These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

216 related articles for article (PubMed ID: 28616375)

  • 1. Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy.
    Kim DH; Kim HS; Song MW; Lee S; Lee SY
    Nano Converg; 2017; 4(1):13. PubMed ID: 28616375
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effects of Mono-Vacancies and Co-Vacancies of Nitrogen and Boron on the Energetics and Electronic Properties of Heterobilayer h-BN/graphene.
    Jiménez GC; Morinson-Negrete JD; Blanquicett FP; Ortega-López C; Espitia-Rico MJ
    Materials (Basel); 2022 Sep; 15(18):. PubMed ID: 36143681
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Theoretical Analysis of Riboflavin Adsorption on Hexagonal Boron Nitride for Drug Delivery Applications: Unveiling the Influence of Point Defects.
    Antipina LY; Kotyakova KY; Sorokin PB
    Int J Mol Sci; 2023 Jul; 24(14):. PubMed ID: 37511405
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Defective graphene domains in boron nitride sheets.
    Dos Santos RM; Santos RB; Neto BGE; Silva GME; Junior LAR
    J Mol Model; 2019 Jul; 25(8):230. PubMed ID: 31324988
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Investigations of Vacancy Structures Related to Their Growth in h-BN Sheet.
    Ryou J; Park J; Hong S
    Nanoscale Res Lett; 2017 Dec; 12(1):445. PubMed ID: 28683541
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbation.
    Riyadi MA; Wong Y; Khoo SX; Hamzah A; Alias NE; Lim CS; Cheong CM; Tan MLP
    PLoS One; 2024; 19(8):e0305555. PubMed ID: 39121165
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Vacancy-Assisted Growth Mechanism of Multilayer Hexagonal Boron Nitride on a Fe
    Jiang R; Shi Z; Zhao W; Gao B; Wu T; Yuan Q
    J Phys Chem Lett; 2020 Oct; 11(20):8511-8517. PubMed ID: 32914631
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Permeation selectivity of pristine and vacancy defected hexagonal boron membranes for alkaline earth metal and ions.
    Munsif S; Ayub K
    J Biomol Struct Dyn; 2022; 40(19):8796-8807. PubMed ID: 34029502
    [TBL] [Abstract][Full Text] [Related]  

  • 9. p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium.
    Sun F; Hao Z; Liu G; Wu C; Lu S; Huang S; Liu C; Hong Q; Chen X; Cai D; Kang J
    Nanoscale; 2018 Mar; 10(9):4361-4369. PubMed ID: 29446428
    [TBL] [Abstract][Full Text] [Related]  

  • 10. First-Principles-Based Method for Electron Localization: Application to Monolayer Hexagonal Boron Nitride.
    Ekuma CE; Dobrosavljević V; Gunlycke D
    Phys Rev Lett; 2017 Mar; 118(10):106404. PubMed ID: 28339229
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Extrapolated Defect Transition Level in Two-Dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride.
    Liu X; Gao Z; Wang V; Luo Z; Lv B; Ding Z; Zhang Z
    ACS Appl Mater Interfaces; 2020 Apr; 12(14):17055-17061. PubMed ID: 32167738
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Monatomic reactions with single vacancy monolayer h-BN: DFT studies.
    Mondinos N; Altarawneh M; Amri A; Hsien Liew WY; Jai Poinern GE; Jiang ZT
    RSC Adv; 2023 Oct; 13(43):30346-30357. PubMed ID: 37849705
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide.
    Gao C; Yang X; Jiang M; Chen L; Chen Z; Singh CV
    Phys Chem Chem Phys; 2021 Sep; 23(35):19525-19536. PubMed ID: 34524293
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of substitutional and vacancy defects on the electrical and mechanical properties of 2D-hexagonal boron nitride.
    Sagar TC; Chinthapenta V
    J Mol Model; 2020 Jul; 26(8):192. PubMed ID: 32620980
    [TBL] [Abstract][Full Text] [Related]  

  • 15. A new planar BCN lateral heterostructure with outstanding strength and defect-mediated superior semiconducting to metallic properties.
    Thomas S; Asle Zaeem M
    Phys Chem Chem Phys; 2020 Oct; 22(38):22066-22077. PubMed ID: 32985621
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Probing the out-of-plane distortion of single point defects in atomically thin hexagonal boron nitride at the picometer scale.
    Alem N; Yazyev OV; Kisielowski C; Denes P; Dahmen U; Hartel P; Haider M; Bischoff M; Jiang B; Louie SG; Zettl A
    Phys Rev Lett; 2011 Mar; 106(12):126102. PubMed ID: 21517331
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Theoretical prediction of the mechanisms for defect healing or oxygen doping in a hexagonal boron nitride (h-BN) sheet with nitrogen vacancies by NO2 molecules.
    Feng JW; Liu YJ; Zhao JX
    J Mol Model; 2014 Jun; 20(6):2307. PubMed ID: 24869782
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Identifying Luminescent Boron Vacancies in h-BN Generated Using Controlled He
    Sarkar S; Xu Y; Mathew S; Lal M; Chung JY; Lee HY; Watanabe K; Taniguchi T; Venkatesan T; Gradečak S
    Nano Lett; 2024 Jan; 24(1):43-50. PubMed ID: 37930062
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of strain on the photoelectric properties of molybdenum ditelluride under vacancy defects: a DFT investigation.
    Dai Y; Liu G; Zhang G
    J Mol Model; 2024 Jul; 30(8):259. PubMed ID: 38977581
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electronic Structure and Surface Chemistry of Hexagonal Boron Nitride on HOPG and Nickel Substrates.
    Småbråten DR; Nylund IE; Marshall K; Walker J; Benelmekki M; Einarsrud MA; Kioseoglou J; Selbach SM
    ACS Omega; 2023 Jul; 8(28):24813-24830. PubMed ID: 37483195
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.