114 related articles for article (PubMed ID: 28657215)
1. Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain.
Hou X; Cheng XF; Xiao X; He JH; Xu QF; Li H; Li NJ; Chen DY; Lu JM
Chem Asian J; 2017 Sep; 12(17):2278-2283. PubMed ID: 28657215
[TBL] [Abstract][Full Text] [Related]
2. Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.
Hou X; Cheng XF; Zhou J; He JH; Xu QF; Li H; Li NJ; Chen DY; Lu JM
Chemistry; 2017 Nov; 23(64):16393-16400. PubMed ID: 28925062
[TBL] [Abstract][Full Text] [Related]
3. Poly(3,4-ethylenedioxythiophene)-Poly(styrenesulfonate) Interlayer Insertion Enables Organic Quaternary Memory.
Cheng XF; Hou X; Qian WH; He JH; Xu QF; Li H; Li NJ; Chen DY; Lu JM
ACS Appl Mater Interfaces; 2017 Aug; 9(33):27847-27852. PubMed ID: 28777544
[TBL] [Abstract][Full Text] [Related]
4. Surface engineering to achieve organic ternary memory with a high device yield and improved performance.
Hou X; Xiao X; Zhou QH; Cheng XF; He JH; Xu QF; Li H; Li NJ; Chen DY; Lu JM
Chem Sci; 2017 Mar; 8(3):2344-2351. PubMed ID: 28451339
[TBL] [Abstract][Full Text] [Related]
5. Mussel-Inspired Polydopamine Coating for Flexible Ternary Resistive Memory.
Zhao YY; Cheng XF; Qian WH; Zhou J; Sun WJ; Hou X; He JH; Li H; Xu QF; Li NJ; Chen DY; Lu JM
Chem Asian J; 2018 Jul; 13(13):1744-1750. PubMed ID: 29756306
[TBL] [Abstract][Full Text] [Related]
6. Pseudohalide-Induced 2D (CH
Cheng XF; Hou X; Zhou J; Gao BJ; He JH; Li H; Xu QF; Li NJ; Chen DY; Lu JM
Small; 2018 Mar; 14(12):e1703667. PubMed ID: 29457377
[TBL] [Abstract][Full Text] [Related]
7. The modification of indium tin oxide with phosphonic acids: mechanism of binding, tuning of surface properties, and potential for use in organic electronic applications.
Hotchkiss PJ; Jones SC; Paniagua SA; Sharma A; Kippelen B; Armstrong NR; Marder SR
Acc Chem Res; 2012 Mar; 45(3):337-46. PubMed ID: 22011002
[TBL] [Abstract][Full Text] [Related]
8. Resistance Switching Characteristics Induced by O
Chen PH; Chang TC; Chang KC; Tsai TM; Pan CH; Chen MC; Su YT; Lin CY; Tseng YT; Huang HC; Wu H; Deng N; Qian H; Sze SM
ACS Appl Mater Interfaces; 2017 Jan; 9(3):3149-3155. PubMed ID: 28072511
[TBL] [Abstract][Full Text] [Related]
9. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
Lin KW; Wang TY; Chang YC
Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
[TBL] [Abstract][Full Text] [Related]
10. Surface Functionalization of Single-Layered Ti
Sun WJ; Zhao YY; Cheng XF; He JH; Lu JM
ACS Appl Mater Interfaces; 2020 Feb; 12(8):9865-9871. PubMed ID: 32009386
[TBL] [Abstract][Full Text] [Related]
11. An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode.
Li L; Chang KC; Ye C; Lin X; Zhang R; Xu Z; Zhou Y; Xiong W; Kuo TP
Nanoscale; 2020 Feb; 12(5):3267-3272. PubMed ID: 31971203
[TBL] [Abstract][Full Text] [Related]
12. Surface modification and characterization of indium-tin oxide for organic light-emitting devices.
Zhong ZY; Jiang YD
J Colloid Interface Sci; 2006 Oct; 302(2):613-9. PubMed ID: 16890950
[TBL] [Abstract][Full Text] [Related]
13. Phosphonic acid functionalized asymmetric phthalocyanines: synthesis, modification of indium tin oxide, and charge transfer.
Polaske NW; Lin HC; Tang A; Mayukh M; Oquendo LE; Green JT; Ratcliff EL; Armstrong NR; Saavedra SS; McGrath DV
Langmuir; 2011 Dec; 27(24):14900-9. PubMed ID: 22047210
[TBL] [Abstract][Full Text] [Related]
14. Advanced surface modification of indium tin oxide for improved charge injection in organic devices.
Hanson EL; Guo J; Koch N; Schwartz J; Bernasek SL
J Am Chem Soc; 2005 Jul; 127(28):10058-62. PubMed ID: 16011369
[TBL] [Abstract][Full Text] [Related]
15. Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.
Sun Y; Wen D; Bai X; Lu J; Ai C
Sci Rep; 2017 Jun; 7(1):3938. PubMed ID: 28638136
[TBL] [Abstract][Full Text] [Related]
16. Influence of Molecular Aggregation on Electron Transfer at the Perylene Diimide/Indium-Tin Oxide Interface.
Zheng Y; Jradi FM; Parker TC; Barlow S; Marder SR; Saavedra SS
ACS Appl Mater Interfaces; 2016 Dec; 8(49):34089-34097. PubMed ID: 27960436
[TBL] [Abstract][Full Text] [Related]
17. Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design.
Cheng XF; Shi EB; Hou X; Xia SG; He JH; Xu QF; Li H; Li NJ; Chen DY; Lu JM
Chem Asian J; 2017 Jan; 12(1):45-51. PubMed ID: 27781417
[TBL] [Abstract][Full Text] [Related]
18. Bistable memory devices with lower threshold voltage by extending the molecular alkyl-chain length.
Ren W; Zhu Y; Ge J; Xu X; Sun R; Li N; Li H; Xu Q; Zheng J; Lu J
Phys Chem Chem Phys; 2013 Jun; 15(23):9212-8. PubMed ID: 23652665
[TBL] [Abstract][Full Text] [Related]
19. Efficient polymer solar cells fabricated on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-etched old indium tin oxide substrates.
Elshobaki M; Anderegg J; Chaudhary S
ACS Appl Mater Interfaces; 2014 Aug; 6(15):12196-202. PubMed ID: 25046352
[TBL] [Abstract][Full Text] [Related]
20. Systematic investigation of surface modification by organosiloxane self-assembled on indium-tin oxide for improved hole injection in organic light-emitting diodes.
Zhao Y; Duan L; Zhang D; Dong G; Qiao J; Wang L; Qiu Y
ACS Appl Mater Interfaces; 2014 Mar; 6(6):4570-7. PubMed ID: 24593887
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
