These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

183 related articles for article (PubMed ID: 28726966)

  • 1. Ab initio performance predictions of single-layer In-V tunnel field-effect transistors.
    Lu J; Fan ZQ; Gong J; Jiang XW
    Phys Chem Chem Phys; 2017 Aug; 19(30):20121-20126. PubMed ID: 28726966
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High performance tunnel field-effect transistor by gate and source engineering.
    Huang R; Huang Q; Chen S; Wu C; Wang J; An X; Wang Y
    Nanotechnology; 2014 Dec; 25(50):505201. PubMed ID: 25427134
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Improving performance of monolayer arsenene tunnel field-effect transistors by defects.
    Song S; Gong J; Wen H; Yang S
    Nanoscale Adv; 2022 Jul; 4(14):3023-3032. PubMed ID: 36133511
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs.
    Vasen T; Ramvall P; Afzalian A; Doornbos G; Holland M; Thelander C; Dick KA; Wernersson L-; Passlack M
    Sci Rep; 2019 Jan; 9(1):202. PubMed ID: 30655575
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides.
    Li H; Xu P; Lu J
    Nanoscale; 2019 Dec; 11(48):23392-23401. PubMed ID: 31793968
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Vertical Tunnel Field-Effect Transistor with Polysilicon Layer.
    Lee WJ; Kwon HT; Choi HS; Wee D; Park YJ; Kim B; Kim Y
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6722-6726. PubMed ID: 31027017
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.
    Alymov G; Vyurkov V; Ryzhii V; Svintsov D
    Sci Rep; 2016 Apr; 6():24654. PubMed ID: 27098051
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Switching performance assessment of gate-all-around InAs-Si vertical TFET with triple metal gate, a simulation study.
    Madadi D; Mohammadi S
    Discov Nano; 2023 Mar; 18(1):37. PubMed ID: 37382780
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electrical Characteristics of Ge/Si-Based Source Pocket Tunnel Field-Effect Transistors.
    Ahn TJ; Yu YS
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5887-5892. PubMed ID: 29677711
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET.
    Jang WD; Yoon YJ; Cho MS; Jung JH; Lee SH; Jang J; Bae JH; Kang IM
    Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31683726
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.
    Woo SY; Yoon YJ; Cho S; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2013 Dec; 13(12):8133-6. PubMed ID: 24266205
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors.
    Li H; Liang J; Xu P; Luo J; Liu F
    RSC Adv; 2020 May; 10(35):20801-20808. PubMed ID: 35517741
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS
    Cao Z; Zhu L; Yao K
    ACS Appl Mater Interfaces; 2024 Apr; 16(15):19158-19166. PubMed ID: 38572998
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC
    Xu Y; Li D; Sun H; Xu H; Li P
    Phys Chem Chem Phys; 2024 Jan; 26(5):4284-4297. PubMed ID: 38231547
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.
    Ganjipour B; Wallentin J; Borgström MT; Samuelson L; Thelander C
    ACS Nano; 2012 Apr; 6(4):3109-13. PubMed ID: 22414204
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.
    Han K; Long S; Deng Z; Zhang Y; Li J
    Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028719
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Performance Limit of Monolayer WSe
    Sun X; Xu L; Zhang Y; Wang W; Liu S; Yang C; Zhang Z; Lu J
    ACS Appl Mater Interfaces; 2020 May; 12(18):20633-20644. PubMed ID: 32285659
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Sub-5 nm monolayer black phosphorene tunneling transistors.
    Li H; Shi B; Pan Y; Li J; Xu L; Xu L; Zhang Z; Pan F; Lu J
    Nanotechnology; 2018 Nov; 29(48):485202. PubMed ID: 30207546
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.
    Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R
    Sci Rep; 2016 Jun; 6():28515. PubMed ID: 27345020
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.
    Yin Y; Zhang Z; Zhong H; Shao C; Wan X; Zhang C; Robertson J; Guo Y
    ACS Appl Mater Interfaces; 2021 Jan; 13(2):3387-3396. PubMed ID: 33404208
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.