These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

165 related articles for article (PubMed ID: 28639620)

  • 1. Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS
    Zhang X; Liao Q; Liu S; Kang Z; Zhang Z; Du J; Li F; Zhang S; Xiao J; Liu B; Ou Y; Liu X; Gu L; Zhang Y
    Nat Commun; 2017 Jun; 8():15881. PubMed ID: 28639620
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Self-Healing Originated van der Waals Homojunctions with Strong Interlayer Coupling for High-Performance Photodiodes.
    Zhang X; Liao Q; Kang Z; Liu B; Ou Y; Du J; Xiao J; Gao L; Shan H; Luo Y; Fang Z; Wang P; Sun Z; Zhang Z; Zhang Y
    ACS Nano; 2019 Mar; 13(3):3280-3291. PubMed ID: 30803226
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electrode-Induced Self-Healed Monolayer MoS
    Pak S; Jang S; Kim T; Lim J; Hwang JS; Cho Y; Chang H; Jang AR; Park KH; Hong J; Cha S
    Adv Mater; 2021 Oct; 33(41):e2102091. PubMed ID: 34480507
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Defect-Engineered Atomically Thin MoS
    Gao L; Liao Q; Zhang X; Liu X; Gu L; Liu B; Du J; Ou Y; Xiao J; Kang Z; Zhang Z; Zhang Y
    Adv Mater; 2020 Jan; 32(2):e1906646. PubMed ID: 31743525
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS
    Liu M; Shi J; Li Y; Zhou X; Ma D; Qi Y; Zhang Y; Liu Z
    Small; 2017 Oct; 13(40):. PubMed ID: 28799711
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide.
    Gao C; Yang X; Jiang M; Chen L; Chen Z; Singh CV
    Phys Chem Chem Phys; 2021 Sep; 23(35):19525-19536. PubMed ID: 34524293
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Lateral monolayer MoS
    Lu J; Guo Z; Wang W; Lu J; Hu Y; Wang J; Xiao Y; Wang X; Wang S; Zhou Y; Zeng X
    Nanotechnology; 2021 Jan; 32(1):015701. PubMed ID: 32942263
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Sulfur Adatom and Vacancy Accelerate Charge Recombination in MoS
    Li L; Long R; Bertolini T; Prezhdo OV
    Nano Lett; 2017 Dec; 17(12):7962-7967. PubMed ID: 29172545
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Stabilities and electronic properties of monolayer MoS2 with one or two sulfur line vacancy defects.
    Han Y; Hu T; Li R; Zhou J; Dong J
    Phys Chem Chem Phys; 2015 Feb; 17(5):3813-9. PubMed ID: 25562072
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption.
    Sim DM; Kim M; Yim S; Choi MJ; Choi J; Yoo S; Jung YS
    ACS Nano; 2015 Dec; 9(12):12115-23. PubMed ID: 26503105
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Hidden Vacancy Benefit in Monolayer 2D Semiconductors.
    Zhang X; Liao Q; Kang Z; Liu B; Liu X; Ou Y; Xiao J; Du J; Liu Y; Gao L; Gu L; Hong M; Yu H; Zhang Z; Duan X; Zhang Y
    Adv Mater; 2021 Feb; 33(7):e2007051. PubMed ID: 33448081
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Wafer-Scale Substitutional Doping of Monolayer MoS
    Kim Y; Bark H; Kang B; Lee C
    ACS Appl Mater Interfaces; 2019 Apr; 11(13):12613-12621. PubMed ID: 30873829
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Unravelling the effect of sulfur vacancies on the electronic structure of the MoS
    Zhang X; Wang S; Lee CK; Cheng CM; Lan JC; Li X; Qiao J; Tao X
    Phys Chem Chem Phys; 2020 Oct; 22(38):21776-21783. PubMed ID: 32966363
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Au cluster adsorption on perfect and defective MoS
    Ju W; Li T; Su X; Li H; Li X; Ma D
    Phys Chem Chem Phys; 2017 Aug; 19(31):20735-20748. PubMed ID: 28740994
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Wafer-Scale Sulfur Vacancy-Rich Monolayer MoS
    Hu C; Jiang Z; Zhou W; Guo M; Yu T; Luo X; Yuan C
    J Phys Chem Lett; 2019 Aug; 10(16):4763-4768. PubMed ID: 31381350
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment.
    Leong WS; Li Y; Luo X; Nai CT; Quek SY; Thong JT
    Nanoscale; 2015 Jun; 7(24):10823-31. PubMed ID: 26036230
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS
    Wang X; Zhang Y; Si H; Zhang Q; Wu J; Gao L; Wei X; Sun Y; Liao Q; Zhang Z; Ammarah K; Gu L; Kang Z; Zhang Y
    J Am Chem Soc; 2020 Mar; 142(9):4298-4308. PubMed ID: 31999446
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Point-Defect-Passivated MoS
    Han SA; Kim TH; Kim SK; Lee KH; Park HJ; Lee JH; Kim SW
    Adv Mater; 2018 May; 30(21):e1800342. PubMed ID: 29603416
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2.
    Akdim B; Pachter R; Mou S
    Nanotechnology; 2016 May; 27(18):185701. PubMed ID: 26999310
    [TBL] [Abstract][Full Text] [Related]  

  • 20. An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2.
    Yu ZG; Zhang YW; Yakobson BI
    Nano Lett; 2015 Oct; 15(10):6855-61. PubMed ID: 26421881
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.