These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

150 related articles for article (PubMed ID: 28729693)

  • 1. Ta
    Wei CY; Shen B; Ding P; Han P; Li AD; Xia YD; Xu B; Yin J; Liu ZG
    Sci Rep; 2017 Jul; 7(1):5988. PubMed ID: 28729693
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Transparent Flash Memory Using Single Ta
    Hota MK; Alshammari FH; Salama KN; Alshareef HN
    ACS Appl Mater Interfaces; 2017 Jul; 9(26):21856-21863. PubMed ID: 28593752
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
    Park JH; Shin MH; Yi JS
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Electronic Structure and Charge-Trapping Characteristics of the Al
    Xu W; Zhang Y; Tang Z; Shao Z; Zhou G; Qin M; Zeng M; Wu S; Zhang Z; Gao J; Lu X; Liu J
    Nanoscale Res Lett; 2017 Dec; 12(1):270. PubMed ID: 28410556
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta
    Li J; Wu J; Liu J; Sun J
    Nanoscale Res Lett; 2019 Mar; 14(1):75. PubMed ID: 30830448
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices.
    El-Atab N; Gamze Ulusoy T; Ghobadi A; Suh J; Islam R; Okyay AK; Saraswat K; Nayfeh A
    Nanotechnology; 2017 Nov; 28(44):445201. PubMed ID: 28832335
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Preparation of Remote Plasma Atomic Layer-Deposited HfO
    Yoo JH; Park WJ; Kim SW; Lee GR; Kim JH; Lee JH; Uhm SH; Lee HC
    Nanomaterials (Basel); 2023 Jun; 13(11):. PubMed ID: 37299688
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash.
    Oh J; Na H; Park S; Sohn H
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6413-5. PubMed ID: 24205672
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Voltage-Polarity Dependent Programming Behaviors of Amorphous In-Ga-Zn-O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer.
    Liu DD; Liu WJ; Pei JX; Xie LY; Huo J; Wu X; Ding SJ
    Nanoscale Res Lett; 2019 Dec; 14(1):363. PubMed ID: 31792629
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Tunable charge-trap memory based on few-layer MoS2.
    Zhang E; Wang W; Zhang C; Jin Y; Zhu G; Sun Q; Zhang DW; Zhou P; Xiu F
    ACS Nano; 2015 Jan; 9(1):612-9. PubMed ID: 25496773
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers.
    Yan C; Wen J; Lin P; Sun Z
    Small; 2019 Jan; 15(1):e1804156. PubMed ID: 30480357
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Charge-trapping characteristics of Al2O3/Cu/Al2O3 nanolaminate structures prepared through atomic layer deposition.
    Lee BK; Kim SH; Park BK; Lee SS; Hwang JH; Chung TM; Lee YK; Kim CG; An KS
    J Nanosci Nanotechnol; 2011 Jul; 11(7):5887-91. PubMed ID: 22121626
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications.
    Ding SJ; Chen HB; Cui XM; Chen S; Sun QQ; Zhou P; Lu HL; Zhang DW; Shen C
    Nanoscale Res Lett; 2013 Feb; 8(1):80. PubMed ID: 23413837
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO
    Spassov D; Paskaleva A; Guziewicz E; Wozniak W; Stanchev T; Ivanov T; Wojewoda-Budka J; Janusz-Skuza M
    Materials (Basel); 2022 Sep; 15(18):. PubMed ID: 36143596
    [TBL] [Abstract][Full Text] [Related]  

  • 15. In
    Hwang ES; Kim JS; Jeon SM; Lee SJ; Jang Y; Cho DY; Hwang CS
    Nanotechnology; 2018 Apr; 29(15):155203. PubMed ID: 29420311
    [TBL] [Abstract][Full Text] [Related]  

  • 16. ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.
    Sun CE; Chen CY; Chu KL; Shen YS; Lin CC; Wu YH
    ACS Appl Mater Interfaces; 2015 Apr; 7(12):6383-90. PubMed ID: 25781005
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer.
    Yang HY; Yun DY; Kim YN; Hong JM; Kim TW
    J Nanosci Nanotechnol; 2016 Feb; 16(2):1685-8. PubMed ID: 27433647
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO
    Spassov D; Paskaleva A
    Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686963
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe
    Liu C; Yan X; Wang J; Ding S; Zhou P; Zhang DW
    Small; 2017 May; 13(17):. PubMed ID: 28218820
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Dual phase TiO(x)N(y)/TiN charge trapping layer for low-voltage and high-speed flash memory application.
    Zhang G; Yoo WJ
    J Nanosci Nanotechnol; 2009 Dec; 9(12):7446-50. PubMed ID: 19908806
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.