These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
143 related articles for article (PubMed ID: 28592820)
1. One dimensional transport in silicon nanowire junction-less field effect transistors. Mirza MM; Schupp FJ; Mol JA; MacLaren DA; Briggs GAD; Paul DJ Sci Rep; 2017 Jun; 7(1):3004. PubMed ID: 28592820 [TBL] [Abstract][Full Text] [Related]
2. Nanowire transistors without junctions. Colinge JP; Lee CW; Afzalian A; Akhavan ND; Yan R; Ferain I; Razavi P; O'Neill B; Blake A; White M; Kelleher AM; McCarthy B; Murphy R Nat Nanotechnol; 2010 Mar; 5(3):225-9. PubMed ID: 20173755 [TBL] [Abstract][Full Text] [Related]
3. A III-V nanowire channel on silicon for high-performance vertical transistors. Tomioka K; Yoshimura M; Fukui T Nature; 2012 Aug; 488(7410):189-92. PubMed ID: 22854778 [TBL] [Abstract][Full Text] [Related]
5. Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature. Lavieville R; Triozon F; Barraud S; Corna A; Jehl X; Sanquer M; Li J; Abisset A; Duchemin I; Niquet YM Nano Lett; 2015 May; 15(5):2958-64. PubMed ID: 25923197 [TBL] [Abstract][Full Text] [Related]
6. Vertical nanowire array-based field effect transistors for ultimate scaling. Larrieu G; Han XL Nanoscale; 2013 Mar; 5(6):2437-41. PubMed ID: 23403487 [TBL] [Abstract][Full Text] [Related]
7. Electron transport in multigate In x Ga 1-x as nanowire FETs: from diffusive to ballistic regimes at room temperature. Thathachary AV; Agrawal N; Liu L; Datta S Nano Lett; 2014 Feb; 14(2):626-33. PubMed ID: 24382089 [TBL] [Abstract][Full Text] [Related]
8. Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors. Weber WM; Mikolajick T Rep Prog Phys; 2017 Jun; 80(6):066502. PubMed ID: 28054936 [TBL] [Abstract][Full Text] [Related]
9. Single-electron and quantum confinement limits in length-scaled silicon nanowires. Wang C; Jones ME; Durrani ZA Nanotechnology; 2015 Jul; 26(30):305203. PubMed ID: 26160889 [TBL] [Abstract][Full Text] [Related]
10. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient. Barreda JL; Keiper TD; Zhang M; Xiong P ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114 [TBL] [Abstract][Full Text] [Related]
11. In situ axially doped n-channel silicon nanowire field-effect transistors. Ho TT; Wang Y; Eichfeld S; Lew KK; Liu B; Mohney SE; Redwing JM; Mayer TS Nano Lett; 2008 Dec; 8(12):4359-64. PubMed ID: 19367848 [TBL] [Abstract][Full Text] [Related]
12. Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate. Liu F; Ibukuro K; Husain MK; Li Z; Hillier J; Tomita I; Tsuchiya Y; Rutt H; Saito S Nanotechnology; 2018 Nov; 29(47):475201. PubMed ID: 30191886 [TBL] [Abstract][Full Text] [Related]
13. One-dimensional hole gas in germanium/silicon nanowire heterostructures. Lu W; Xiang J; Timko BP; Wu Y; Lieber CM Proc Natl Acad Sci U S A; 2005 Jul; 102(29):10046-51. PubMed ID: 16006507 [TBL] [Abstract][Full Text] [Related]
14. Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors. Zhang Y; Fan J; Huang Q; Zhu J; Zhao Y; Li M; Wu Y; Huang R Sci Rep; 2018 Oct; 8(1):15194. PubMed ID: 30315203 [TBL] [Abstract][Full Text] [Related]
15. Carrier transport in high mobility InAs nanowire junctionless transistors. Konar A; Mathew J; Nayak K; Bajaj M; Pandey RK; Dhara S; Murali KV; Deshmukh MM Nano Lett; 2015 Mar; 15(3):1684-90. PubMed ID: 25658044 [TBL] [Abstract][Full Text] [Related]
16. Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping. Kim T; Lim D; Son J; Cho K; Kim S Nanotechnology; 2022 Jul; 33(41):. PubMed ID: 35777260 [TBL] [Abstract][Full Text] [Related]
17. Vertical Field Emission Air-Channel Diodes and Transistors. Chang WT; Hsu HJ; Pao PH Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817757 [TBL] [Abstract][Full Text] [Related]
18. Length scaling of carbon nanotube transistors. Franklin AD; Chen Z Nat Nanotechnol; 2010 Dec; 5(12):858-62. PubMed ID: 21102468 [TBL] [Abstract][Full Text] [Related]
19. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. Gu J; Zhang Q; Wu Z; Yao J; Zhang Z; Zhu X; Wang G; Li J; Zhang Y; Cai Y; Xu R; Xu G; Xu Q; Yin H; Luo J; Wang W; Ye T Nanomaterials (Basel); 2021 Jan; 11(2):. PubMed ID: 33530292 [TBL] [Abstract][Full Text] [Related]