TBL] [Abstract][Full Text] [Related]
15. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded Al
Lee CJ; Won CH; Lee JH; Hahm SH; Park H
Sensors (Basel); 2017 Jul; 17(7):. PubMed ID: 28753989
[TBL] [Abstract][Full Text] [Related]
16. One-step graphene coating of heteroepitaxial GaN films.
Choi JK; Huh JH; Kim SD; Moon D; Yoon D; Joo K; Kwak J; Chu JH; Kim SY; Park K; Kim YW; Yoon E; Cheong H; Kwon SY
Nanotechnology; 2012 Nov; 23(43):435603. PubMed ID: 23059535
[TBL] [Abstract][Full Text] [Related]
17. GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.
Gondal MA; Chang XF; Yamani ZH; Yang GF; Ji GB
J Environ Sci Health A Tox Hazard Subst Environ Eng; 2011; 46(4):415-9. PubMed ID: 21391035
[TBL] [Abstract][Full Text] [Related]
18. Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.
Song J; Choi J; Xiong K; Xie Y; Cha JJ; Han J
ACS Appl Mater Interfaces; 2017 Apr; 9(16):14088-14092. PubMed ID: 28361536
[TBL] [Abstract][Full Text] [Related]
19. In Situ Conformal Coating of Polyaniline on GaN Microwires for Ultrafast, Self-Driven Heterojunction Ultraviolet Photodetectors.
Sun Y; Song W; Gao F; Wang X; Luo X; Guo J; Zhang B; Shi J; Cheng C; Liu Q; Li S
ACS Appl Mater Interfaces; 2020 Mar; 12(11):13473-13480. PubMed ID: 32072809
[TBL] [Abstract][Full Text] [Related]
20. Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes.
Park AH; Seo TH
Materials (Basel); 2023 Nov; 16(22):. PubMed ID: 38005145
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
