These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

207 related articles for article (PubMed ID: 28609089)

  • 21. Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications.
    Lee M; Kim TW; Park CY; Lee K; Taniguchi T; Watanabe K; Kim MG; Hwang DK; Lee YT
    Nanomicro Lett; 2022 Dec; 15(1):22. PubMed ID: 36580180
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device.
    Lee S; Lee Y; Kim C
    Sci Rep; 2017 Sep; 7(1):11065. PubMed ID: 28894172
    [TBL] [Abstract][Full Text] [Related]  

  • 23. A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors.
    Lee C; Lee C; Lee S; Choi J; Yoo H; Im SG
    Nat Commun; 2023 Jun; 14(1):3757. PubMed ID: 37353504
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.
    Shim J; Jang SW; Lim JH; Kim H; Kang DH; Kim KH; Seo S; Heo K; Shin C; Yu HY; Lee S; Ko DH; Park JH
    Nanoscale; 2019 Jul; 11(27):12871-12877. PubMed ID: 31243409
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction.
    Han H; Zhang B; Zhang Z; Wang Y; Liu C; Singh AK; Song A; Li Y; Jin J; Zhang J
    Nano Lett; 2024 Jul; 24(28):8602-8608. PubMed ID: 38954477
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Doping-free complementary WSe
    Kong L; Zhang X; Tao Q; Zhang M; Dang W; Li Z; Feng L; Liao L; Duan X; Liu Y
    Nat Commun; 2020 Apr; 11(1):1866. PubMed ID: 32313257
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Fermi-Level Pinning-Free WSe
    Jang J; Ra HS; Ahn J; Kim TW; Song SH; Park S; Taniguch T; Watanabe K; Lee K; Hwang DK
    Adv Mater; 2022 May; 34(19):e2109899. PubMed ID: 35306686
    [TBL] [Abstract][Full Text] [Related]  

  • 28. High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS
    Shin GH; Lee GB; An ES; Park C; Jin HJ; Lee KJ; Oh DS; Kim JS; Choi YK; Choi SY
    ACS Appl Mater Interfaces; 2020 Jan; 12(4):5106-5112. PubMed ID: 31898448
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS
    Tabata H; Sato Y; Oi K; Kubo O; Katayama M
    ACS Appl Mater Interfaces; 2018 Nov; 10(44):38387-38393. PubMed ID: 30360048
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Demonstration of Complementary Ternary Graphene Field-Effect Transistors.
    Kim YJ; Kim SY; Noh J; Shim CH; Jung U; Lee SK; Chang KE; Cho C; Lee BH
    Sci Rep; 2016 Dec; 6():39353. PubMed ID: 27991594
    [TBL] [Abstract][Full Text] [Related]  

  • 31. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.
    Cho AJ; Park KC; Kwon JY
    Nanoscale Res Lett; 2015; 10():115. PubMed ID: 25852410
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga
    Kim J; Kim J
    ACS Appl Mater Interfaces; 2020 Feb; 12(6):7310-7316. PubMed ID: 31898449
    [TBL] [Abstract][Full Text] [Related]  

  • 33. van der Waals Heterojunction Devices Based on Organohalide Perovskites and Two-Dimensional Materials.
    Cheng HC; Wang G; Li D; He Q; Yin A; Liu Y; Wu H; Ding M; Huang Y; Duan X
    Nano Lett; 2016 Jan; 16(1):367-73. PubMed ID: 26666974
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Diverse field-effect characteristics and negative differential transconductance in a graphene/WS
    Zhang Y; Wang L; Wang B; Yang M; Lin D; Shao J; Zhang N; Jiang Z; Liu M; Hu H
    Opt Express; 2023 Feb; 31(4):6750-6758. PubMed ID: 36823925
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.
    Shin YS; Lee K; Kim YR; Lee H; Lee IM; Kang WT; Lee BH; Kim K; Heo J; Park S; Lee YH; Yu WJ
    Adv Mater; 2018 Mar; 30(9):. PubMed ID: 29333683
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.
    Li Y; Wang Y; Huang L; Wang X; Li X; Deng HX; Wei Z; Li J
    ACS Appl Mater Interfaces; 2016 Jun; 8(24):15574-81. PubMed ID: 27258569
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Multifunctional Graphene/DNA-Based Platform for the Construction of Enzyme-Free Ternary Logic Gates.
    Zhou C; Liu D; Wu C; Dong S; Wang E
    ACS Appl Mater Interfaces; 2016 Nov; 8(44):30287-30293. PubMed ID: 27750411
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Gate tunable WSe2-BP van der Waals heterojunction devices.
    Chen P; Zhang TT; zhang J; Xiang J; Yu H; Wu S; Lu X; Wang G; Wen F; Liu Z; Yang R; Shi D; Zhang G
    Nanoscale; 2016 Feb; 8(6):3254-8. PubMed ID: 26810387
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.
    Dao TT; Sakai H; Nguyen HT; Ohkubo K; Fukuzumi S; Murata H
    ACS Appl Mater Interfaces; 2016 Jul; 8(28):18249-55. PubMed ID: 27348479
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.
    Li D; Chen M; Zong Q; Zhang Z
    Nano Lett; 2017 Oct; 17(10):6353-6359. PubMed ID: 28956929
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.