184 related articles for article (PubMed ID: 28762338)
1. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.
Sul O; Kim K; Jung Y; Choi E; Lee SB
Nanotechnology; 2017 Sep; 28(37):37LT01. PubMed ID: 28762338
[TBL] [Abstract][Full Text] [Related]
2. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.
Kim W; Riikonen J; Li C; Chen Y; Lipsanen H
Nanotechnology; 2013 Oct; 24(39):395202. PubMed ID: 24013367
[TBL] [Abstract][Full Text] [Related]
3. Electrically configurable graphene field-effect transistors with a graded-potential gate.
Wang X; Jiang X; Wang T; Shi J; Liu M; Zeng Q; Cheng Z; Qiu X
Nano Lett; 2015 May; 15(5):3212-6. PubMed ID: 25897889
[TBL] [Abstract][Full Text] [Related]
4. Modulation of the Dirac point voltage of graphene by ion-gel dielectrics and its application to soft electronic devices.
Kim UJ; Kim TG; Shim Y; Park Y; Lee CW; Kim TH; Lee HS; Chung DY; Kihm J; Roh YG; Lee J; Son H; Kim S; Hur J; Hwang SW
ACS Nano; 2015 Jan; 9(1):602-11. PubMed ID: 25560458
[TBL] [Abstract][Full Text] [Related]
5. GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors.
Jha J; Ganguly S; Saha D
Nanotechnology; 2021 May; 32(31):. PubMed ID: 33902018
[TBL] [Abstract][Full Text] [Related]
6. A graphene based frequency quadrupler.
Cheng C; Huang B; Mao X; Zhang Z; Zhang Z; Geng Z; Xue P; Chen H
Sci Rep; 2017 Apr; 7():46605. PubMed ID: 28418013
[TBL] [Abstract][Full Text] [Related]
7. Gate-Tunable Dirac Point of Molecular Doped Graphene.
Solís-Fernández P; Okada S; Sato T; Tsuji M; Ago H
ACS Nano; 2016 Feb; 10(2):2930-9. PubMed ID: 26812353
[TBL] [Abstract][Full Text] [Related]
8. Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors.
Yu WJ; Kim UJ; Kang BR; Lee IH; Lee EH; Lee YH
Nano Lett; 2009 Apr; 9(4):1401-5. PubMed ID: 19281215
[TBL] [Abstract][Full Text] [Related]
9. Ambipolar to unipolar conversion in graphene field-effect transistors.
Li H; Zhang Q; Liu C; Xu S; Gao P
ACS Nano; 2011 Apr; 5(4):3198-203. PubMed ID: 21413732
[TBL] [Abstract][Full Text] [Related]
10. Dirac-cone induced gating enhancement in single-molecule field-effect transistors.
Sun H; Liu X; Su Y; Deng B; Peng H; Decurtins S; Sanvito S; Liu SX; Hou S; Liao J
Nanoscale; 2019 Jul; 11(27):13117-13125. PubMed ID: 31268079
[TBL] [Abstract][Full Text] [Related]
11. Graphene and Carbon Nanotube Heterojunction Transistors with Individual Gate Control.
Shiomi M; Mochizuki Y; Imakita Y; Arie T; Akita S; Takei K
ACS Nano; 2019 Apr; 13(4):4771-4777. PubMed ID: 30933474
[TBL] [Abstract][Full Text] [Related]
12. Multi-Valued Logic Circuits Based on Organic Anti-ambipolar Transistors.
Kobashi K; Hayakawa R; Chikyow T; Wakayama Y
Nano Lett; 2018 Jul; 18(7):4355-4359. PubMed ID: 29961329
[TBL] [Abstract][Full Text] [Related]
13. Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping.
Jalilian R; Jauregui LA; Lopez G; Tian J; Roecker C; Yazdanpanah MM; Cohn RW; Jovanovic I; Chen YP
Nanotechnology; 2011 Jul; 22(29):295705. PubMed ID: 21677372
[TBL] [Abstract][Full Text] [Related]
14. Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer.
Khim D; Shin EY; Xu Y; Park WT; Jin SH; Noh YY
ACS Appl Mater Interfaces; 2016 Jul; 8(27):17416-20. PubMed ID: 27323003
[TBL] [Abstract][Full Text] [Related]
15. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.
Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM
ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892
[TBL] [Abstract][Full Text] [Related]
16. Triple-mode single-transistor graphene amplifier and its applications.
Yang X; Liu G; Balandin AA; Mohanram K
ACS Nano; 2010 Oct; 4(10):5532-8. PubMed ID: 20939515
[TBL] [Abstract][Full Text] [Related]
17. Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption.
Kim TW; Ra HS; Ahn J; Jang J; Taniguchi T; Watanabe K; Shim JW; Lee YT; Hwang DK
ACS Appl Mater Interfaces; 2021 Feb; 13(6):7470-7475. PubMed ID: 33528986
[TBL] [Abstract][Full Text] [Related]
18. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.
Li D; Chen M; Zong Q; Zhang Z
Nano Lett; 2017 Oct; 17(10):6353-6359. PubMed ID: 28956929
[TBL] [Abstract][Full Text] [Related]
19. N-doped graphene field-effect transistors with enhanced electron mobility and air-stability.
Xu W; Lim TS; Seo HK; Min SY; Cho H; Park MH; Kim YH; Lee TW
Small; 2014 May; 10(10):1999-2005. PubMed ID: 24616289
[TBL] [Abstract][Full Text] [Related]
20. Gate-controlled nonlinear conductivity of Dirac fermion in graphene field-effect transistors measured by terahertz time-domain spectroscopy.
Maeng I; Lim S; Chae SJ; Lee YH; Choi H; Son JH
Nano Lett; 2012 Feb; 12(2):551-5. PubMed ID: 22214292
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
