These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
331 related articles for article (PubMed ID: 28671809)
1. AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes. Kim KH; Lee TH; Kim TG ACS Appl Mater Interfaces; 2017 Jul; 9(28):24357-24364. PubMed ID: 28671809 [TBL] [Abstract][Full Text] [Related]
2. Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes. Lee TH; Kim KH; Lee BR; Park JH; Schubert EF; Kim TG ACS Appl Mater Interfaces; 2016 Dec; 8(51):35668-35677. PubMed ID: 27990816 [TBL] [Abstract][Full Text] [Related]
3. Nitride-Based Microlight-Emitting Diodes Using AlN Thin-Film Electrodes with Nanoscale Indium/Tin Conducting Filaments. Son KR; Lee TH; Lee BR; Im HS; Kim TG Small; 2018 Dec; 14(49):e1801032. PubMed ID: 30286283 [TBL] [Abstract][Full Text] [Related]
4. Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode. Xu J; Zhang W; Peng M; Dai J; Chen C Opt Lett; 2018 Jun; 43(11):2684-2687. PubMed ID: 29856393 [TBL] [Abstract][Full Text] [Related]
6. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes. Hu H; Zhou S; Liu X; Gao Y; Gui C; Liu S Sci Rep; 2017 Mar; 7():44627. PubMed ID: 28294166 [TBL] [Abstract][Full Text] [Related]
7. Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability. Kim KH; Kim SJ; Lee TH; Lee BR; Kim TG Opt Express; 2016 Aug; 24(16):17711-9. PubMed ID: 27505739 [TBL] [Abstract][Full Text] [Related]
8. Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes. Lee TH; Lee BR; Son KR; Shin HW; Kim TG ACS Appl Mater Interfaces; 2017 Dec; 9(50):43774-43781. PubMed ID: 29185344 [TBL] [Abstract][Full Text] [Related]
9. Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors. Choi CH; Han J; Park JS; Seong TY Opt Express; 2013 Nov; 21(22):26774-9. PubMed ID: 24216898 [TBL] [Abstract][Full Text] [Related]
10. Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes. Park JS; Kim JH; Kim JY; Kim DH; Na JY; Kim SK; Kang D; Seong TY Nanotechnology; 2017 Jan; 28(4):045205. PubMed ID: 27991452 [TBL] [Abstract][Full Text] [Related]
11. Indium Tin Oxide-Free Transparent Conductive Electrode for GaN-Based Ultraviolet Light-Emitting Diodes. Kim JY; Jeon JH; Kwon MK ACS Appl Mater Interfaces; 2015 Apr; 7(15):7945-50. PubMed ID: 25830932 [TBL] [Abstract][Full Text] [Related]
12. Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes. Kim HD; Kim KH; Kim SJ; Kim TG Opt Express; 2015 Nov; 23(22):28775-83. PubMed ID: 26561146 [TBL] [Abstract][Full Text] [Related]
13. Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga₂O₃/Ag/Ga₂O₃ Transparent Conductive Electrode. Wang H; Zhou Q; Liang S; Wen R Nanomaterials (Basel); 2019 Jan; 9(1):. PubMed ID: 30621281 [TBL] [Abstract][Full Text] [Related]
14. Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode. Seo TH; Lee KJ; Park AH; Hong CH; Suh EK; Chae SJ; Lee YH; Cuong TV; Pham VH; Chung JS; Kim EJ; Jeon SR Opt Express; 2011 Nov; 19(23):23111-7. PubMed ID: 22109191 [TBL] [Abstract][Full Text] [Related]
15. Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes. Wang L; Cheng Y; Liu Z; Yi X; Zhu H; Wang G ACS Appl Mater Interfaces; 2016 Jan; 8(2):1176-83. PubMed ID: 26699194 [TBL] [Abstract][Full Text] [Related]
16. Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide Kim TK; Yoon YJ; Oh SK; Cha YJ; Hong IY; Cho MU; Hong CH; Choi HK; Kwak JS J Nanosci Nanotechnol; 2018 Sep; 18(9):6106-6111. PubMed ID: 29677751 [TBL] [Abstract][Full Text] [Related]
17. Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes. Kim MJ; Kim TG ACS Appl Mater Interfaces; 2016 Mar; 8(8):5453-7. PubMed ID: 26859604 [TBL] [Abstract][Full Text] [Related]
18. Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes. Hrong RH; Zeng YY; Wang WK; Tsai CL; Fu YK; Kuo WH Opt Express; 2017 Dec; 25(25):32206-32213. PubMed ID: 29245884 [TBL] [Abstract][Full Text] [Related]
19. Electrical and Optical Properties of a Transparent Conductive ITO/Ga₂O₃/Ag/Ga₂O₃ Multilayer for Ultraviolet Light-Emitting Diodes. Liang S; Zhou Q; Li X; Zhong M; Wang H Nanomaterials (Basel); 2019 Mar; 9(3):. PubMed ID: 30857351 [TBL] [Abstract][Full Text] [Related]
20. A Study on Optimal Indium Tin Oxide Thickness as Transparent Conductive Electrodes for Near-Ultraviolet Light-Emitting Diodes. Kim MJ Materials (Basel); 2023 Jun; 16(13):. PubMed ID: 37445032 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]