195 related articles for article (PubMed ID: 28598471)
1. Fast gate-tunable photodetection in the graphene sandwiched WSe
Wei X; Yan F; Lv Q; Shen C; Wang K
Nanoscale; 2017 Jun; 9(24):8388-8392. PubMed ID: 28598471
[TBL] [Abstract][Full Text] [Related]
2. Gate tunable WSe2-BP van der Waals heterojunction devices.
Chen P; Zhang TT; zhang J; Xiang J; Yu H; Wu S; Lu X; Wang G; Wen F; Liu Z; Yang R; Shi D; Zhang G
Nanoscale; 2016 Feb; 8(6):3254-8. PubMed ID: 26810387
[TBL] [Abstract][Full Text] [Related]
3. Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS
Yang S; Wu M; Wang B; Zhao LD; Huang L; Jiang C; Wei SH
ACS Appl Mater Interfaces; 2017 Dec; 9(48):42149-42155. PubMed ID: 29134796
[TBL] [Abstract][Full Text] [Related]
4. Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices.
Kim W; Arpiainen S; Xue H; Soikkeli M; Qi M; Sun Z; Lipsanen H; Chaves FA; Jiménez D; Prunnila M
ACS Appl Nano Mater; 2018 Aug; 1(8):3895-3902. PubMed ID: 30259010
[TBL] [Abstract][Full Text] [Related]
5. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices.
Hu H; Zhen W; Yue Z; Niu R; Xu F; Zhu W; Jiao K; Long M; Xi C; Zhu W; Zhang C
Nanoscale Adv; 2023 Nov; 5(22):6210-6215. PubMed ID: 37941949
[TBL] [Abstract][Full Text] [Related]
6. Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe
Elahi E; Khan MF; Rehman S; Khalil HMW; Rehman MA; Kim DK; Kim H; Khan K; Shahzad M; Iqbal MW; Basit MA; Khan F
Dalton Trans; 2020 Aug; 49(29):10017-10027. PubMed ID: 32643710
[TBL] [Abstract][Full Text] [Related]
7. Gate-Tunable Photodetection/Voltaic Device Based on BP/MoTe
Xie Y; Wu E; Zhang J; Hu X; Zhang D; Liu J
ACS Appl Mater Interfaces; 2019 Apr; 11(15):14215-14221. PubMed ID: 30905149
[TBL] [Abstract][Full Text] [Related]
8. Tunable WSe
Lin P; Zhu L; Li D; Xu L; Wang ZL
Nanoscale; 2018 Aug; 10(30):14472-14479. PubMed ID: 30022213
[TBL] [Abstract][Full Text] [Related]
9. Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe
Son SB; Kim Y; Kim A; Cho B; Hong WK
ACS Appl Mater Interfaces; 2017 Nov; 9(47):41537-41545. PubMed ID: 29110451
[TBL] [Abstract][Full Text] [Related]
10. Gate-Tunable WSe
Murali K; Dandu M; Das S; Majumdar K
ACS Appl Mater Interfaces; 2018 Feb; 10(6):5657-5664. PubMed ID: 29355302
[TBL] [Abstract][Full Text] [Related]
11. Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure.
Phuc HV; Hieu NN; Hoi BD; Nguyen CV
Phys Chem Chem Phys; 2018 Jul; 20(26):17899-17908. PubMed ID: 29926024
[TBL] [Abstract][Full Text] [Related]
12. Broken-Gap PtS
Tan C; Yin S; Chen J; Lu Y; Wei W; Du H; Liu K; Wang F; Zhai T; Li L
ACS Nano; 2021 May; 15(5):8328-8337. PubMed ID: 33645213
[TBL] [Abstract][Full Text] [Related]
13. Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS
Dastgeer G; Khan MF; Nazir G; Afzal AM; Aftab S; Naqvi BA; Cha J; Min KA; Jamil Y; Jung J; Hong S; Eom J
ACS Appl Mater Interfaces; 2018 Apr; 10(15):13150-13157. PubMed ID: 29578329
[TBL] [Abstract][Full Text] [Related]
14. Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions.
Shang H; Gao F; Dai M; Hu Y; Wang S; Xu B; Wang P; Gao B; Zhang J; Hu P
Small Methods; 2023 Jan; 7(1):e2200966. PubMed ID: 36440646
[TBL] [Abstract][Full Text] [Related]
15. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe
Wang C; Yang S; Xiong W; Xia C; Cai H; Chen B; Wang X; Zhang X; Wei Z; Tongay S; Li J; Liu Q
Phys Chem Chem Phys; 2016 Oct; 18(40):27750-27753. PubMed ID: 27711489
[TBL] [Abstract][Full Text] [Related]
16. High-Performance MoS
Um DS; Lee Y; Lim S; Park S; Lee H; Ko H
ACS Appl Mater Interfaces; 2016 Dec; 8(49):33955-33962. PubMed ID: 27960400
[TBL] [Abstract][Full Text] [Related]
17. van der Waals Heterojunction Devices Based on Organohalide Perovskites and Two-Dimensional Materials.
Cheng HC; Wang G; Li D; He Q; Yin A; Liu Y; Wu H; Ding M; Huang Y; Duan X
Nano Lett; 2016 Jan; 16(1):367-73. PubMed ID: 26666974
[TBL] [Abstract][Full Text] [Related]
18. ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications.
Zhang X; Zhang X; Wang L; Wu Y; Wang Y; Gao P; Han Y; Jie J
Nanotechnology; 2013 Oct; 24(39):395201. PubMed ID: 24013310
[TBL] [Abstract][Full Text] [Related]
19. Type-I PtS
Zhang H; Wang Z; Chen J; Tan C; Yin S; Zhang H; Wang S; Qin Q; Li L
Nanoscale; 2022 Nov; 14(43):16130-16138. PubMed ID: 36239166
[TBL] [Abstract][Full Text] [Related]
20. Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction.
Shang H; Hu Y; Gao F; Dai M; Zhang S; Wang S; Ouyang D; Li X; Song X; Gao B; Zhai T; Hu P
ACS Nano; 2022 Dec; 16(12):21293-21302. PubMed ID: 36468786
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
