These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
242 related articles for article (PubMed ID: 28585272)
1. Homogeneous 2D MoTe Lim JY; Pezeshki A; Oh S; Kim JS; Lee YT; Yu S; Hwang DK; Lee GH; Choi HJ; Im S Adv Mater; 2017 Aug; 29(30):. PubMed ID: 28585272 [TBL] [Abstract][Full Text] [Related]
2. Homogeneous 2D MoTe Chen J; Zhu J; Wang Q; Wan J; Liu R Small; 2020 Jul; 16(30):e2001428. PubMed ID: 32578379 [TBL] [Abstract][Full Text] [Related]
3. Conversion of Charge Carrier Polarity in MoTe Kim H; Uddin I; Watanabe K; Taniguchi T; Whang D; Kim GH Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242116 [TBL] [Abstract][Full Text] [Related]
4. Controllable P- and N-Type Conversion of MoTe Park YJ; Katiyar AK; Hoang AT; Ahn JH Small; 2019 Jul; 15(28):e1901772. PubMed ID: 31099978 [TBL] [Abstract][Full Text] [Related]
5. Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors. Pezeshki A; Hosseini Shokouh SH; Jeon PJ; Shackery I; Kim JS; Oh IK; Jun SC; Kim H; Im S ACS Nano; 2016 Jan; 10(1):1118-25. PubMed ID: 26631357 [TBL] [Abstract][Full Text] [Related]
6. Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with Qi D; Han C; Rong X; Zhang XW; Chhowalla M; Wee ATS; Zhang W ACS Nano; 2019 Aug; 13(8):9464-9472. PubMed ID: 31328916 [TBL] [Abstract][Full Text] [Related]
7. Nonvolatile and Programmable Photodoping in MoTe Liu T; Xiang D; Zheng Y; Wang Y; Wang X; Wang L; He J; Liu L; Chen W Adv Mater; 2018 Dec; 30(52):e1804470. PubMed ID: 30393893 [TBL] [Abstract][Full Text] [Related]
8. Coupling Two-Dimensional MoTe Lee HS; Choi K; Kim JS; Yu S; Ko KR; Im S ACS Appl Mater Interfaces; 2017 May; 9(18):15592-15598. PubMed ID: 28436650 [TBL] [Abstract][Full Text] [Related]
9. High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS Jia X; Cheng Z; Han B; Cheng X; Wang Q; Ran Y; Xu W; Li Y; Gao P; Dai L Small; 2023 May; 19(19):e2207927. PubMed ID: 36748299 [TBL] [Abstract][Full Text] [Related]
10. P/N-Type Conversion of 2D MoTe Cheng Z; Jia X; Han B; Li M; Xu W; Li Y; Gao P; Dai L ACS Appl Mater Interfaces; 2024 Jul; 16(28):36539-36546. PubMed ID: 38973165 [TBL] [Abstract][Full Text] [Related]
11. Low-power-consumption CMOS inverter array based on CVD-grown Du W; Jia X; Cheng Z; Xu W; Li Y; Dai L iScience; 2021 Dec; 24(12):103491. PubMed ID: 34917894 [TBL] [Abstract][Full Text] [Related]
12. Electrical Polarity Modulation in V-Doped Monolayer WS Gao B; Wang W; Meng Y; Du C; Long Y; Zhang Y; Shao H; Lai Z; Wang W; Xie P; Yip S; Zhong X; Ho JC Small; 2024 Oct; 20(43):e2402217. PubMed ID: 38924273 [TBL] [Abstract][Full Text] [Related]
13. Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits. Jeon PJ; Kim JS; Lim JY; Cho Y; Pezeshki A; Lee HS; Yu S; Min SW; Im S ACS Appl Mater Interfaces; 2015 Oct; 7(40):22333-40. PubMed ID: 26399664 [TBL] [Abstract][Full Text] [Related]
14. Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS Cho Y; Park JH; Kim M; Jeong Y; Yu S; Lim JY; Yi Y; Im S Nano Lett; 2019 Apr; 19(4):2456-2463. PubMed ID: 30855970 [TBL] [Abstract][Full Text] [Related]
15. Controlling Polarity of MoTe Liu X; Islam A; Guo J; Feng PX ACS Nano; 2020 Feb; 14(2):1457-1467. PubMed ID: 31909988 [TBL] [Abstract][Full Text] [Related]
16. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide. Das T; Chen X; Jang H; Oh IK; Kim H; Ahn JH Small; 2016 Nov; 12(41):5720-5727. PubMed ID: 27608439 [TBL] [Abstract][Full Text] [Related]
17. Reversible and Precisely Controllable p/n-Type Doping of MoTe Chang YM; Yang SH; Lin CY; Chen CH; Lien CH; Jian WB; Ueno K; Suen YW; Tsukagoshi K; Lin YF Adv Mater; 2018 Mar; 30(13):e1706995. PubMed ID: 29430746 [TBL] [Abstract][Full Text] [Related]
18. Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters. Sun X; Zhu C; Liu H; Zheng B; Liu Y; Yi J; Fang L; Liu Y; Wang X; Zubair M; Zhu X; Wang X; Li D; Pan A Sci Bull (Beijing); 2020 Dec; 65(23):2007-2013. PubMed ID: 36659059 [TBL] [Abstract][Full Text] [Related]
19. High-Performance Complementary Circuits from Two-Dimensional MoTe Cai J; Sun Z; Wu P; Tripathi R; Lan HY; Kong J; Chen Z; Appenzeller J Nano Lett; 2023 Dec; 23(23):10939-10945. PubMed ID: 37976291 [TBL] [Abstract][Full Text] [Related]
20. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters. Xu Q; Zhao J; Pecunia V; Xu W; Zhou C; Dou J; Gu W; Lin J; Mo L; Zhao Y; Cui Z ACS Appl Mater Interfaces; 2017 Apr; 9(14):12750-12758. PubMed ID: 28337913 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]