These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

151 related articles for article (PubMed ID: 28773923)

  • 1. Room Temperature Electroluminescence from Tensile-Strained Si
    Lin G; Chen N; Zhang L; Huang Z; Huang W; Wang J; Xu J; Chen S; Li C
    Materials (Basel); 2016 Sep; 9(10):. PubMed ID: 28773923
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
    Chen Y; Li C; Lai H; Chen S
    Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates.
    Manna S; Aluguri R; Das S; Singha R; Ray SK
    Opt Express; 2013 Nov; 21(23):28219-31. PubMed ID: 24514333
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.
    Sun X; Liu J; Kimerling LC; Michel J
    Opt Lett; 2009 Apr; 34(8):1198-200. PubMed ID: 19370116
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.
    Chang GE; Chen SW; Cheng HH
    Opt Express; 2016 Aug; 24(16):17562-71. PubMed ID: 27505727
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Design and analysis of electro-absorption modulators with uniaxially stressed Ge/SiGe multiple quantum wells.
    Gao J; Sun J; Jiang J; Zhou H; Zhou Y
    Opt Express; 2017 May; 25(10):10874-10884. PubMed ID: 28788775
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.
    Pizzi G; Virgilio M; Grosso G
    Nanotechnology; 2010 Feb; 21(5):055202. PubMed ID: 20023310
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.
    Rouifed MS; Chaisakul P; Marris-Morini D; Frigerio J; Isella G; Chrastina D; Edmond S; Le Roux X; Coudevylle JR; Vivien L
    Opt Lett; 2012 Oct; 37(19):3960-2. PubMed ID: 23027245
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.
    Jiang J; Sun J; Gao J; Zhang R
    Opt Express; 2017 Oct; 25(22):26714-26727. PubMed ID: 29092155
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures.
    Chaisakul P; Marris-Morini D; Isella G; Chrastina D; Le Roux X; Gatti E; Edmond S; Osmond J; Cassan E; Vivien L
    Opt Lett; 2010 Sep; 35(17):2913-5. PubMed ID: 20808367
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires.
    Zhu Z; Song Y; Chen Q; Zhang Z; Zhang L; Li Y; Wang S
    Nanoscale Res Lett; 2017 Dec; 12(1):472. PubMed ID: 28759987
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
    Liu J; Sun X; Pan D; Wang X; Kimerling LC; Koch TL; Michel J
    Opt Express; 2007 Sep; 15(18):11272-7. PubMed ID: 19547484
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si
    Singh S; Katiyar AK; Sarkar A; Shihabudeen PK; Chaudhuri AR; Goswami DK; Ray SK
    Nanotechnology; 2020 Mar; 31(11):115206. PubMed ID: 31756729
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon.
    Lever L; Hu Y; Myronov M; Liu X; Owens N; Gardes FY; Marko IP; Sweeney SJ; Ikonić Z; Leadley DR; Reed GT; Kelsall RW
    Opt Lett; 2011 Nov; 36(21):4158-60. PubMed ID: 22048350
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.
    Schwartz B; Oehme M; Kostecki K; Widmann D; Gollhofer M; Koerner R; Bechler S; Fischer IA; Wendav T; Kasper E; Schulze J; Kittler M
    Opt Lett; 2015 Jul; 40(13):3209-12. PubMed ID: 26125404
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots.
    Makihara K; Yamamoto Y; Imai Y; Taoka N; Schubert MA; Tillack B; Miyazaki S
    Nanomaterials (Basel); 2023 Apr; 13(9):. PubMed ID: 37177020
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Direct bandgap quantum wells in hexagonal Silicon Germanium.
    Peeters WHJ; van Lange VT; Belabbes A; van Hemert MC; Jansen MM; Farina R; van Tilburg MAJ; Verheijen MA; Botti S; Bechstedt F; Haverkort JEM; Bakkers EPAM
    Nat Commun; 2024 Jun; 15(1):5252. PubMed ID: 38898007
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides.
    Chaisakul P; Marris-Morini D; Isella G; Chrastina D; Le Roux X; Edmond S; Coudevylle JR; Cassan E; Vivien L
    Opt Lett; 2011 May; 36(10):1794-6. PubMed ID: 21593893
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.
    Lee C; Yoo YS; Ki B; Jang MH; Lim SH; Song HG; Cho JH; Oh J; Cho YH
    Sci Rep; 2019 Aug; 9(1):11709. PubMed ID: 31406149
    [TBL] [Abstract][Full Text] [Related]  

  • 20. "W-shaped" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate.
    Li J; Li C; Xu M; Ji Z; Shi K; Xu X; Li H; Xu X
    Opt Express; 2017 Oct; 25(20):A871-A879. PubMed ID: 29041298
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.