199 related articles for article (PubMed ID: 28773333)
1. Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation.
Hussain S; Pozzato A; Tormen M; Zannier V; Biasiol G
Materials (Basel); 2016 Mar; 9(3):. PubMed ID: 28773333
[TBL] [Abstract][Full Text] [Related]
2. The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.
Tommila J; Strelow C; Schramm A; Hakkarainen TV; Dumitrescu M; Kipp T; Guina M
Nanoscale Res Lett; 2012 Jun; 7(1):313. PubMed ID: 22713215
[TBL] [Abstract][Full Text] [Related]
3. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.
He J; Yadavalli K; Zhao Z; Li N; Hao Z; Wang KL; Jacob AP
Nanotechnology; 2008 Nov; 19(45):455607. PubMed ID: 21832784
[TBL] [Abstract][Full Text] [Related]
4. Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.
Tommila J; Schramm A; Hakkarainen TV; Dumitrescu M; Guina M
Nanotechnology; 2013 Jun; 24(23):235204. PubMed ID: 23676532
[TBL] [Abstract][Full Text] [Related]
5. Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100).
Hakkarainen TV; Tommila J; Schramm A; Tukiainen A; Ahorinta R; Dumitrescu M; Guina M
Nanotechnology; 2011 Jul; 22(29):295604. PubMed ID: 21680961
[TBL] [Abstract][Full Text] [Related]
6. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).
Hakkarainen TV; Polojärvi V; Schramm A; Tommila J; Guina M
Nanotechnology; 2012 Mar; 23(11):115702. PubMed ID: 22369789
[TBL] [Abstract][Full Text] [Related]
7. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.
Skiba-Szymanska J; Jamil A; Farrer I; Ward MB; Nicoll CA; Ellis DJ; Griffiths JP; Anderson D; Jones GA; Ritchie DA; Shields AJ
Nanotechnology; 2011 Feb; 22(6):065302. PubMed ID: 21212488
[TBL] [Abstract][Full Text] [Related]
8. Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.
Schramm A; Tommila J; Strelow C; Hakkarainen TV; Tukiainen A; Dumitrescu M; Mews A; Kipp T; Guina M
Nanotechnology; 2012 May; 23(17):175701. PubMed ID: 22481170
[TBL] [Abstract][Full Text] [Related]
9. Filling of hole arrays with InAs quantum dots.
Lee JY; Noordhoek MJ; Smereka P; McKay H; Millunchick JM
Nanotechnology; 2009 Jul; 20(28):285305. PubMed ID: 19546494
[TBL] [Abstract][Full Text] [Related]
10. Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition.
Pashchenko AS; Lunin LS; Danilina EM; Chebotarev SN
Beilstein J Nanotechnol; 2018; 9():2794-2801. PubMed ID: 30498652
[TBL] [Abstract][Full Text] [Related]
11. Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.
Lin SY; Tseng CC; Chung TH; Liao WH; Chen SH; Chyi JI
Nanotechnology; 2010 Jul; 21(29):295304. PubMed ID: 20601753
[TBL] [Abstract][Full Text] [Related]
12. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography.
Martín-Sánchez J; Alonso-González P; Herranz J; González Y; González L
Nanotechnology; 2009 Mar; 20(12):125302. PubMed ID: 19420463
[TBL] [Abstract][Full Text] [Related]
13. Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.
Wen L; Gao F; Zhang S; Li G
Small; 2016 Aug; 12(31):4277-85. PubMed ID: 27348495
[TBL] [Abstract][Full Text] [Related]
14. Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
Yakes MK; Yang L; Bracker AS; Sweeney TM; Brereton PG; Kim M; Kim CS; Vora PM; Park D; Carter SG; Gammon D
Nano Lett; 2013 Oct; 13(10):4870-5. PubMed ID: 23987910
[TBL] [Abstract][Full Text] [Related]
15. Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.
Zieliński M
J Phys Condens Matter; 2013 Nov; 25(46):465301. PubMed ID: 24129261
[TBL] [Abstract][Full Text] [Related]
16. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
Su XB; Ding Y; Ma B; Zhang KL; Chen ZS; Li JL; Cui XR; Xu YQ; Ni HQ; Niu ZC
Nanoscale Res Lett; 2018 Feb; 13(1):59. PubMed ID: 29468483
[TBL] [Abstract][Full Text] [Related]
17. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
Fu Y; Wang SM; Ferdos F; Sadeghi M; Larsson A
J Nanosci Nanotechnol; 2002; 2(3-4):421-6. PubMed ID: 12908273
[TBL] [Abstract][Full Text] [Related]
18. Site-controlled growth of InP/GaInP quantum dots on GaAs substrates.
Baumann V; Stumpf F; Steinl T; Forchel A; Schneider C; Höfling S; Kamp M
Nanotechnology; 2012 Sep; 23(37):375301. PubMed ID: 22922443
[TBL] [Abstract][Full Text] [Related]
19. Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications.
Wang YR; Han IS; Jin CY; Hopkinson M
ACS Appl Nano Mater; 2020 May; 3(5):4739-4746. PubMed ID: 32582881
[TBL] [Abstract][Full Text] [Related]
20. Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots.
Herranz J; Wewior L; Alén B; Fuster D; González L; González Y
Nanotechnology; 2015 May; 26(19):195301. PubMed ID: 25895541
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
