796 related articles for article (PubMed ID: 28653825)
1. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
[TBL] [Abstract][Full Text] [Related]
2. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
[TBL] [Abstract][Full Text] [Related]
3. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
[TBL] [Abstract][Full Text] [Related]
4. Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition.
Yoon SJ; Seong NJ; Choi K; Shin WC; Yoon SM
RSC Adv; 2018 Jul; 8(44):25014-25020. PubMed ID: 35542140
[TBL] [Abstract][Full Text] [Related]
5. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
Kim SH; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
[TBL] [Abstract][Full Text] [Related]
6. Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.
Bae SH; Yang JH; Kim YH; Kwon YH; Seong NJ; Choi KJ; Hwang CS; Yoon SM
ACS Appl Mater Interfaces; 2022 Jul; 14(27):31010-31023. PubMed ID: 35785988
[TBL] [Abstract][Full Text] [Related]
7. High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.
Baek IH; Pyeon JJ; Han SH; Lee GY; Choi BJ; Han JH; Chung TM; Hwang CS; Kim SK
ACS Appl Mater Interfaces; 2019 Apr; 11(16):14892-14901. PubMed ID: 30945837
[TBL] [Abstract][Full Text] [Related]
8. Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.
Koretomo D; Hamada S; Magari Y; Furuta M
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32325945
[TBL] [Abstract][Full Text] [Related]
9. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
Li ZY; Song SM; Wang WX; Gong JH; Tong Y; Dai MJ; Lin SS; Yang TL; Sun H
Nanotechnology; 2022 Oct; 34(2):. PubMed ID: 36219884
[TBL] [Abstract][Full Text] [Related]
10. Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration.
Ahn HM; Kwon YH; Seong NJ; Choi KJ; Hwang CS; Yang JH; Kim YH; Kim G; Yoon SM
Nanotechnology; 2023 Feb; 34(15):. PubMed ID: 36649644
[TBL] [Abstract][Full Text] [Related]
11. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
12. Amorphous IGZO TFT with High Mobility of ∼70 cm
Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
[TBL] [Abstract][Full Text] [Related]
13. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
[TBL] [Abstract][Full Text] [Related]
14. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
Zhang Y; Xie H; Dong C
Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
[TBL] [Abstract][Full Text] [Related]
15. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
[TBL] [Abstract][Full Text] [Related]
16. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
17. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
Cho MH; Choi CH; Jeong JK
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670
[TBL] [Abstract][Full Text] [Related]
18. Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility.
Kim DG; Lee WB; Lee S; Koh J; Kuh B; Park JS
ACS Appl Mater Interfaces; 2023 Aug; 15(30):36550-36563. PubMed ID: 37489641
[TBL] [Abstract][Full Text] [Related]
19. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.
Ma Q; Zheng HM; Shao Y; Zhu B; Liu WJ; Ding SJ; Zhang DW
Nanoscale Res Lett; 2018 Jan; 13(1):4. PubMed ID: 29318402
[TBL] [Abstract][Full Text] [Related]
20. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
