These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

262 related articles for article (PubMed ID: 28772476)

  • 1. Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes.
    Chen SW; Li H; Chang CJ; Lu TC
    Materials (Basel); 2017 Jan; 10(2):. PubMed ID: 28772476
    [TBL] [Abstract][Full Text] [Related]  

  • 2. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.
    Zhou S; Liu X; Yan H; Gao Y; Xu H; Zhao J; Quan Z; Gui C; Liu S
    Sci Rep; 2018 Jul; 8(1):11053. PubMed ID: 30038360
    [TBL] [Abstract][Full Text] [Related]  

  • 4. An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.
    Liu M; Zhao J; Zhou S; Gao Y; Hu J; Liu X; Ding X
    Nanomaterials (Basel); 2018 Jun; 8(7):. PubMed ID: 29933543
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.
    Ra YH; Navamathavan R; Park JH; Lee CR
    Nano Lett; 2013 Aug; 13(8):3506-16. PubMed ID: 23701263
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
    Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
    Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis.
    Kim M; Choi S; Lee JH; Park C; Chung TH; Baek JH; Cho YH
    Sci Rep; 2017 Feb; 7():42221. PubMed ID: 28198804
    [TBL] [Abstract][Full Text] [Related]  

  • 8. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
    Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
    Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In
    Wang HC; Chen MC; Lin YS; Lu MY; Lin KI; Cheng YC
    Nanoscale Res Lett; 2017 Nov; 12(1):591. PubMed ID: 29124372
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes.
    Park AH; Chandramohan S; Seo TH; Lee GH; Min KH; Hong CH; Kim MJ; Suh EK
    Nanotechnology; 2016 Jul; 27(27):275602. PubMed ID: 27232210
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells.
    Kim J; Cho YH; Ko DS; Li XS; Won JY; Lee E; Park SH; Kim JY; Kim S
    Opt Express; 2014 May; 22 Suppl 3():A857-66. PubMed ID: 24922392
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
    Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
    Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
    Liu W; Zhao DG; Jiang DS; Chen P; Liu ZS; Zhu JJ; Shi M; Zhao DM; Li X; Liu JP; Zhang SM; Wang H; Yang H; Zhang YT; Du GT
    Opt Express; 2015 Jun; 23(12):15935-43. PubMed ID: 26193570
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
    Tsai CL; Wu WC
    Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness.
    Jia Z; Hao X; Lu T; Dong H; Jia Z; Ma S; Liang J; Jia W; Xu B
    RSC Adv; 2020 Nov; 10(68):41443-41452. PubMed ID: 35516542
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template.
    Johar MA; Kim T; Song HG; Waseem A; Kang JH; Hassan MA; Bagal IV; Cho YH; Ryu SW
    Nanoscale Adv; 2020 Apr; 2(4):1654-1665. PubMed ID: 36132313
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.
    Soh CB; Liu W; Yong AM; Chua SJ; Chow SY; Tripathy S; Tan RJ
    Nanoscale Res Lett; 2010 Aug; 5(11):1788-1794. PubMed ID: 21124627
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
    Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
    Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes.
    Dong P; Yan J; Zhang Y; Wang J; Geng C; Zheng H; Wei X; Yan Q; Li J
    Opt Express; 2014 Mar; 22(5):A320-7. PubMed ID: 24800288
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.